JP2004535065A5 - - Google Patents

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Publication number
JP2004535065A5
JP2004535065A5 JP2003511305A JP2003511305A JP2004535065A5 JP 2004535065 A5 JP2004535065 A5 JP 2004535065A5 JP 2003511305 A JP2003511305 A JP 2003511305A JP 2003511305 A JP2003511305 A JP 2003511305A JP 2004535065 A5 JP2004535065 A5 JP 2004535065A5
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JP
Japan
Prior art keywords
atomic
value
dielectric layer
integrated circuit
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003511305A
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English (en)
Japanese (ja)
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JP2004535065A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/020704 external-priority patent/WO2003005438A2/en
Publication of JP2004535065A publication Critical patent/JP2004535065A/ja
Publication of JP2004535065A5 publication Critical patent/JP2004535065A5/ja
Pending legal-status Critical Current

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JP2003511305A 2001-07-02 2002-06-25 多孔質材料上のＳｉＣ：Ｈ蒸着によって改良された金属バリア挙動 Pending JP2004535065A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30246901P 2001-07-02 2001-07-02
PCT/US2002/020704 WO2003005438A2 (en) 2001-07-02 2002-06-25 Improved metal barrier behavior by sic:h deposition on porous materials

Publications (2)

Publication Number Publication Date
JP2004535065A JP2004535065A (ja) 2004-11-18
JP2004535065A5 true JP2004535065A5 (enExample) 2006-01-05

Family

ID=23167846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003511305A Pending JP2004535065A (ja) 2001-07-02 2002-06-25 多孔質材料上のＳｉＣ：Ｈ蒸着によって改良された金属バリア挙動

Country Status (5)

Country Link
US (1) US6541842B2 (enExample)
JP (1) JP2004535065A (enExample)
KR (1) KR100847926B1 (enExample)
CN (1) CN1596466A (enExample)
WO (1) WO2003005438A2 (enExample)

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