JP6499001B2 - 多孔質膜をエッチングする方法 - Google Patents
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- 229940044613 1-propanol Drugs 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
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- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Description
式(1)のアントワン式によって規定される飽和蒸気圧pと絶対温度Tの関係は、図10に示すグラフでは直線関係である(なお、定数Cの値がゼロでない場合には、図10に示す直線が横方向にシフトするだけであって、飽和蒸気圧pと絶対温度Tとの関係に直線関係が存在することには変わりはない)。したがって、図10に示す各フルオロカーボンガスに関する複数の実測値の関係は、アントワン式によって規定される直線関係に一致している。よって、実測値から外挿した直線を用いることにより、実測値がない温度領域の飽和蒸気圧を定量的に予測することが可能である。
・工程ST1の第1のガス:C6F6ガス(50sccm)
・工程ST1の処理容器12内の圧力:0.1Torr(13.33Pa)
・工程ST1のステージPDの温度:−50℃
・工程ST1の処理時間:30秒
・工程ST2の第2のガス:NF3/SiF4/Arガス(100/120/30sccm)
・工程ST2の処理容器12内の圧力:0.1Torr(13.33Pa)
・工程ST2のステージPDの温度:−50℃
・工程ST2の処理時間:10秒
・工程ST3の第2のガス:NF3/SiF4/Arガス(120/100/30sccm)
・工程ST3の処理容器12内の圧力:0.1Torr(13.33Pa)
・工程ST3のステージPDの温度:−50℃
・工程ST3の高周波電力:60MHz、100W
・工程ST3の高周波バイアス電力:0.4MHz、50W
・工程ST3の処理時間:3秒
・シーケンスSQの実行回数:15回
・工程ST4のステージの温度:200℃
・工程ST4の処理時間:60秒
・工程ST1の第1のガス:2−プロパノール(50sccm)
・工程ST1の処理容器12内の圧力:0.14Torr(18.67Pa)
・工程ST1のステージPDの温度:−20℃
・工程ST1の処理時間:30秒
・工程ST2の第2のガス:NF3/SiF4/Arガス(120/100/30sccm)
・工程ST2の処理容器12内の圧力:0.1Torr(13.33Pa)
・工程ST2のステージPDの温度:−20℃
・工程ST2の処理時間:5秒
・工程ST3の第2のガス:NF3/SiF4/Arガス(120/100/30sccm)
・工程ST3の処理容器12内の圧力:0.1Torr(13.33Pa)
・工程ST3のステージPDの温度:−20℃
・工程ST3の高周波電力:60MHz、100W
・工程ST3の高周波バイアス電力:0.4MHz、50W
・工程ST3の処理時間:3秒
・シーケンスSQの実行回数:15回
・工程ST4のステージの温度:200℃
・工程ST4の処理時間:60秒
Claims (11)
- 多孔質膜をエッチングする方法であって、
前記多孔質膜を有する被処理体が収容されたプラズマ処理装置の処理容器内に第1のガスを供給する工程と、
前記処理容器内において前記多孔質膜のエッチング用の第2のガスのプラズマを生成する工程と、
を含み、
前記第1のガスは、前記処理容器内でその上に前記被処理体が載置されているステージの温度において133.3パスカル以下の飽和蒸気圧を有する処理ガスからなるか、又は、該処理ガスを含み、
前記第1のガスを供給する前記工程では、プラズマは生成されず、前記処理容器内に供給される前記処理ガスの分圧は、前記飽和蒸気圧の20%以上であり、
前記第1のガスを供給する前記工程及び前記第2のガスのプラズマを生成する前記工程を含むシーケンスが繰り返し実行される、
方法。 - 多孔質膜をエッチングする方法であって、
前記多孔質膜を有する被処理体が収容されたプラズマ処理装置の処理容器内に第1のガスを供給する工程と、
前記処理容器内において前記多孔質膜のエッチング用の第2のガスのプラズマを生成する工程と、
を含み、
前記第1のガスは、前記処理容器内でその上に前記被処理体が載置されているステージの温度において133.3パスカル以下の飽和蒸気圧を有する処理ガスからなるか、又は、該処理ガスを含み、
前記第1のガスを供給する前記工程では、プラズマは生成されず、前記処理容器内に供給される前記処理ガスの分圧は、前記飽和蒸気圧の20%以上であり、前記処理ガスが毛管凝縮によって前記多孔質膜の細孔内で液化して該細孔を液体で充填し、
前記第2のガスのプラズマを生成する前記工程では、前記細孔が前記液体で充填された状態で前記多孔質膜がエッチングされる、
方法。 - 前記第1のガスを供給する前記工程及び前記第2のガスのプラズマを生成する前記工程を含むシーケンスが繰り返し実行される、請求項2に記載の方法。
- 前記第1のガスを供給する前記工程と前記第2のガスのプラズマを生成する前記工程との間において、プラズマを生成せずに、前記処理容器内に前記第2のガスを供給する工程を更に含む、請求項1〜3の何れか一項に記載の方法。
- 前記第1のガスを供給する前記工程における前記処理容器内の空間の圧力は、133.3パスカル以下である、請求項1〜4の何れか一項に記載の方法。
- 前記第2のガスのプラズマを生成する前記工程における前記処理容器内の空間の圧力は、40パスカル以下である、請求項1〜5の何れか一項に記載の方法。
- 前記処理ガスは、フルオロカーボンガスを含む、請求項1〜6の何れか一項に記載の方法。
- 前記フルオロカーボンガスは、C7F8ガス及びC6F6ガスのうち少なくとも一方を含み、
前記第1のガスを供給する前記工程において前記処理容器内に供給される前記処理ガスの分圧は、前記飽和蒸気圧の100%以下である、請求項7に記載の方法。 - 前記処理ガスは、炭化水素ガス、又は酸素含有炭化水素ガスである、請求項1〜6の何れか一項に記載の方法。
- 前記処理ガスに含まれる分子中の炭素原子の原子数に対して該分子中の酸素原子の原子数が1/2以下である、請求項9に記載の方法。
- 前記処理ガスに基づく前記多孔質膜中の液体を気化させて気体を生成し、該気体を排気する工程を更に含む、請求項1〜10の何れか一項に記載の方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2015085878A JP6499001B2 (ja) | 2015-04-20 | 2015-04-20 | 多孔質膜をエッチングする方法 |
TW105111422A TWI686862B (zh) | 2015-04-20 | 2016-04-13 | 多孔質膜之蝕刻方法 |
KR1020160046073A KR102424480B1 (ko) | 2015-04-20 | 2016-04-15 | 다공질막을 에칭하는 방법 |
US15/131,459 US9859102B2 (en) | 2015-04-20 | 2016-04-18 | Method of etching porous film |
EP16165943.8A EP3086358A1 (en) | 2015-04-20 | 2016-04-19 | Method of etching porous film |
CN201610248184.2A CN106067410B (zh) | 2015-04-20 | 2016-04-20 | 对多孔质膜进行蚀刻的方法 |
CN201711202249.0A CN107749389B (zh) | 2015-04-20 | 2016-04-20 | 对多孔质膜进行蚀刻的方法 |
US15/826,059 US10236162B2 (en) | 2015-04-20 | 2017-11-29 | Method of etching porous film |
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JP6875152B2 (ja) * | 2017-03-03 | 2021-05-19 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 多孔質膜封孔方法および多孔質膜封孔用材料 |
JP6441994B2 (ja) * | 2017-05-16 | 2018-12-19 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
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US9859102B2 (en) | 2018-01-02 |
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CN106067410B (zh) | 2018-01-02 |
TWI686862B (zh) | 2020-03-01 |
CN107749389B (zh) | 2019-09-24 |
US20160307732A1 (en) | 2016-10-20 |
CN106067410A (zh) | 2016-11-02 |
TW201705272A (zh) | 2017-02-01 |
EP3086358A1 (en) | 2016-10-26 |
US20180082823A1 (en) | 2018-03-22 |
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CN107749389A (zh) | 2018-03-02 |
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