JP2004517498A - 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ - Google Patents

自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ Download PDF

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JP2004517498A
JP2004517498A JP2002555483A JP2002555483A JP2004517498A JP 2004517498 A JP2004517498 A JP 2004517498A JP 2002555483 A JP2002555483 A JP 2002555483A JP 2002555483 A JP2002555483 A JP 2002555483A JP 2004517498 A JP2004517498 A JP 2004517498A
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pad
alloy
wire
self
layer
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JP3737482B2 (ja
JP2004517498A5 (ja
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ヨアヒム バース，ハンス
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インフィネオン テクノロジーズ ノース アメリカ コーポレイション
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L2924/14—Integrated circuits

Abstract

本発明は、集積回路構造中のＣｕパッドとＣｕワイヤ部材とを接着したワイヤの改善に関するものである。上記ＣｕパッドＣｕワイヤ部材とは、自己不動態化、低抵抗、高接着力、および、酸化および腐食に対する抵抗力の改善を特徴としている。ＣｕパッドＣｕワイヤ部材は、メタライゼーション配線と、メタライゼーション配線とＣｕパッドを取り囲むＣｕ合金とを分かつ下地膜と、下地膜を取り囲む誘電体と、Ｃｕ合金ワイヤに接着したＣｕパッドとを含んでいる。Ｃｕワイヤ部材は、ａ）Ｃｕ合金と下地膜との間のドーパントリッチ境界面、ｂ）Ｃｕパッドの表面、ｃ）ＣｕパッドとＣｕ合金ワイヤとの間の接着面、および、ｄ）Ｃｕ合金ワイヤの表面に位置する、自己不動態化領域を特徴としている。

Description

（発明の背景）
１．発明の分野
本発明は、自己不動態化Ｃｕ合金を用いた、ＣｕパッドのＣｕワイヤとのワイヤ接着に関するものである。ドーパントリッチＣｕ合金から形成される自己不動態化層は、腐食および酸化からＣｕを保護するものである。
【０００１】
２．関連技術の説明
ワイヤ接着技術に関して、現時点での技術水準では、従来のＡｌウェッジまたはＡｕボールボンディングと組み合わせて、Ａｌパッドを使用することができる。しかし、メタライゼーションされたＣｕの上にＡｌパッドを備えるには、コストがかかり、付加的なプロセス工程が必要である。
【０００２】
さらに、従来どおり、ＣｕワイヤをＣｕパッド上に接着するのであれば、露出したＣｕ層は、腐食および酸化の影響を多大に受ける。
【０００３】
従来の、ワイヤ接着によって、従来のオーバーメッキされ、上塗りされた銅（Ｃｕ）パッド上にチップを直接取り付ける技術は、コストがかかる。なぜなら、銅回路を備えたキャリア上において、効果の高いワイヤ接着を行うためには、直接チップアタッチ（ＤＣＡ）ワイヤ接着された集積回路（ＩＣ）チップ、および、ワイヤボンドジャンパ回路を有する回路キャリア上において、コストのかかるメッキをする必要があるからである。ＩＣチップは、熱を加えた、接着剤または半田付けチップ取り付け材料によって、回路キャリアに取り付けられている。また、回路の上塗りまたは半田付けマスクによって、銅回路は覆われている。直接チップアタッチ（ＤＣＡ）ワイヤボンド操作においては、下地メッキ（ｕｎｄｅｒｐｌａｔｉｎｇｓ）と、貴金属または半貴金属のメッキ上塗り仕上げまたは表面被覆とを組み合わせを有する回路キャリア上の配線パッドに、シリコンチップがワイヤ接着されている。回路キャリアワイヤ接着へ適用するための、一般的な層構造の表面仕上げ金属（ｍｅｔａｌｌｕｒｇｉｅｓ）は、金（Ａｕ）・パラジウム（Ｐｄ）または銀（Ａｇ）の表面メッキ被覆層によって覆われた、ニッケル（Ｎｉ）下地メッキ被覆からなる。層構造の表面仕上げ処理は、下層の銅（Ｃｕ）回路メタライゼーション（ｍｅｔａｌｌｉｚａｔｉｏｎ）のオーバーメッキ表面への拡散を妨げ、続くワイヤ接着パッド表面の酸化を防止する。そうしなければ、ワイヤ接着の前にパッド表面が多量に酸化することによって、ワイヤ接着が効果的に行われなくなり、ワイヤ接着配線の信頼性が低下してしまう。銅パッド上のこれらのメッキ処理は、効果があり、信頼性の高いワイヤ接着配線を提供するために用いられてきたのである。
【０００４】
これらのメッキ処理にはコストがかかる。なぜなら、メッキ槽化学反応（ｐｌａｔｉｎｇ ｂａｔｈ ｃｈｅｍｉｓｔｒｉｅｓ）を行うために、貴金属および精確なプロセス制御を必要とするからである。さらに、電解メッキを用いた場合、メッキ処理の必要な全領域にバシンング構造（ｂｕｓｓｉｎｇ ｃｏｎｆｉｇｕｒａｔｉｏｎｓ）を提供する必要がある。このバシングは、より効果的なワイヤリング構造とすること妨げ、パネルと回路設計との両方において利用可能なキャリアスペースの最大限の使用をできなくしてしまう。また、電解メッキを用いると、回路の構成要素のコストが高くなってしまう。なぜなら、ポリイミド・ポリエステルのようなフレキシブルなキャリア材料と、ガラスエポキシ混合物またはセラミック・液晶重合体（ＬＣＰ）のような硬質キャリア材料とを含んだパネルキャリア材料上への、多層マイクロプロセッサ回路構造の実装が、非効率だからである。
【０００５】
アメリカ特許明細書第５，６３２，４３８号は、銅回路（ｃｉｒｃｕｉｔｉｚａｔｉｏｎ）上にアルミニウムのワイヤを接着するための、直接チップアタッチメントプロセスを開示している。このプロセスは、１つの集積回路チップをキャリアに移動し、キャリアおよび接着された集積回路チップに、クエン酸およびシュウ酸を基にした添加剤を含んだ水溶性洗浄液を塗布し、キャリアおよび接着された集積回路チップにリンス剤を塗布し、キャリアによって支えられた銅回路にワイヤ接着を行うプロセスである。
【０００６】
ディープサブミクロンの（ｄｅｅｐ−ｓｕｂｍｉｃｒｏｎ）集積回路パッケージのための接着力の改善方法が、アメリカ特許明細書第６，１１９，８１６号に開示されている。この方法は、以下のような方法である。最上電気伝導層を備えた半導体基板と、最上電気伝導層を覆う上層と、上層に塗布されたフォトレジストとを備え、多くのサブミクロンサイズのホールを形成するために、フォトレジストをパターン化し、上層を介して最上電気伝導層に開口部をエッチングして上層の開口部を介して最上電気伝導層にざらざらした表面を形成し、上層の上に不動態化膜を蒸着してワイヤボール接着用にワイヤリングパッド窓を形成する方法である。
【０００７】
集積回路を形成するためのＣｕワイヤを備えたＣｕパッドのワイヤ接着の技術領域では、Ｃｕ単体パッドにＣｕ単体ワイヤを接着させた場合の接着の質が最もよく、上記Ｃｕ単体ワイヤの抵抗は最も低い。しかし、Ｃｕ単体には自己不動態化効果がないので、Ｃｕが、腐食・酸化する危険性がある。従って、この技術を用いる場合、Ｃｕパッドに接着したＣｕワイヤを提供する必要がある。これによって、この製造によって形成された銅および集積回路の自己不動態化を達成し、それによってそれらの腐食および酸化を防止でき、自己不動態化力と結びついた、強い接着力および質の良い接着が提供される。
【０００８】
（発明の概要）
本発明の目的の１つは、自己不動態化を特徴とするＣｕを用いて、接着の質が良く、かつ抵抗が低くなるように、Ｃｕパッドに接着したＣｕワイヤを提供することにある。
【０００９】
本発明の他の目的は、自己不動態化Ｃｕ合金を使用することによって、Ｃｕパッドに接着したＣｕワイヤの腐食および酸化を防止するために、接着の質が良く、かつ抵抗が低くなるように、Ｃｕパッド上に接着したＣｕワイヤを提供することにある。
【００１０】
本発明のさらなる目的は、１００％のＣｕ合金から製造されているＣｕワイヤおよびＣｕパッドを使用することによって、接着の質が良く、かつ抵抗が低くなるように、Ｃｕパッド上に接着したＣｕワイヤを提供することにある。また、自己不動態化Ｃｕ合金を使用することによって、Ｃｕが腐食および酸化を防止する、Ｃｕパッドに接着したＣｕワイヤを提供することにある。
【００１１】
本発明のさらに他の目的は、ワイヤが硬質Ｃｕ合金ワイヤか２層Ｃｕワイヤのどちらかであり、Ｃｕ合金からなる内核およびＣｕ単体からなる外核を有する、Ｃｕパッドに接着したＣｕワイヤを提供し、これによって、Ｃｕ合金から自己不動態化を達成するために、Ｃｕパッドへの銅ワイヤの接着に関して接着力および接着の質を改善することにある。本発明のさらにまた他の目的は、Ｃｕワイヤが２層であり、Ｃｕパッドが２層である（Ｃｕ合金種層＋Ｃｕ単体充填層（ｐｕｒｅ Ｃｕ−ｆｉｌｌ））、Ｃｕパッドに接着するＣｕワイヤを提供し、自己不動態化を達成することによって腐食・酸化の防止を達成することにある。
【００１２】
本発明に関して、腐食および酸化を防止することと結びついた、接着力の良さおよび質の良い接着は、ＣｕパッドとＣｕワイヤとのワイヤ接着が、Ｃｕ合金（Ｃｕ−Ａｌ、Ｃｕ−Ｍｇ、Ｃｕ−Ｌｉ）を用いて行われる場合に、獲得される。
【００１３】
（図の簡単な説明）
図１は、Ｃｕパッドと接着する前の、Ｃｕ合金ワイヤを示す図である。また、Ｃｕパッドは、下地膜（全ての下地膜は誘電体内に配置されている）によって囲まれたＣｕ合金によって取り囲まれている。
【００１４】
図２は、Ｃｕパッドにワイヤ接着し、アニールした後のＣｕ合金ワイヤを示す図である。Ｃｕ合金ワイヤでは、形成された接着部がボールあるいはウェッジ形をしており、このワイヤには、図にＸで示されている自己不動態化を特徴とするドーパントリッチ境界面層がある。
【００１５】
（好ましい実施形態の詳述）
概して、本発明では、半導体デバイスまたは集積回路の形成用の、自己不動態化Ｃｕ合金を用いたＣｕパッドとＣｕワイヤとのワイヤ接着が、以下のプロセス順序によって行われる。
ａ）ワイヤおよび接着パッドを形成するために、誘電体に（デュアル）ダマシン構造をパターン化し、
ｂ）ＰＶＤ、ＣＶＤ、無電解、または他の知られている方法により金属下地膜を蒸着し。（このステップは、複数の最適なＣｕ合金を用いることによって、任意に選択されるものであってもよい）、
ｃ）最終的にＣｕを充填するために、ＰＶＤ、ＣＶＤまたは他の知られている方法によりＣｕ合金を種層として蒸着し）、
ｄ）電気メッキ、ＣＶＤ、無電解、ＰＶＤまたは他の知られている方法によりダマシン構造にＣｕ単体を充填し、
ｅ）長いＣｕ粒子（ｇｒａｉｎｓ）によって低抵抗Ｃｕ膜を形成するために、低温（＜２００℃）で、ＣＭＰを行う前にアニールし、しかし、Ｃｕ合金のドーパントの外への拡散は、ここでは抑制され、
ｆ）下地膜のＣＭＰに続いて、充填しすぎたＣｕをＣｕ−ＣＭＰによって除去する。
【００１６】
次に続くプロセス順序には、以下のような４つの可能な選択肢がある。
【００１７】
（選択肢Ａ）
７）Ｃｕ表面およびＣｕ下地膜境界面に、自己不動態化ドーパントリッチ層を形成するために、ＣＭＰ後にアニール（温度範囲：２５０℃〜４５０℃）し（温度を徐々に上昇させて始めることは、ヒロックの発生を抑えるために有益である。ドーパントリッチ表面層の初期形成後、ヒロックの発生は著しく減少する。）、８）Ｃｕ拡散障壁、Ｓｉ−窒化物、Ｂｌｏｋ、または、他の知られている技術方法により、誘電体キャップ層を蒸着する。この誘電体拡散障壁を完全に除去し、ＳｉＯ２蒸着または他の誘電体材料（例えば、低ｋ材料）の蒸着によって処理過程を継続することができる。
【００１８】
（選択肢Ｂ）
７）Ｃｕ拡散障壁、Ｓｉ−窒化物、Ｂｌｏｋ、または、他の知られている技術方法により、誘電体キャップ層を蒸着し、
８）Ｃｕ誘電体キャップ層境界面およびＣｕ下地膜境界面に自己不動態化ドーパントリッチ層を形成するために、アニールする（温度範囲：２５０℃〜４５０℃）。
【００１９】
（選択肢Ｃ）
７）ＣＭＰ後、温度範囲：２５０℃〜４００℃でアニールする。この温度は、９）よりも低い。キャップ層後のアニールは、Ｃｕ表面およびＣｕ下地膜境界面に位置する部分的な自己不動態化ドーパントリッチ層を形成するために、ほぼ５０℃で行われる。温度を徐々に上昇させて始めることは、ヒロックの発生を抑えるために有効である。ドーパントリッチ表面層の初期（部分的）形成の後、ヒロックの発生は、著しく減少する。
８）Ｃｕ拡散障壁、Ｓｉ−窒化物、Ｂｌｏｋ、または、他の知られている技術方法により、誘電体キャップ層を蒸着する。この誘電体拡散障壁を完全に除去し、ＳｉＯ２蒸着または他の誘電体材料（例えば、低ｋ材料）の蒸着によって処理過程を継続することができる。
９）下地膜およびキャップ層境界面上の最終的な自己不動態化層を形成するために、ＣＭＰアニールの後で、ポストキャップ層アニールを行う（温度範囲：３００℃〜４５０℃、７）よりも５０℃ほど高い）。２つのアニール工程７）および８）を有するこのアプローチは、ヒロックの発生および接着に対して有効である。
【００２０】
（選択肢Ｄ）
７）Ｃｕ拡散障壁、Ｓｉ−窒化物、Ｂｌｏｋ、または、他の知られている技術方法により、誘電体キャップ層を蒸着する。アニールを行わず、したがって、プロセス順序中のこの時点では、自己不動態化層の形成を行わない。
【００２１】
次のステップは、本発明のプロセスの鍵となるステップである。
１０）最終不動態化層を蒸着する（酸化物／窒化物の組み合わせ）。
１１）ポリイミドまたは感光性ポリイミド（ＰＳＰ１）層（任意選択）を蒸着する。
１２）リソグラフィーによって、および、パッド領域を開口するためのエッチングステップによって、ポリイミド（またはＰＳＰ１）および（Ｃｕの上の誘電体キャップ層を含む）最終不動態化をパターン化する。パッド開口エッチ（＋処理後）の間、Ｃｕ／キャップ層境界面に位置する自己不動態化層は、精査するために不要なものが取り除かれたＣｕ表面を備えるために除去される。
１３）チップを精査する。
１４）Ｃｕ合金ワイヤを備えた精査されたパッドのワイヤ接着を行う（ウェッジを打ち込む、または、ボールボンディングを行う）。そして、
１５）開口Ｃｕパッド表面およびＣｕワイヤに自己不動態化層を形成するために、接着されたチップを、温度２５０℃〜４５０℃でアニールする。
【００２２】
精査ステップ１３）と接着ステップ１４）との間に、比較的長い時間が経過する。この時間の間、Ｃｕパッドを保護するために、付加的なステップを、自己不動態化／保護層を精査されるＣｕ表面の形成に導入してもよい。接着する直前に、この層は、接着の質を最適にするための不要なものが取り除かれたＣｕパッド表面とするために、ウェットクリーニングすることによって除去される。
【００２３】
参考に、図１を示す。図１は、Ｃｕパッド１１に接着する前のＣｕ合金ワイヤ１０を示している。さらに、Ｃｕパッドは、下地膜１４によって誘電体１３から分離されたＣｕ合金１２によって取り囲まれている。
【００２４】
点線によって示したように、ポリイミド１５を誘電体の上に任意で蒸着してもよい。
【００２５】
図２から分かるように、アニール後のワイヤ接着の後、Ｘによって表された不動態化ドーパントリッチ境界面層１６および自己不動態化Ｃｕ表面１７を形成する。自己不動態化は、Ｃｕ合金、および、接着ボールまたはウェッジ１８を取り囲んでおり、パッドとワイヤ接着点との接合点に位置している。このドーパントリッチ自己不動態化層は、ヒロック構造をしておらず、腐食、酸化、および、Ｃｕの周囲の半導体デバイス領域外への拡散から、Ｃｕを保護する。
【００２６】
本発明では、Ｃｕ合金は、Ｃｕ−Ａｌ、Ｃｕ−Ｍｇ、Ｃｕ−Ｌｉ、および、他のよく知られたＣｕ合金であってもよい。また、Ｃｕ合金の他の部材中の非Ｃｕドーピング材料の濃度は、Ｃｕ合金の原子量％の約０．１〜約５．０％の範囲である。
【００２７】
自己不動態化Ｃｕ合金を用いたＣｕパッドとＣｕワイヤとのワイヤ接着は、本発明のプロセスによって生じた自己不動態化によって腐食および酸化からＣｕを保護するとともに、接着力を改善するために、特に重要である。
【００２８】
したがって、自己不動態化Ｃｕ合金を用いたＣｕパッドワイヤを備えたＣｕパッドは、Ｃｕ単体パッドに接着したＣｕ単体ワイヤに類似した接着の質および抵抗の低さを提供する。さらに、このＣｕパッドは、Ｃｕ単体パッドに接着したＣｕ単体ワイヤによって得られない自己不動態化効果も提供する。言い換えると、２層のＣｕパッドと組み合わせた２層のＣｕワイヤ（Ｃｕ合金種層＋Ｃｕ単体充填部）は、自己不動態化＋低抵抗と、接着力の強さとの最適の特徴を示している。
【００２９】
代表的な実施形態および詳述を、本発明の好ましい実施形態を説明するために示された、開示した本発明の様々な変更が、次に記載する特許請求の範囲に規定した本発明の範囲から逸れていないということは、当業者にとって明白である。
【図面の簡単な説明】
【図１】
Ｃｕパッドと接着する前の、Ｃｕ合金ワイヤを示す図である。また、Ｃｕパッドは、下地膜（全ての下地膜は誘電体内に配置されている）によって囲まれたＣｕ合金によって取り囲まれている。
【図２】
Ｃｕパッドにワイヤ接着し、アニーリングした後のＣｕ合金ワイヤを示す図である。Ｃｕ合金ワイヤでは、形成された接着部がボールあるいはウェッジ形をしており、このワイヤには、図にＸで示されている自己不動態化を特徴とするドーパントリッチ境界面層がある。

Claims (18)

  1. 改善された、ワイヤ接着したＣｕパッド、Ｃｕワイヤ部材を有する集積回路構造であって、
    上記Ｃｕパッド、Ｃｕワイヤ部材が、自己不動態化能、低抵抗性、高接着力を有し、酸化および腐食に対する抵抗力が向上していることを特徴としており、
    上記Ｃｕパッド、Ｃｕワイヤ部材が、
    メタライゼーション配線と、
    上記メタライゼーション配線とＣｕパッドを取り囲むＣｕ合金とを分離する下地膜と、
    上記下地膜を取り囲む誘電体と、
    Ｃｕ合金ワイヤに接着したＣｕパッドとを含んでおり、
    上記Ｃｕワイヤ部材は、
    ａ）上記Ｃｕ合金と下地膜との間のドーパントリッチ境界面と、
    ｂ）上記Ｃｕパッドの表面と、
    ｃ）上記ＣｕパッドとＣｕ合金ワイヤとの間の接着面と、
    ｄ）上記Ｃｕ合金ワイヤの表面と、に位置する自己不動態化領域を有することを特徴とする集積回路構造。
  2. 酸化物、窒化物、または、窒化物の化合物の不動態化層が、上記誘電体に蒸着され、その後に、約２５０℃〜約４５０℃の温度でアニールされる請求項１に記載の構造。
  3. 上記不動態化領域が、上記Ｃｕ合金の０．１〜約５．０原子量％の範囲で存在している請求項２に記載の構造。
  4. 上記Ｃｕ合金が、Ｃｕ−Ａｌ、Ｃｕ−Ｍｇ、および、Ｃｕ−Ｌｉを含んだ群から選択される請求項３に記載の構造。
  5. 上記Ｃｕ合金がＣｕ−Ａｌである請求項４に記載の構造。
  6. 上記Ｃｕ合金がＣｕ−Ｍｇである請求項４に記載の構造。
  7. 上記Ｃｕ合金がＣｕ−Ｌｉである請求項４に記載の構造。
  8. 改善された、Ｃｕワイヤ部材とワイヤ接着したＣｕパッドを含む集積回路構造の形成方法において、
    自己不動態化Ｃｕパッド、Ｃｕワイヤが、酸化および腐食に対する抵抗力を有し、上記Ｃｕパッドとメタライゼーション配線との境界面、および、上記ＣｕパッドとＣｕ合金ワイヤを接合している接着部との境界面における接着力が向上していることによって特徴付けられており、
    上記方法が、
    ａ）ワイヤおよび接着パッドを形成するために、誘電体にダマシン構造をパターン化するステップと、
    ｂ）金属下地膜を蒸着するステップと、
    ｃ）最終的にＣｕを充填するためにＣｕ合金を種層として蒸着するステップと、
    ｄ）上記ダマシン構造にＣｕ単体を充填するステップと、
    ｅ）長いＣｕ粒子によって低抵抗Ｃｕ膜を形成するために、低温（＜２００℃）で、ＣＭＰを行う前にアニールし、Ｃｕ合金のドーパントの外への拡散を防ぐステップと
    ｆ）充填しすぎたＣｕを除去するためにＣｕ−ＣＭＰを行い、その後に、下地膜のＣＭＰを行うステップと、
    ｇ）上記Ｃｕ表面およびＣｕ下地膜境界面で、自己不動態化ドーパントリッチ層を形成するために、約２５０℃〜約４５０℃の温度範囲で、ＣＭＰ後にアニールするステップと、
    ｈ）ポリイミド層を蒸着するステップと、
    ｉ）上記ポリイミドをパターン化し、精査するために不要なものが取り除かれたＣｕ表面を提供するために、パッド領域を開口するリソグラフィー工程およびエッチング工程を行って、不動態化を完了するステップと、
    ｊ）上記チップを精査するステップと、
    ｋ）上記精査されたパッドとＣｕ合金ワイヤとをワイヤ接着するステップと、
    ｌ）上記開口Ｃｕパッド表面およびＣｕワイヤ上に自己不動態化層を形成するために、約２５０℃〜約４５０℃の温度で、接着されたチップをアニールするステップとからなる集積回路構造の形成方法。
  9. ステップａ）の後で、最適な量のＣｕ合金を蒸着することによって、ステップｂ）が除かれる請求項８に記載のプロセス。
  10. 改善された、Ｃｕワイヤ部材とワイヤ接着したＣｕパッドを含む集積回路構造の形成方法において、
    自己不動態化Ｃｕパッド、Ｃｕワイヤが、酸化および腐食に対する抵抗力を有し、上記Ｃｕパッドとメタライゼーション配線との境界面、および、上記ＣｕパッドとＣｕ合金ワイヤを接合している接着部との境界面における接着力が向上していることによって特徴付けられており、
    上記方法が、
    ａ）ワイヤおよび接着パッドを形成するために、誘電体にダマシン構造をパターン化するステップと、
    ｂ）金属下地膜を蒸着するステップと、
    ｃ）最終的にＣｕを充填するためにＣｕ合金を種層として蒸着するステップと、
    ｄ）上記ダマシン構造にＣｕ単体を充填するステップと、
    ｅ）長いＣｕ粒子によって低抵抗Ｃｕ膜を形成するために、低温（＜２００℃）で、ＣＭＰを行う前にアニールし、Ｃｕ合金のドーパントの外への拡散を防ぐステップと、
    ｆ）充填しすぎたＣｕを除去するためにＣｕ−ＣＭＰを行い、その後に、下地膜のＣＭＰを行うステップと、
    ｇ）誘電体キャップ層を蒸着するステップと、
    ｈ）上記Ｃｕ誘電体キャップ境界面およびＣｕ下地膜境界面に自己不動態化ドーパントリッチ層を形成するために、約２５０℃〜約４５０℃の温度でアニールするステップと、
    ｉ）ポリイミド層を蒸着するステップと、
    ｊ）上記ポリイミドをパターン化し、精査するために不要なものが取り除かれたＣｕ表面を提供するために、パッド領域を開口するリソグラフィー工程およびエッチング工程を行って、不動態化を完了するステップと、
    ｋ）上記チップを精査するステップと、
    ｌ）上記精査されたパッドとＣｕ合金ワイヤとをワイヤ接着するステップと、
    ｍ）上記開口ＣｕパッドおよびＣｕワイヤ上に自己不動態化層を形成するために、約２５０℃〜約４５０℃の温度で、接着されたチップをアニールするステップとからなる集積回路構造の形成方法。
  11. ステップａ）の後で、最適な量のＣｕ合金を蒸着することによって、ステップｂ）が除かれる請求項１０に記載のプロセス。
  12. 改善された、Ｃｕワイヤ部材とワイヤ接着したＣｕパッドを含む集積回路構造の形成方法において、
    自己不動態化Ｃｕパッド、Ｃｕワイヤが、酸化および腐食に対する抵抗力を有し、上記Ｃｕパッドとメタライゼーション配線との境界面、および、上記ＣｕパッドとＣｕ合金ワイヤを接合している接着部との境界面における接着力が向上していることによって特徴付けられており、
    上記方法が、
    ａ）ワイヤおよび接着パッドを形成するために、誘電体にダマシン構造をパターン化するステップと、
    ｂ）金属下地膜を蒸着するステップと、
    ｃ）最後にＣｕを充填するためにＣｕ合金を種層として蒸着するステップと、
    ｄ）ダマシン構造にＣｕ単体を充填するステップと、
    ｅ）長いＣｕ粒子によって低抵抗Ｃｕ膜を形成するために、低温（＜２００℃）で、ＣＭＰを行う前にアニールし、Ｃｕ合金のドーパントの外への拡散を防ぐステップと、
    ｆ）下地膜のＣＭＰに続いて、充填しすぎたＣｕを除去するステップと、
    ｇ）上記Ｃｕ表面およびＣｕ下地膜境界面で、部分的に自己不動態化ドーパントリッチ層を形成するために、約２５０℃〜約４００℃の温度で、ＣＭＰ後にアニールするステップと、
    ｈ）誘電体キャップ層を蒸着するステップと、
    ｉ）上記下地膜およびキャップ層境界面で最終自己不動態化層を形成するために、約３００℃〜約４５０℃の温度で、ポストキャップ層アニールを行うステップと、
    ｊ）ポリイミド層を蒸着するステップと、
    ｋ）上記ポリイミドをパターン化し、精査するために不要なものが取り除かれたＣｕ表面を提供するために、パッド領域を開口するリソグラフィー工程およびエッチング工程を行って、不動態化を完了するステップと、
    ｌ）上記チップを精査するステップと、
    ｍ）上記精査されたパッドとＣｕ合金ワイヤとをワイヤ接着するステップと、
    ｎ）上記開口Ｃｕパッド表面およびＣｕワイヤ上に自己不動態化層を形成するために、２５０℃〜約４５０℃の温度で、接着されたチップをアニールするステップとからなる集積回路構造の形成方法
  13. ステップａ）の後で、最適な量のＣｕ合金を蒸着することによって、ステップｂ）が除かれる請求項１２に記載の方法。
  14. 改善された、Ｃｕワイヤ部材とワイヤ接着したＣｕパッドを含む集積回路構造の形成方法において、
    自己不動態化Ｃｕパッド、Ｃｕワイヤが、酸化および腐食に対する抵抗力を有し、上記Ｃｕパッドとメタライゼーション配線との境界面、および、上記ＣｕパッドとＣｕ合金ワイヤを接合している接着部との境界面における接着力が向上していることによって特徴付けられており、
    上記方法が、
    ａ）ワイヤおよび接着パッドを形成するために、誘電体にダマシン構造をパターン化するステップと、
    ｂ）金属下地膜を蒸着するステップと、
    ｃ）最終的にＣｕを充填するためにＣｕ合金を種層として蒸着するステップと、
    ｄ）上記ダマシン構造にＣｕ単体を充填するステップと、
    ｅ）長いＣｕ粒子によって低抵抗Ｃｕ膜を形成するために、低温（＜２００℃）で、ＣＭＰを行う前にアニールし、Ｃｕ合金のドーパントの外への拡散を防ぐステップと、
    ｆ）充填しすぎたＣｕを除去するためにＣｕ−ＣＭＰを行い、その後に、下地膜のＣＭＰを行うステップと、
    ｇ）上記Ｃｕ表面およびＣｕ下地膜境界面で、自己不動態化ドーパントリッチ層を形成するために、約２５０℃〜約４５０℃の温度範囲で、ＣＭＰ後にアニールするステップと、
    ｈ）誘電体キャップ層を蒸着するステップと、
    ｉ）ポリイミド層を蒸着するステップと、
    ｊ）上記ポリイミドをパターン化し、精査するために不要なものが取り除かれたＣｕ表面を提供するために、パッド領域を開口するリソグラフィー工程およびエッチング工程を行って、不動態化を完了するステップと、
    ｋ）上記チップを精査するステップと、
    ｌ）上記精査されたパッドとＣｕ合金ワイヤとをワイヤ接着するステップと、
    ｍ）上記開口Ｃｕパッド表面およびＣｕワイヤ上に自己不動態化層を形成するために、約２５０℃〜約４５０℃の温度で、接着されたチップをアニールするステップとからなる集積回路構造の形成方法。
  15. ステップａ）の後で最適な量のＣｕ合金を蒸着することによって、ステップｂ）が除かれる請求項１５に記載のプロセス。
  16. 上記ＣｕパッドがＣｕ合金である請求項１に記載の構造。
  17. 上記Ｃｕワイヤが、Ｃｕ合金の内核、およびＣｕ単体の外部領域を有する２層であり、上記ＣｕパッドがＣｕ合金である請求項１に記載の構造。
  18. 上記ＣｕワイヤはＣｕ合金であり、上記ＣｕパッドはＣｕ合金である請求項１に記載の構造。
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JP2018037684A (ja) * 2015-03-10 2018-03-08 三菱電機株式会社 パワー半導体装置

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CN1484857A (zh) 2004-03-24
WO2002054491A3 (en) 2003-06-05
WO2002054491A2 (en) 2002-07-11
KR20040018248A (ko) 2004-03-02
JP3737482B2 (ja) 2006-01-18
KR100542120B1 (ko) 2006-01-11
US6515373B2 (en) 2003-02-04
CN1296997C (zh) 2007-01-24
US20020084311A1 (en) 2002-07-04

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