JP2004517498A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004517498A5 JP2004517498A5 JP2002555483A JP2002555483A JP2004517498A5 JP 2004517498 A5 JP2004517498 A5 JP 2004517498A5 JP 2002555483 A JP2002555483 A JP 2002555483A JP 2002555483 A JP2002555483 A JP 2002555483A JP 2004517498 A5 JP2004517498 A5 JP 2004517498A5
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- wire
- pad
- layer
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims 18
- 229910000881 Cu alloy Inorganic materials 0.000 claims 14
- 238000000034 method Methods 0.000 claims 8
- 238000002161 passivation Methods 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 4
- 229910017767 Cu—Al Inorganic materials 0.000 claims 3
- 239000002019 doping agent Substances 0.000 claims 3
- 229910017539 Cu-Li Inorganic materials 0.000 claims 2
- 229910017818 Cu—Mg Inorganic materials 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,479 US6515373B2 (en) | 2000-12-28 | 2000-12-28 | Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys |
| PCT/US2001/043960 WO2002054491A2 (en) | 2000-12-28 | 2001-11-14 | Cu-pad/bonded/cu-wire with self-passivating cu-alloys |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004517498A JP2004517498A (ja) | 2004-06-10 |
| JP2004517498A5 true JP2004517498A5 (enExample) | 2005-04-28 |
| JP3737482B2 JP3737482B2 (ja) | 2006-01-18 |
Family
ID=25022157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002555483A Expired - Fee Related JP3737482B2 (ja) | 2000-12-28 | 2001-11-14 | 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6515373B2 (enExample) |
| EP (1) | EP1348235A2 (enExample) |
| JP (1) | JP3737482B2 (enExample) |
| KR (1) | KR100542120B1 (enExample) |
| CN (1) | CN1296997C (enExample) |
| WO (1) | WO2002054491A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980807B2 (ja) * | 2000-03-27 | 2007-09-26 | 株式会社東芝 | 半導体装置及び半導体モジュール |
| KR100717667B1 (ko) * | 2000-09-18 | 2007-05-11 | 신닛뽄세이테쯔 카부시키카이샤 | 반도체용 본딩 와이어 및 그 제조 방법 |
| US6970939B2 (en) * | 2000-10-26 | 2005-11-29 | Intel Corporation | Method and apparatus for large payload distribution in a network |
| US20030127716A1 (en) * | 2002-01-09 | 2003-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads |
| US6805786B2 (en) | 2002-09-24 | 2004-10-19 | Northrop Grumman Corporation | Precious alloyed metal solder plating process |
| US7015580B2 (en) * | 2003-11-25 | 2006-03-21 | International Business Machines Corporation | Roughened bonding pad and bonding wire surfaces for low pressure wire bonding |
| US6897147B1 (en) | 2004-01-15 | 2005-05-24 | Taiwan Semiconductor Manufacturing Company | Solution for copper hillock induced by thermal strain with buffer zone for strain relaxation |
| US7851358B2 (en) * | 2005-05-05 | 2010-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low temperature method for minimizing copper hillock defects |
| DE102005044510B4 (de) * | 2005-09-16 | 2011-03-17 | Infineon Technologies Ag | Halbleiterbauteil mit Vorderseitenmetallisierung sowie Verfahren zu dessen Herstellung und Leistungsdiode |
| EP1783829A1 (en) * | 2005-11-02 | 2007-05-09 | Abb Research Ltd. | Method for bonding electronic components |
| US7205673B1 (en) * | 2005-11-18 | 2007-04-17 | Lsi Logic Corporation | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing |
| US8344524B2 (en) * | 2006-03-07 | 2013-01-01 | Megica Corporation | Wire bonding method for preventing polymer cracking |
| TWI370515B (en) * | 2006-09-29 | 2012-08-11 | Megica Corp | Circuit component |
| US20090008796A1 (en) * | 2006-12-29 | 2009-01-08 | United Test And Assembly Center Ltd. | Copper on organic solderability preservative (osp) interconnect |
| US7911061B2 (en) * | 2007-06-25 | 2011-03-22 | Infineon Technologies Ag | Semiconductor device |
| US8030775B2 (en) | 2007-08-27 | 2011-10-04 | Megica Corporation | Wirebond over post passivation thick metal |
| US20100181675A1 (en) * | 2009-01-16 | 2010-07-22 | Infineon Technologies Ag | Semiconductor package with wedge bonded chip |
| US20100200981A1 (en) * | 2009-02-09 | 2010-08-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method of manufacturing the same |
| WO2010112983A1 (en) * | 2009-03-31 | 2010-10-07 | Stmicroelectronics (Grenoble 2) Sas | Wire-bonded semiconductor package with a coated wire |
| US8432024B2 (en) * | 2010-04-27 | 2013-04-30 | Infineon Technologies Ag | Integrated circuit including bond wire directly bonded to pad |
| JP5213146B1 (ja) * | 2012-10-03 | 2013-06-19 | 田中電子工業株式会社 | 半導体装置接続用銅ロジウム合金細線 |
| EP2808873A1 (de) * | 2013-05-28 | 2014-12-03 | Nexans | Elektrisch leitfähiger Draht und Verfahren zu seiner Herstellung |
| KR102100372B1 (ko) | 2013-08-28 | 2020-04-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6250864B2 (ja) * | 2015-03-10 | 2017-12-20 | 三菱電機株式会社 | パワー半導体装置 |
| CN113026009A (zh) * | 2021-03-29 | 2021-06-25 | 广东禾木科技有限公司 | 钝化液、提高金属材料键合性能的方法、键合丝、应用 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761386A (en) * | 1984-10-22 | 1988-08-02 | National Semiconductor Corporation | Method of fabricating conductive non-metallic self-passivating non-corrodable IC bonding pads |
| US4676827A (en) * | 1985-03-27 | 1987-06-30 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device and process for producing the same |
| US5134460A (en) * | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
| JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPH04164332A (ja) * | 1990-10-29 | 1992-06-10 | Matsushita Electron Corp | 半導体装置 |
| US5371654A (en) * | 1992-10-19 | 1994-12-06 | International Business Machines Corporation | Three dimensional high performance interconnection package |
| US5622608A (en) * | 1994-05-05 | 1997-04-22 | Research Foundation Of State University Of New York | Process of making oxidation resistant high conductivity copper layers |
| US5766379A (en) * | 1995-06-07 | 1998-06-16 | The Research Foundation Of State University Of New York | Passivated copper conductive layers for microelectronic applications and methods of manufacturing same |
| EP0751567B1 (en) * | 1995-06-27 | 2007-11-28 | International Business Machines Corporation | Copper alloys for chip interconnections and method of making |
| US6037257A (en) * | 1997-05-08 | 2000-03-14 | Applied Materials, Inc. | Sputter deposition and annealing of copper alloy metallization |
| US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
| US6249055B1 (en) * | 1998-02-03 | 2001-06-19 | Advanced Micro Devices, Inc. | Self-encapsulated copper metallization |
| US6153521A (en) * | 1998-06-04 | 2000-11-28 | Advanced Micro Devices, Inc. | Metallized interconnection structure and method of making the same |
| ATE316426T1 (de) * | 1998-06-30 | 2006-02-15 | Semitool Inc | Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen |
| US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
| US6281127B1 (en) * | 1999-04-15 | 2001-08-28 | Taiwan Semiconductor Manufacturing Company | Self-passivation procedure for a copper damascene structure |
| US6329722B1 (en) * | 1999-07-01 | 2001-12-11 | Texas Instruments Incorporated | Bonding pads for integrated circuits having copper interconnect metallization |
| US6339022B1 (en) * | 1999-12-30 | 2002-01-15 | International Business Machines Corporation | Method of annealing copper metallurgy |
-
2000
- 2000-12-28 US US09/751,479 patent/US6515373B2/en not_active Expired - Lifetime
-
2001
- 2001-11-14 CN CNB018216528A patent/CN1296997C/zh not_active Expired - Fee Related
- 2001-11-14 EP EP01987076A patent/EP1348235A2/en not_active Withdrawn
- 2001-11-14 KR KR1020037008825A patent/KR100542120B1/ko not_active Expired - Fee Related
- 2001-11-14 JP JP2002555483A patent/JP3737482B2/ja not_active Expired - Fee Related
- 2001-11-14 WO PCT/US2001/043960 patent/WO2002054491A2/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004517498A5 (enExample) | ||
| JP3737482B2 (ja) | 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ | |
| CN100386857C (zh) | 制备用于电连接的导电座的方法及形成的导电座 | |
| US6730982B2 (en) | FBEOL process for Cu metallizations free from Al-wirebond pads | |
| TWI557812B (zh) | 半導體裝置及其製造方法 | |
| US6762117B2 (en) | Method of fabricating metal redistribution layer having solderable pads and wire bondable pads | |
| CN103109362B (zh) | 具有穿透衬底的通孔的集成电路 | |
| US6593222B2 (en) | Method to improve the reliability of thermosonic gold to aluminum wire bonds | |
| US6706629B1 (en) | Barrier-free copper interconnect | |
| CN102915986B (zh) | 芯片封装结构 | |
| SG129215A1 (en) | Aluminum and copper bimetallic bond pad scheme forcopper damascene interconnects | |
| TW201023330A (en) | Integrated circuit | |
| CN101390202B (zh) | 用于铝铜键合焊盘的盖层 | |
| CN100438012C (zh) | 自行钝化铜激光熔丝 | |
| JP2013531393A (ja) | コアジャケットリボンワイヤ | |
| US7566964B2 (en) | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures | |
| CN102931158B (zh) | 芯片封装结构 | |
| TWI271808B (en) | Bonding structure and fabrication thereof | |
| TWI270174B (en) | Method of reducing process steps in metal line protective structure formation | |
| US20020068385A1 (en) | Method for forming anchored bond pads in semiconductor devices and devices formed | |
| JP2005026691A (ja) | ボールボンディングにおいて小径ワイヤにより構成されたボンドの強度を増加するシステム及び方法 | |
| JP2005522055A (ja) | ＡＬ−ワイヤボンドパッドを必要としないＣｕメタライゼーションのためのＢＥＯＬプロセス | |
| TWI264788B (en) | Chip structure and chip manufacturing process | |
| US20060163706A1 (en) | Bilayer aluminum last metal for interconnects and wirebond pads | |
| CN206040631U (zh) | 半导体装置 |