JP5823160B2 - 堆積物除去方法 - Google Patents
堆積物除去方法 Download PDFInfo
- Publication number
- JP5823160B2 JP5823160B2 JP2011106464A JP2011106464A JP5823160B2 JP 5823160 B2 JP5823160 B2 JP 5823160B2 JP 2011106464 A JP2011106464 A JP 2011106464A JP 2011106464 A JP2011106464 A JP 2011106464A JP 5823160 B2 JP5823160 B2 JP 5823160B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- deposit
- period
- partial pressure
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Description
(ステップ1)
圧力:6.65Pa(50mTorr)
高周波電力(周波数の高い高周波)/(周波数の低い高周波):400/1500W
エッチングガス:HBr/NF3/O2=400/75/5sccm
ステージ温度: 110℃
時間:5秒
(ステップ2)
圧力:6.65Pa(50mTorr)
高周波電力(周波数の高い高周波)/(周波数の低い高周波):400/1400W
エッチングガス:HBr/NF3/O2=350/32/19sccm
ステージ温度: 110℃
時間:20秒
圧力:133Pa(1Torr)
高周波電力:1000W
エッチングガス:O2=1980sccm
ステージ温度: 250℃
時間:120秒
圧力:(931Pa(7Torr)10秒⇔173Pa(1.3Torr)10秒)×6サイクル
HF/CH3OH=2800/44sccm
ステージ温度:10℃
Claims (4)
- シャロー・トレンチ・アイソレーションプロセス中に基板上に形成されたパターンの表面に堆積した堆積物を除去する堆積物除去方法であって、
前記基板を200℃〜300℃に加熱しながら酸素プラズマに晒す酸素プラズマ処理工程と、
前記酸素プラズマ処理工程の後、前記基板を、−10℃〜30℃に温調しつつ、処理チャンバー内でフッ化水素ガスとアルコールガスの混合ガスの雰囲気に晒し、かつ、前記アルコールガスの分圧を第1の分圧とする第1の期間と、処理チャンバー内を排気し前記アルコールガスの分圧を第1の分圧より低い第2の分圧とする第2の期間とを、複数サイクル繰り返すサイクル処理工程と、
を具備し、
前記第1の分圧が、前記混合ガスの作用によって前記堆積物を除去可能な分圧であり、
前記第1の期間及び前記第2の期間が、5秒乃至20秒の期間である
ことを特徴とする堆積物除去方法。 - 請求項1記載の堆積物除去方法であって、
前記堆積物が、シリコン酸化物を含む
ことを特徴とする堆積物除去方法。 - 請求項は1又は2記載の堆積物除去方法であって、
前記パターンが、構造物として二酸化ケイ素を含む
ことを特徴とする堆積物除去方法。 - 請求項1〜3いずれか1項記載の堆積物除去方法であって、
前記アルコールガスが、メタノールガスである
ことを特徴とする堆積物除去方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011106464A JP5823160B2 (ja) | 2011-05-11 | 2011-05-11 | 堆積物除去方法 |
KR1020137030325A KR101895095B1 (ko) | 2011-05-11 | 2012-05-10 | 퇴적물 제거 방법 |
US14/116,952 US9126229B2 (en) | 2011-05-11 | 2012-05-10 | Deposit removal method |
TW101116604A TWI555086B (zh) | 2011-05-11 | 2012-05-10 | Deposit removal method |
PCT/JP2012/003070 WO2012153534A1 (ja) | 2011-05-11 | 2012-05-10 | 堆積物除去方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011106464A JP5823160B2 (ja) | 2011-05-11 | 2011-05-11 | 堆積物除去方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012238711A JP2012238711A (ja) | 2012-12-06 |
JP5823160B2 true JP5823160B2 (ja) | 2015-11-25 |
Family
ID=47139020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011106464A Expired - Fee Related JP5823160B2 (ja) | 2011-05-11 | 2011-05-11 | 堆積物除去方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9126229B2 (ja) |
JP (1) | JP5823160B2 (ja) |
KR (1) | KR101895095B1 (ja) |
TW (1) | TWI555086B (ja) |
WO (1) | WO2012153534A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5859262B2 (ja) * | 2011-09-29 | 2016-02-10 | 東京エレクトロン株式会社 | 堆積物除去方法 |
JP6017170B2 (ja) * | 2012-04-18 | 2016-10-26 | 東京エレクトロン株式会社 | 堆積物除去方法及びガス処理装置 |
KR102107256B1 (ko) | 2012-05-23 | 2020-05-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP6499001B2 (ja) | 2015-04-20 | 2019-04-10 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
US9865471B2 (en) * | 2015-04-30 | 2018-01-09 | Tokyo Electron Limited | Etching method and etching apparatus |
JP6516603B2 (ja) * | 2015-04-30 | 2019-05-22 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US10224212B2 (en) * | 2017-01-27 | 2019-03-05 | Lam Research Corporation | Isotropic etching of film with atomic layer control |
CN112335016A (zh) * | 2018-06-13 | 2021-02-05 | 朗姆研究公司 | 高深宽比结构的有效率的清洁和蚀刻 |
TW202236406A (zh) * | 2021-01-26 | 2022-09-16 | 日商東京威力科創股份有限公司 | 基板處理方法、零件處理方法及基板處理裝置 |
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JPH069195B2 (ja) * | 1989-05-06 | 1994-02-02 | 大日本スクリーン製造株式会社 | 基板の表面処理方法 |
JPH05304122A (ja) | 1992-04-28 | 1993-11-16 | Matsushita Electric Ind Co Ltd | ドライエッチング方法およびドライエッチング装置 |
JPH0684852A (ja) | 1992-09-02 | 1994-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3328416B2 (ja) | 1994-03-18 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
US5439553A (en) * | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
JPH07335602A (ja) | 1994-06-06 | 1995-12-22 | Dainippon Screen Mfg Co Ltd | 基板の表面処理方法及び表面処理装置 |
TW418444B (en) | 1996-12-16 | 2001-01-11 | Shinetsu Handotai Kk | The surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film |
JP3334578B2 (ja) | 1996-12-16 | 2002-10-15 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
JP2000049227A (ja) | 1998-07-31 | 2000-02-18 | Toshiba Corp | 半導体装置の製造方法 |
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JP2000357680A (ja) * | 1999-06-15 | 2000-12-26 | Nec Kyushu Ltd | シリコン系プラズマエッチングに於ける酸素プラズマ照射によるアウトガス防止方法 |
JP2002353205A (ja) * | 2000-08-28 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置 |
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-
2011
- 2011-05-11 JP JP2011106464A patent/JP5823160B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-10 US US14/116,952 patent/US9126229B2/en not_active Expired - Fee Related
- 2012-05-10 KR KR1020137030325A patent/KR101895095B1/ko active IP Right Grant
- 2012-05-10 TW TW101116604A patent/TWI555086B/zh not_active IP Right Cessation
- 2012-05-10 WO PCT/JP2012/003070 patent/WO2012153534A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR101895095B1 (ko) | 2018-09-04 |
US9126229B2 (en) | 2015-09-08 |
TW201308428A (zh) | 2013-02-16 |
JP2012238711A (ja) | 2012-12-06 |
WO2012153534A1 (ja) | 2012-11-15 |
KR20140024386A (ko) | 2014-02-28 |
US20140083979A1 (en) | 2014-03-27 |
TWI555086B (zh) | 2016-10-21 |
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