JP3478804B2 - 電気接続用導電パッドを準備する方法および形成された導電パッド - Google Patents

電気接続用導電パッドを準備する方法および形成された導電パッド

Info

Publication number
JP3478804B2
JP3478804B2 JP2001032285A JP2001032285A JP3478804B2 JP 3478804 B2 JP3478804 B2 JP 3478804B2 JP 2001032285 A JP2001032285 A JP 2001032285A JP 2001032285 A JP2001032285 A JP 2001032285A JP 3478804 B2 JP3478804 B2 JP 3478804B2
Authority
JP
Japan
Prior art keywords
copper pad
pad surface
electrical connection
layer
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001032285A
Other languages
English (en)
Other versions
JP2001267356A (ja
Inventor
カルロス・ジェイ・サムブセッティ
ダニエル・シー・エデルスタイン
ジョン・ジー・ガウディエロ
ジュディス・エム・ルビノ
ジョージ・ウォーカー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2001267356A publication Critical patent/JP2001267356A/ja
Application granted granted Critical
Publication of JP3478804B2 publication Critical patent/JP3478804B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/06—Wiring by machine
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04073—Bonding areas specifically adapted for connectors of different types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48769—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48869—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10271—Silicon-germanium [SiGe]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y10S428/924—Composite
    • Y10S428/926—Thickness of individual layer specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/936—Chemical deposition, e.g. electroless plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y10T428/12646—Group VIII or IB metal-base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12778—Alternative base metals from diverse categories
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986—Adjacent functionally defined components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は一般に、電気接続用
の導電パッドを準備する方法および形成されたパッドに
関し、詳細には、ワイヤボンドまたははんだバンプに電
気接続するための導電性銅パッド表面を形成する方法お
よび形成された導電性銅パッドに関する。
【０００２】
【従来の技術】半導体装置製造において、集積回路（Ｉ
Ｃ）チップは最終プロセス段階でパッケージに組み立て
られる。組み立てられたパッケージは次いで、大きな回
路の一部としてプリント回路板に接続される。集積回路
チップとの電気的連絡を確立するため、ワイヤ・ボンデ
ィング・プロセスまたははんだバンピング・プロセスを
使用して、ＩＣチップ上の多数の接合パッドを外部回路
に接続する。
【０００３】一般的なＩＣチップでは、トランジスタ、
抵抗などのアクティブ回路部品がチップの中央部、すな
わちアクティブ領域に配置され、接合パッドは、後段の
ボンディング・プロセス中にアクティブ回路部品が損傷
を受けないようアクティブ領域の周囲に配置される。ワ
イヤ・ボンディング・プロセスを実行するとき、このプ
ロセスは、チップ上の接合パッドへの金またはアルミニ
ウム線のボンディングを伴う。これは、超音波エネルギ
ーを用いてパッドとワイヤを融合させることによって実
施される。接合を形成させた後、ワイヤを接合パッドか
ら外側に引っ張る。このワイヤ・プリング・プロセスは
しばしば、接合パッド・リフトオフとして知られる不良
の原因となる。接合パッド・リフトオフが起こるのは、
接合パッドに金線を接続するプロセス中に接合パッドに
高レベルの応力がかかる、すなわち、下位の層との接着
が不十分である可能性がある層の上に比較的に大きく重
いボンドが置かれるためである。
【０００４】例えば、これらの層の間の接着に影響を及
ぼす要因の１つに、後段の高温プロセス中に下位の導電
層中へアルミニウムが拡散することを防ぐＴｉＮから形
成された拡散バリア層が一般的に使用されていることが
ある。利用される拡散バリア層、すなわちＴｉＮ、Ｔｉ
Ｗまたはその他の適当な合金は、接合パッド中の下位の
酸化物層と強く接着しない。これが、接合パッド・リフ
トオフ不良の原因の１つである。大きなボンディング応
力、強い引張り力なども、リフトオフ問題の一因であ
る。リフトオフの問題はほとんど、シリコン導電層と絶
縁層（すなわちＳｉＯ2層）の界面で起こる。
【０００５】アルミニウム線または金線によって電気接
続を形成するワイヤボンド・プロセスの他に、接合パッ
ドから第２レベル・パッケージングまたは回路板への電
子信号の伝達のためチップをパッケージに接続するはん
だバンプ（または「Ｃ４」）プロセスも使用されてい
る。はんだバンプ・プロセスはＩＢＭ社によってもっぱ
ら使用され、ＩＣ業界の大部分はワイヤボンド技術を使
用している。従来のワイヤボンド・プロセスではチップ
表面の接合パッドが、高度に自動化された標準ツールに
よるアルミニウム線または金線の接続に適したアルミニ
ウムから形成される。しかし、ＩＣチップのバック・エ
ンド・オブ・ライン（ＢＥＯＬ）の配線が全て銅配線で
ある最近の銅技術の導入で、はんだバンプおよびアルミ
ニウムまたは金ワイヤボンドはともに、銅接合パッド上
への直接処理、または相互拡散を防ぐための適当な薄膜
バリア金属をＡｌとＣｕの間に挟んでＣｕパッド上にパ
ターニングされた適当なＡｌキャップの追加（すなわ
ち、参照によって本明細書に組み込まれる１９９９年５
月１９日出願の「Robust Interconnect Structure」と
いう名称のＩＢＭ特許出願整理番号ＦＩ９９９−０７８
号）によって実行されるようになった。
【０００６】アルミニウム線または金線によって純粋な
銅の上に形成されたワイヤボンドは腐食、酸化および熱
拡散の問題にさらされるため、銅パッド上への直接ワイ
ヤボンドの実行は容易ではない。銅パッドへの直接ワイ
ヤボンドは信頼性が低く、障害が起こりやすい。Ａｌパ
ッド・キャップ技法は、付着に加えてリソグラフィック
・パターン（マスク）／エッチング・サイクルを追加す
るので、コストがかなり追加される。したがって、銅接
合パッド、すなわち銅チップ上の接合パッドのワイヤボ
ンドに対して、ＩＣ産業で使用することができるマスク
レスの解決法を提供することの商業的意義は大きい。
【０００７】
【発明が解決しようとする課題】したがって本発明の目
的は、電気接続用導電パッド表面を準備する方法であっ
て、従来の方法の欠点または短所を持たない方法を提供
することにある。
【０００８】本発明の他の目的は、ワイヤボンドまたは
はんだバンピング・プロセスによる電気接続用の導電パ
ッド表面を準備する方法を提供することにある。
【０００９】本発明の他の目的は、銅パッド表面上にま
ず保護層を形成し、次いで接着層を形成することによっ
て電気接続用導電パッド表面を準備する方法であって、
保護層と接着層がともに追加のフォトマスクおよびエッ
チング段階を必要としない方法を提供することにある。
（１９９９年５月１４日出願の「Self-Aligned Corrosi
on Stop for Copper C4 and Wirebond」という名称のＩ
ＢＭ特許出願整理番号Ｆｕ９９８−１８１号を参照によ
って本明細書に組み込む。）
【００１０】本発明の他の目的は、最初にリンまたはホ
ウ素含有金属合金の保護フィルム層を銅パッドの表面に
付着させることによって、電気接続用導電パッド表面を
準備する方法を提供することにある。
【００１１】本発明の他の目的は、銅パッド表面に以前
に形成した保護層上に貴金属の接着層を付着させること
によって、電気接続用銅パッド表面を準備する方法を提
供することにある。
【００１２】本発明の他の目的は、電気接続用銅パッド
表面を準備する方法であって、保護層の付着の前に貴金
属の核生成層を銅パッド表面に付着させる段階をさらに
含む方法を提供することにある。
【００１３】本発明の他の目的は、その上に電気接続を
形成するための導電パッドを提供することであって、銅
パッド表面、銅パッド表面上の保護層、およびワイヤボ
ンドまたははんだバンプを用いた電気接続を提供する保
護層上の接着層を含む導電パッドを提供することにあ
る。
【００１４】本発明の他の目的は、電気接続を提供する
ための電気構造であって、銅パッド表面、銅パッド表面
上の保護層、保護層上の接着層、および接着層と一体に
形成されたワイヤボンドまたははんだバンプ電気接続を
含む電気構造を提供することにある。
【００１５】
【課題を解決するための手段】本発明によれば、ワイヤ
ボンドまたははんだバンプを用いた電気接続用の銅パッ
ド表面を準備する方法、およびこの方法によって形成さ
れる装置が提供される。
【００１６】好ましい実施形態では、電気接続用銅パッ
ド表面を準備する方法を、まず最初に銅パッド表面を用
意する操作段階、リンまたはホウ素含有金属合金の保護
層を銅パッド表面上に付着させる操作段階、および貴金
属の接着層を保護層上に付着させる段階によって実施す
ることができる。
【００１７】電気接続用銅パッド表面を準備するこの方
法はさらに、保護層の付着の前に、貴金属の核生成層を
銅パッド表面上に付着させる段階を含むことができる。
この方法はさらに、酸溶液中で銅パッド表面を清浄化す
る段階、および貴金属の核生成層を銅パッド表面上に付
着させる段階を含むことができる。この核生成層は、パ
ラジウムまたはパラジウム・ナノパーティクルから付着
させることができる。Ｐｄナノパーティクルを最も一般
的に使用するが、ルテニウム、レニウムなどのその他の
貴金属のナノパーティクルを使用することもできる。こ
の方法はさらに、核生成層を付着させた後に銅パッド表
面を水洗する段階、または保護層を無電解めっき技法に
よって付着させる段階を含むことができる。保護層を付
着させる段階はさらに、銅パッド表面を、コバルト・イ
オン、タングステン酸イオン、ホウ酸、クエン酸イオ
ン、酢酸鉛および次亜リン酸塩を含む無電解浴中の加熱
緩衝溶液と接触させる段階、および次いで銅パッド表面
を、ニッケル・イオン、クエン酸イオン、ホウ酸、次亜
リン酸ナトリウムまたはジメチルアミノボランを含む加
熱無電解溶液と接触させる段階を含むことができる。
【００１８】電気接続用銅パッド表面を準備するこの方
法では、接着層を、Ａｕ、Ｐｔ、ＰｄおよびＡｇから成
るグループから選択された金属から形成することができ
る。接着層は、浸漬Ａｕ溶液にこのＩＣを浸すことによ
って形成することができる。接着層は、貴金属から、約
５００Å〜約４０００Åの厚さに形成することができ
る。リンまたはホウ素含有金属合金は、Ｎｉ−Ｐ、Ｃｏ
−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、
Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−Ｓｎ−Ｂ、Ｃｏ−Ｗ−Ｂ、
Ｎｉ−Ｗ−Ｂから成るグループから選択することができ
る。保護層は、リンまたはホウ素を含むＣｏまたはＮｉ
金属合金から、約１０００Å〜約１００００Åの厚さに
形成することができる。この方法はさらに、無電解めっ
き技法によって接着層上に貴金属層を、貴金属層の全厚
が約２０００Å〜約１２０００Åとなるように付着させ
る段階を含むことができる。保護層はまた、それぞれが
リンまたはホウ素含有金属合金である別個の２つの層を
含むことができる。例えば、保護層を、Ｃｏ−Ｗ−Ｐと
Ｎｉ−Ｐの複合層とすることができる。保護層をＮｉ−
ＰまたはＣｏ−Ｗ−Ｐ、接着層をＡｕとしてもよい。保
護層をＮｉ−Ｐ、接着層を浸漬Ａｕおよび無電解Ｐｄと
してもよい。この方法はさらに、シリコン・ウェーハ、
シリコン・ゲルマニウム・ウェーハまたはシリコン・オ
ン・インシュレータ・ウェーハ基板上に銅パッドを形成
する段階を含むことができる。
【００１９】電気接続用銅パッド表面を準備するこの方
法はさらに、銅パッド表面が載ったウェーハを個々のＩ
Ｃチップにダイシングする段階、および銅パッド表面上
へのワイヤボンドを形成する段階を含むことができる。
この方法はさらに、銅パッド表面が載ったウェーハをＩ
Ｃチップにダイシングする段階、および電気接続を実施
するためのはんだバンプを銅パッド表面上に形成する段
階を含むことができる。形成するはんだバンプを、蒸
着、電気めっき、スクリーン印刷また射出成形技法によ
るＰｂ／Ｓｎはんだボールとすることができる。
【００２０】本発明はさらに、その上に電気接続を形成
するための導電パッドを対象とする。この導電パッド
は、銅パッド表面、銅パッド表面上のリンまたはホウ素
含有金属合金の保護層、およびワイヤボンドまたははん
だバンプを用いた電気接続を提供する、保護層上の貴金
属の接着層を含む。
【００２１】その上に電気接続を形成するためのこの導
電パッドはさらに、銅パッド表面と保護層の間に貴金属
の核生成層を含む。この導電パッドはまた、銅パッド表
面と保護層の間にパラジウム、ルテニウムまたはレニウ
ム・ナノパーティクルの核生成層を含むことができる。
保護層は、Ｎｉ−Ｐ、Ｃｏ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−
Ｓｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−
Ｓｎ−Ｂ、Ｃｏ−Ｗ−ＢおよびＮｉ−Ｗ−Ｂから成るグ
ループから選択された材料から形成することができる。
保護層の厚さは、約１０００Å〜約１００００Å、好ま
しくは約３０００Åとすることができる。この導電パッ
ドはさらに、合計厚さ約２０００Å〜約１２０００Å、
好ましくは約９０００Åの貴金属層を形成する貴金属層
を前記接着層上に含むことができる。保護層はまた、そ
れぞれがリンまたはホウ素含有金属合金であり、互いに
緊密に接合された別個の２つの層を含むことができる。
この別個の２つの層をＣｏ−Ｗ−ＰおよびＮｉ−Ｐとす
ることができる。接着層は、Ａｕ、Ｐｔ、ＰｄおよびＡ
ｇから成るグループから選択された層とすることができ
る。接着層の厚さは、約５００Å〜約４０００Åとする
ことができる。保護層をＮｉ−ＰまたはＣｏ−Ｗ−Ｐ、
接着層をＡｕとすることができる。保護層をＮｉ−Ｐ、
接着層を浸漬Ａｕおよび無電解Ｐｄとしてもよい。この
導電パッドは、シリコン・ウェーハ、シリコン・ゲルマ
ニウム・ウェーハまたはシリコン・オン・インシュレー
タ・ウェーハ基板上に形成することができる。電気接続
は、ワイヤボンドまたははんだバンプから形成すること
ができる。
【００２２】本発明はさらに、電気接続を提供するため
の電気構造を対象とする。この電気構造は、銅パッド表
面、銅パッド表面上のリンまたはホウ素含有金属合金の
保護層、保護層上の貴金属の接着層、および接着層と一
体の電気接続を含む。電気接続は、ワイヤボンドまたは
はんだバンプとすることができる。
【００２３】電気接続を提供するためのこの電気構造は
さらに、銅パッド表面と保護層の間に貴金属の核生成層
を含むことができる。この核生成層は、パラジウム、ル
テニウムまたはレニウムのナノパーティクルから形成す
ることができる。接着層は、Ａｕ、Ｐｔ、ＰｄおよびＡ
ｇから選択された金属から形成することができる。保護
層は、Ｎｉ−Ｐ、Ｃｏ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓｎ
−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−Ｓｎ
−Ｂ、Ｃｏ−Ｗ−ＢおよびＮｉ−Ｗ−Ｂから成るグルー
プから選択された金属合金から形成することができる。
この電気構造はさらに、貴金属層の全厚が約２０００Å
〜約１２０００Åとなるように接着層上に付着させた貴
金属層を含むことができる。この電気構造はさらに、銅
パッドが載ったシリコン・ウェーハ、シリコン・ゲルマ
ニウム・ウェーハまたはシリコン・オン・インシュレー
タ・ウェーハ基板を含むことができる。
【００２４】本発明のこれらの目的、特徴および利点、
ならびにその他の目的、特徴および利点は、本明細書お
よび添付図面を検討することによって明らかとなろう。
【００２５】
【発明の実施の形態】本発明は、ワイヤボンドまたはは
んだバンプによる電気接続用の銅パッド表面を準備する
方法を開示する。本発明はさらに、その上に電気接続を
形成するための銅導電パッド、および銅パッド表面上に
形成されたワイヤボンドまたははんだバンプを含む電気
接続を提供するための電気構造を開示する。
【００２６】電気接続用銅パッド表面を準備するこの方
法では、まず最初に銅パッド表面を用意し、次いでリン
またはホウ素含有金属合金の保護層を銅パッド表面に付
着させ、次いで、ワイヤボンドまたははんだバンプを用
いた電気接続を実施するための貴金属の接着層を保護層
上に付着させる。この方法はさらに、保護層の付着前
に、パラジウムなどの貴金属の核生成層を銅パッド表面
上に付着させる段階を含むことができる。核生成層の付
着前に、銅パッド表面を酸溶液によって洗浄化してもよ
い。保護層は、リンまたはホウ素含有金属合金、例えば
Ｎｉ‐Ｐ、Ｃｏ−Ｗ−Ｐから形成することができる。保
護層は、約１０００Å〜約１００００Å、好ましくは約
３０００Å〜約７０００Åの厚さに形成する。
【００２７】本発明は、電子チップ上の銅パッドの直接
ワイヤボンディングを可能にするプロセスを、最初に複
合金属バリア層を銅パッド上に付着させる選択的自己整
合技法によって提供する。このバリア層は、拡散および
腐食に対して銅表面を保護し、同時に、信頼性の高いワ
イヤボンディング能力を提供する。本明細書に開示した
プロセスを使用して、銅ウェーハ上にバリア・メタラジ
を付着させることができる。このウェーハをダイシング
し、ウェーハ即ち電子チップの上の銅パッドに対してワ
イヤボンディング品質を試験すると満足な結果が得られ
る。
【００２８】本発明は、銅パッド表面の保護および高信
頼ワイヤボンディング特性を同時に可能にするバリア・
メタラジを銅表面上に逐次的かつ選択的（マスクレス）
に付着させることによって、銅パッド上へのワイヤボン
ディングまたははんだバンピングを達成する。したがっ
て本発明は、蒸着またはスパッタリングによって銅パッ
ド上にアルミニウム層を付着させる通常なら必要なマス
ク可能の代替方法、すなわち費用のかかる代替方法を排
除する。本発明のバリア層は、選択的かつ自己整合的な
無電解めっき技法によって付着させることができる。し
たがって本発明は、フォトプロセッシング、選択的な
（マスクの要らない）すなわちフォトリソグラフィック
段階、費用のかかるマスク位置合せ手順、またはアルミ
ニウムのＲＩＥなどのやはり費用のかかる金属エッチン
グ段階を一切必要としない。本発明の新規な方法によっ
て提供される銅／バリア層のワイヤボンディングまたは
はんだバンピングは、プロセス上多数の利点を有する。
これには、銅に対する優れた接着性、熱処理下でのバリ
ア層を通した銅原子の拡散防止、腐食に対する銅表面の
保護、および銅パッドに接続されたアルミニウム線また
は金線の優れた接着性および引張り強度を可能にする、
バリア層の最上面への貴金属の付着が含まれる。
【００２９】図１に示す本発明の新規な方法ではまず、
銅チップ・プロセスのバック・エンド・オブ・ライン
（ＢＥＯＬ）のところの銅パッド１２の表面１４を一連
の化学段階、例えば第１の銅拡散バリア層１６の無電解
付着によって修飾する。第１の拡散バリア層１６は、リ
ンまたはホウ素を含むＮｉ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−
Ｓｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−
Ｓｎ−Ｂ、Ｃｏ−Ｗ−Ｂ、Ｎｉ−Ｗ−Ｂ合金などの金属
合金材料から付着させる。第１の拡散バリア層の適当な
厚さは約１０００Å〜約１００００Åであり、約３００
０Å〜約７０００Åであることが好ましい。本明細書の
文脈において「約」という語は、平均として与えた値か
ら±１０％の範囲にある値を意味する。
【００３０】第１の拡散バリア層１６を付着させた後、
浸漬Ａｕ溶液を使用した浸漬付着技術によって、拡散バ
リア層１６上に第２の層１８を付着させる。第２の層１
８の適当な厚さは約５００Å〜約４０００Åであり、約
１０００Å〜約２０００Åであることが好ましい。第１
の拡散バリア層すなわち保護層１６と第２の接着層１８
は、銅の保護および信頼性の高いワイヤボンド構造を提
供する２重層２０として付着される。あるいは、無電解
Ａｕ付着技法によって第２の層１８上に第３の層（図１
には図示されていない）を適用して、最終的なＡｕ層の
厚さを約４０００Å〜約１００００Å、好ましくは約４
０００Å〜約６０００Åに増大させてもよい。第３のＡ
ｕ層の目的は、より容易なワイヤボンディング・パラメ
ータおよびより大きなワイヤボンド接着強度を可能にす
ることにある。
【００３１】本発明の拡散バリア層１６の形成例を以下
に示す。
【００３２】例Ａ この例では、Ｃｕ／Ｃｏ−Ｗ−Ｐ（１０００Å）／Ｎｉ
−Ｐ（５０００Å）／浸漬Ａｕ（２０００Å）／無電解
Ａｕ（３０００Å〜５０００Å）から成る多層スタック
を形成する。リンをホウ素で置き換えた対応する拡散バ
リア構造を形成することもできる。
【００３３】例Ｂ この例では、Ｃｕ／Ｎｉ−Ｐ（５０００Å）／浸漬Ａｕ
（１０００〜２０００Å）で表される単一構造が利用さ
れ、Ｃｕ／Ｃｏ−Ｗ−Ｐ（５０００Å）／浸漬Ａｕ（２
０００Å）が提示される。リンをホウ素で置き換えた対
応するワイヤボンド構造を形成することもできる。
【００３４】例Ｃ この例では、Ｃｕ／Ｎｉ−Ｐ（５０００Å）／浸漬Ａｕ
（１０００〜２０００Å）／無電解Ｐｄから成る多層ス
タックが提供される。リンをホウ素で置き換えた対応す
るワイヤボンド構造を利用することもできる。
【００３５】本発明の新規な方法の実施ではまず、多層
銅接点パッドを含む銅ウェーハを、希硫酸に浸す清浄化
段階によって処理して、銅の表面から酸化物を除去す
る。次いで、パラジウム・イオン溶液に浸すことによっ
てこのウェーハを活性化させて、銅表面に多数のＰｄ金
属核を生成させる。次いでウェーハを、クエン酸ナトリ
ウムまたはＥＤＴＡ溶液中で洗い、基板およびウェーハ
表面のパッド間の領域から過剰なＰｄ核を除去する。次
にウェーハを、それぞれのケースで特定の浴組成を使用
してＣｏ−Ｐ、Ｎｉ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓｎ−
Ｐの層、およびリンの代わりにホウ素を含む対応する合
金の層を銅表面に付着させる本発明の無電解浴に浸す。
浴組成は、銅表面に付着させる合金の種類に応じて異な
り、固有であることがある。よく洗った後、市販の浸漬
Ａｕ溶液にウェーハを暴露する。最後に、所望の構造に
応じて、厚さ約３０００Å〜約５０００Åの追加の最終
無電解Ａｕ層および／または同じ厚さのＰｄ層を、先の
浸漬Ａｕ層上に適用することができる。次いで、図１お
よび２に示すように、連続的なワイヤボンド３０または
はんだバンプ４０を多層スタック上に形成する。
【００３６】本発明の無電解めっき法は、まずウェーハ
表面を、コバルト・イオン、ホウ酸、クエン酸イオン、
ならびにｐｐｍレベルの酢酸鉛および次亜リン酸塩を含
む無電解浴の加熱緩衝溶液に浸し、（Ｐｄイオンによっ
て）活性化することによって実施することができる。こ
うして銅パッド表面を１０００〜２０００ÅのＣｏ−Ｐ
接着層でコーティングし、その後よく水洗いする。次い
でウェーハ表面を、ニッケル・イオン、クエン酸イオ
ン、ホウ酸、および次亜リン酸ナトリウムまたはジメチ
ル・アミノ・ボランを含む別の加熱無電解溶液に浸し、
使用する浴に応じてＮｉＰまたはＮｉＢの厚さ約５００
０Å〜約７０００Åの層を銅上に付着させ、その後よく
水洗いする。最終付着段階では、ウェーハ表面を市販の
浸漬Ａｕ浴に浸して、無電解めっきした銅パッド表面１
４上に約１０００Å〜約２０００Åの新たなＡｕ層を付
着させる。
【００３７】図２に示すように、Ｐｂ／Ｓｎなどのはん
だ材料から成るはんだバンプ４０を、蒸着、電気めっ
き、スクリーン印刷または射出成形技法によって、最外
部のＡｕ層１８上に付着させる。
【００３８】本発明を例示的に説明してきたが、使用し
た用語は説明を意図したものであり、限定を意図したも
のでないことを理解されたい。
【００３９】さらに、好ましい代替実施形態に関して本
発明を説明してきたが、当業者なら、これらの教示を本
発明のその他の可能なバリエーションに容易に応用する
ことができることを理解されたい。
【００４０】排他的所有権または特権を主張する本発明
の実施形態は請求項に定義する。
【００４１】まとめとして、本発明の構成に関して以下
の事項を開示する。
【００４２】（１）電気接続用銅パッド表面を準備する
方法であって、銅パッド表面を用意する段階と、リンま
たはホウ素含有金属合金の保護層を前記銅パッド表面上
に選択的に付着させる段階と、貴金属の接着層を前記保
護層上に選択的に付着させる段階を含む方法。 （２）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、前記保護層の前記付着の前に、貴
金属の核生成層を前記銅パッド表面上に選択的に付着さ
せる段階をさらに含む方法。 （３）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、酸溶液中で前記銅パッド表面を清
浄化する段階と、貴金属の核生成層を前記銅パッド表面
上に選択的に付着させる段階をさらに含む方法。 （４）電気接続用銅パッド表面を準備する上記（２）に
記載の方法であって、前記核生成層をパラジウムから付
着させる方法。 （５）電気接続用銅パッド表面を準備する上記（３）に
記載の方法であって、前記核生成層を付着させた後に前
記銅パッド表面を水洗する段階をさらに含む方法。 （６）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、前記保護層を無電解めっき技法に
よって付着させる段階をさらに含む方法。 （７）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、保護層を付着させる前記段階が、
前記銅パッド表面を、コバルト・イオン、ホウ酸、クエ
ン酸イオン、酢酸鉛および次亜リン酸塩を含む無電解浴
中の加熱緩衝溶液と接触させる段階と、前記銅パッド表
面を、ニッケル・イオン、クエン酸イオン、ホウ酸、次
亜リン酸ナトリウムまたはジメチルアミノボランを含む
加熱無電解溶液と接触させる段階をさらに含む方法。 （８）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、前記接着層が、Ａｕ、Ｐｔ、Ｐｄ
およびＡｇから成るグループから選択された金属から形
成される方法。 （９）電気接続用銅パッド表面を準備する上記（１）に
記載の方法であって、前記接着層が、浸漬Ａｕ溶液に前
記ウェーハを浸すことによって形成される方法。 （１０）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記接着層が、貴金属から約５
００Å〜約４０００Åの厚さに形成される方法。 （１１）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記リンまたはホウ素含有金属
合金が、Ｎｉ−Ｐ、Ｃｏ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓ
ｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−Ｓ
ｎ−Ｂ、Ｃｏ−Ｗ−ＢおよびＮｉ−Ｗ−Ｂから成るグル
ープから選択される方法。 （１２）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記保護層が、リンまたはホウ
素含有金属合金から約１０００Å〜約１００００Åの厚
さに形成される方法。 （１３）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、無電解めっき技法によって前記
接着層上に貴金属層を、貴金属層の全厚が約２０００Å
〜約１２０００Åとなるように付着させる段階をさらに
含む方法。 （１４）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記保護層が、それぞれがリン
またはホウ素含有金属合金である別個の２つの層を含む
方法。 （１５）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記保護層がＣｏ−Ｗ−ＰとＮ
ｉ−Ｐの複合層であり、前記接着層がＡｕである方法。 （１６）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記保護層がＮｉ−ＰまたはＣ
ｏ−Ｗ−Ｐであり、前記接着層がＡｕである方法。 （１７）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記保護層がＮｉ−Ｐであり、
前記接着層が浸漬Ａｕおよび無電解Ｐｄである方法。 （１８）電気接続用銅パッド表面を準備する上記（２）
に記載の方法であって、前記核生成層として多数のＰｄ
ナノパーティクル（nanoparticle）を付着させる段階を
さらに含む方法。 （１９）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記銅パッド表面が、シリコン
・ウェーハ、シリコン・ゲルマニウム・ウェーハおよび
シリコン・オン・インシュレータ・ウェーハから成るグ
ループから選択された基板上に提供される方法。 （２０）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記銅パッド表面が載ったウェ
ーハを個々のＩＣチップにダイシングする段階と、前記
銅パッド表面上へのワイヤボンドを形成する段階をさら
に含む方法。 （２１）電気接続用銅パッド表面を準備する上記（１）
に記載の方法であって、前記銅パッド表面が載ったウェ
ーハをＩＣチップにダイシングする段階と、電気接続を
実施するためのはんだバンプを前記銅パッド表面上に形
成する段階をさらに含む方法。 （２２）電気接続用銅パッド表面を準備する上記（２
１）に記載の方法であって、形成される前記はんだバン
プが、スクリーン印刷または射出成形技法によるＰｂ／
Ｓｎはんだボールである方法。 （２３）その上に電気接続を形成するための導電パッド
であって、銅パッド表面と、前記銅パッド表面上のリン
またはホウ素含有金属合金の保護層と、ワイヤボンドま
たははんだバンプを用いた電気接続を提供する、前記保
護層上の貴金属の接着層を含む導電パッド。 （２４）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記銅パッド表面と
前記保護層の間に貴金属の核生成層をさらに含む導電パ
ッド。 （２５）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記銅パッド表面と
前記保護層の間にパラジウム・ナノパーティクルの核生
成層をさらに含む導電パッド。 （２６）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記保護層が、Ｎｉ
−Ｐ、Ｃｏ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓｎ−Ｐ、Ｎｉ
−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−Ｓｎ−Ｂ、Ｃｏ
−Ｗ−ＢおよびＮｉ−Ｗ−Ｂから成るグループから選択
された材料から形成された導電パッド。 （２７）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、リンまたはホウ素含
有金属の前記保護層の厚さが約１０００Å〜約１０００
０Åである導電パッド。 （２８）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、合計厚さ約２０００
Å〜約１２０００Åの貴金属層を形成する貴金属層を前
記接着層上にさらに含む導電パッド。 （２９）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記保護層がさら
に、それぞれがリンまたはホウ素含有金属合金であり、
互いに緊密に接合された別個の２つの層を含む導電パッ
ド。 （３０）その上に電気接続を形成するための上記（２
９）に記載の導電パッドであって、前記別個の２つの層
がＣｏ−Ｗ−ＰおよびＮｉ−Ｐである導電パッド。 （３１）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記接着層が、Ａ
ｕ、Ｐｔ、ＰｄおよびＡｇから成るグループから選択さ
れた層である導電パッド。 （３２）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記接着層の厚さが
約５００Å〜約４０００Åである導電パッド。 （３３）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記保護層がＮｉ−
ＰまたはＣｏ−Ｗ−Ｐであり、前記接着層がＡｕである
導電パッド。 （３４）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記保護層がＮｉ−
Ｐであり、前記接着層が浸漬Ａｕおよび無電解Ｐｄであ
る導電パッド。 （３５）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、シリコン・ウェー
ハ、シリコン・ゲルマニウム・ウェーハまたはシリコン
・オン・インシュレータ・ウェーハ基板上に形成された
導電パッド。 （３６）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記電気接続がワイ
ヤボンドによって形成される導電パッド。 （３７）その上に電気接続を形成するための上記（２
３）に記載の導電パッドであって、前記電気接続がはん
だバンプから形成される導電パッド。 （３８）電気接続を提供するための電気構造であって、
銅パッド表面と、前記銅パッド表面上のリンまたはホウ
素含有金属合金の保護層と、前記保護層上の貴金属の接
着層と、前記接着層と一体の電気接続を含む電気構造。 （３９）電気接続を提供するための上記（３８）に記載
の電気構造であって、前記電気接続がワイヤボンドまた
ははんだバンプである電気構造。 （４０）電気接続を提供するための上記（３８）に記載
の電気構造であって、前記銅パッド表面と前記保護層の
間に貴金属の核生成層をさらに含む電気構造。 （４１）電気接続を提供するための上記（４０）に記載
の電気構造であって、前記核生成層がパラジウム・ナノ
パーティクルである電気構造。 （４２）電気接続を提供するための上記（３８）に記載
の電気構造であって、前記接着層が、Ａｕ、Ｐｔ、Ｐｄ
およびＡｇから成るグループから選択された金属から形
成された電気構造。 （４３）電気接続を提供するための上記（３８）に記載
の電気構造であって、前記保護層が、Ｎｉ−Ｐ、Ｃｏ−
Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ−Ｓｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃ
ｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ−Ｓｎ−Ｂ、Ｃｏ−Ｗ−Ｂおよ
びＮｉ−Ｗ−Ｂから成るグループから選択された金属合
金から形成された電気構造。 （４４）電気接続を提供するための上記（３８）に記載
の電気構造であって、貴金属層の全厚が約２０００Å〜
約１２０００Åとなるように前記接着層上に付着させた
貴金属層をさらに含む電気構造。 （４５）電気接続を提供するための上記（３８）に記載
の電気構造であって、前記銅パッドがその上に載ったシ
リコン・ウェーハ、シリコン・ゲルマニウム・ウェーハ
またはシリコン・オン・インシュレータ・ウェーハ基板
をさらに含む電気構造。
【図面の簡単な説明】
【図１】その上にワイヤボンドが接続された本発明の銅
導電パッドの拡大断面図である。
【図２】その上にはんだバンプが形成された本発明の銅
導電パッドの拡大断面図である。
【符号の説明】
１０ 導電パッド １２ 銅パッド １４ 銅パッドの表面 １６ 拡散バリア層（保護層） １８ 接着層 ２０ １６と１８の２重層 ３０ ワイヤボンド ４０ はんだバンプ
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０５Ｋ 3/34 Ｈ０１Ｌ 21/92 ６０３Ｆ ６０３Ｅ 23/12 Ｗ (72)発明者 ダニエル・シー・エデルスタイン アメリカ合衆国10801 ニューヨーク州 ニュー・ロッシェル グラマシー・プレ ース 15 (72)発明者 ジョン・ジー・ガウディエロ アメリカ合衆国12603 ニューヨーク州 ポキプシー レジェンシー・ドライブ 18 (72)発明者 ジュディス・エム・ルビノ アメリカ合衆国10562 ニューヨーク州 オシニング ウォータービュー・ドライ ブ 11 (72)発明者 ジョージ・ウォーカー アメリカ合衆国10028 ニューヨーク州 ニューヨーク ヨーク・アべニュー 1540 ナンバー11ケイ (56)参考文献 特開 平11−307565（ＪＰ，Ａ) 特開 平10−287994（ＪＰ，Ａ) 特開 平11−121529（ＪＰ，Ａ) 特開 平10−135607（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 21/92 H01L 23/12 H05K 3/24 H05K 3/34 505

Claims (23)

    (57)【特許請求の範囲】
  1. 【請求項１】電気接続用銅パッド表面を準備する方法で
    あって、 銅パッド表面を用意する段階と、前記銅パッド表面をパラジウム・イオン溶液に浸すこと
    によって、Ｐｂ核の層を前記銅 パッド表面上に選択的に
    付着させる段階と、前記Ｐｄ核の層が付着された銅パッド表面を、クエン酸
    ナトリウムまたはＥＤＴＡ溶液 で洗浄し、前記銅パッド
    表面上から過剰なＰＢ核を除去する段階と、 リンまたはホウ素含有金属合金の保護層を前記銅パッド
    表面上に選択的に付着させる段階と、 貴金属の接着層を前記保護層上に選択的に付着させる段
    階を含む方法。
  2. 【請求項２】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、 酸溶液中で前記銅パッド表面を清浄化する段階と、 貴金属の核生成層を前記銅パッド表面上に選択的に付着
    させる段階をさらに含む方法。
  3. 【請求項３】電気接 電気接続用銅パッド表面を準備す
    る請求項１に記載の方法であって、前記保護層の前記付
    着の前に、貴金属の核生成層を前記銅パッド表面上に選
    択的に付着させる段階をさらに含む方法。続用銅パッド
    表面を準備する請求項２に記載の方法であって、前記核
    生成層をパラジウムから付着させる方法。
  4. 【請求項４】電気接続用銅パッド表面を準備する請求項
    ２に記載の方法であって、前記核生成層を付着させた後
    に前記銅パッド表面を水洗する段階をさらに含む方法。
  5. 【請求項５】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、前記保護層を無電解めっき技
    法によって付着させる段階をさらに含む方法。
  6. 【請求項６】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、保護層を付着させる前記段階
    が、 前記銅パッド表面を、コバルト・イオン、ホウ酸、クエ
    ン酸イオン、酢酸鉛および次亜リン酸塩を含む無電解浴
    中の加熱緩衝溶液と接触させる段階と、 前記銅パッド表面を、ニッケル・イオン、クエン酸イオ
    ン、ホウ酸、次亜リン酸ナトリウムまたはジメチルアミ
    ノボランを含む加熱無電解溶液と接触させる段階をさら
    に含む方法。
  7. 【請求項７】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、前記接着層が、Ａｕ、Ｐｔ、
    ＰｄおよびＡｇから成るグループから選択された金属か
    ら形成される方法。
  8. 【請求項８】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、前記接着層が、浸漬Ａｕ溶液
    に前記ウェーハを浸すことによって形成される方法。
  9. 【請求項９】電気接続用銅パッド表面を準備する請求項
    １に記載の方法であって、前記接着層が、貴金属から約
    ５００Å〜約４０００Åの厚さに形成される方法。
  10. 【請求項１０】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記リンまたはホウ素含有
    金属合金が、Ｎｉ−Ｐ、Ｃｏ−Ｐ、Ｃｏ−Ｗ−Ｐ、Ｃｏ
    −Ｓｎ−Ｐ、Ｎｉ−Ｗ−Ｐ、Ｃｏ−Ｂ、Ｎｉ−Ｂ、Ｃｏ
    −Ｓｎ−Ｂ、Ｃｏ−Ｗ−ＢおよびＮｉ−Ｗ−Ｂから成る
    グループから選択される方法。
  11. 【請求項１１】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記保護層が、リンまたは
    ホウ素含有金属合金から約１０００Å〜約１００００Å
    の厚さに形成される方法。
  12. 【請求項１２】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、無電解めっき技法によって
    前記接着層上に貴金属層を、貴金属層の全厚が約２００
    ０Å〜約１２０００Åとなるように付着させる段階をさ
    らに含む方法。
  13. 【請求項１３】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記保護層が、それぞれが
    リンまたはホウ素含有金属合金である別個の２つの層を
    含む方法。
  14. 【請求項１４】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記保護層がＣｏ−Ｗ−Ｐ
    とＮｉ−Ｐの複合層であり、前記接着層がＡｕである方
    法。
  15. 【請求項１５】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記保護層がＮｉ−Ｐまた
    はＣｏ−Ｗ−Ｐであり、前記接着層がＡｕである方法。
  16. 【請求項１６】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記保護層がＮｉ−Ｐであ
    り、前記接着層が浸漬Ａｕおよび無電解Ｐｄである方
    法。
  17. 【請求項１７】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記核生成層として多数の
    Ｐｄナノパーティクル（ｎａｎｏｐａｒｔｉｃｌｅ）を
    付着させる段階をさらに含む方法。
  18. 【請求項１８】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、前記銅パッド表面が、シリ
    コン・ウェーハ、シリコン・ゲルマニウム・ウェーハお
    よびシリコン・オン・インシュレータ・ウェーハから成
    るグループから選択された基板上に提供される方法。
  19. 【請求項１９】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、 前記銅パッド表面が載ったウェーハを個々のＩＣチップ
    にダイシングする段階と、 前記銅パッド表面上へのワイヤボンドを形成する段階を
    さらに含む方法。
  20. 【請求項２０】電気接続用銅パッド表面を準備する請求
    項１に記載の方法であって、 前記銅パッド表面が載ったウェーハをＩＣチップにダイ
    シングする段階と、 電気接続を実施するためのはんだバンプを前記銅パッド
    表面上に形成する段階をさらに含む方法。
  21. 【請求項２１】電気接続用銅パッド表面を準備する請求
    項２０に記載の方法であって、形成される前記はんだバ
    ンプが、スクリーン印刷または射出成形技法によるＰｂ
    ／Ｓｎはんだボールである方法。
  22. 【請求項２２】その上に電気接続を形成するための導電
    パッドであって、パラジウム・イオン溶液に浸すことによってＰｂ核の層
    を銅パッド表面上に選択的に付 着され、かつ、前記銅パ
    ッド表面をクエン酸ナトリウムまたはＥＤＴＡ溶液で洗
    浄することによって前記銅パッド表面上から過剰なＰＢ
    核を除去された銅パッド表面と、 前記銅パッド表面上のリンまたはホウ素含有金属合金の
    保護層と、 ワイヤボンドまたははんだバンプを用いた電気接続を提
    供する、前記保護層上の貴金属の接着層を含む導電パッ
    ド。
  23. 【請求項２３】電気接続を提供するための電気構造であ
    って、パラジウム・イオン溶液に浸すことによってＰｂ核の層
    を銅パッド表面上に選択的に付 着され、かつ、前記銅パ
    ッド表面をクエン酸ナトリウムまたはＥＤＴＡ溶液で洗
    浄することによって前記銅パッド表面上から過剰なＰＢ
    核を除去された銅パッド表面と、 前記銅パッド表面上のリンまたはホウ素含有金属合金の
    保護層と、 前記保護層上の貴金属の接着層と、 前記接着層と一体の電気接続を含む電気構造。
JP2001032285A 2000-02-22 2001-02-08 電気接続用導電パッドを準備する方法および形成された導電パッド Expired - Fee Related JP3478804B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/510,996 US6335104B1 (en) 2000-02-22 2000-02-22 Method for preparing a conductive pad for electrical connection and conductive pad formed
US09/510996 2000-02-22

Publications (2)

Publication Number Publication Date
JP2001267356A JP2001267356A (ja) 2001-09-28
JP3478804B2 true JP3478804B2 (ja) 2003-12-15

Family

ID=24033047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001032285A Expired - Fee Related JP3478804B2 (ja) 2000-02-22 2001-02-08 電気接続用導電パッドを準備する方法および形成された導電パッド

Country Status (8)

Country Link
US (1) US6335104B1 (ja)
JP (1) JP3478804B2 (ja)
KR (1) KR100375460B1 (ja)
CN (1) CN100386857C (ja)
GB (1) GB2365622B (ja)
MY (1) MY119885A (ja)
SG (1) SG90233A1 (ja)
TW (1) TW493260B (ja)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915888B1 (ja) * 1998-01-28 1999-07-05 日本特殊陶業株式会社 配線基板及びその製造方法
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6077766A (en) * 1999-06-25 2000-06-20 International Business Machines Corporation Variable thickness pads on a substrate surface
JP4613271B2 (ja) * 2000-02-29 2011-01-12 シャープ株式会社 金属配線およびその製造方法およびその金属配線を用いた薄膜トランジスタおよび表示装置
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6551931B1 (en) * 2000-11-07 2003-04-22 International Business Machines Corporation Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped
DE60108413T2 (de) * 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
US20040126548A1 (en) * 2001-05-28 2004-07-01 Waseda University ULSI wiring and method of manufacturing the same
JP3675407B2 (ja) * 2001-06-06 2005-07-27 株式会社デンソー 電子装置
US6762122B2 (en) * 2001-09-27 2004-07-13 Unitivie International Limited Methods of forming metallurgy structures for wire and solder bonding
US6683383B2 (en) * 2001-10-18 2004-01-27 Intel Corporation Wirebond structure and method to connect to a microelectronic die
TWI245395B (en) * 2001-11-20 2005-12-11 Advanced Semiconductor Eng Multi-chip module package device
JP3761461B2 (ja) 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
US6661098B2 (en) * 2002-01-18 2003-12-09 International Business Machines Corporation High density area array solder microjoining interconnect structure and fabrication method
JP2003303842A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置およびその製造方法
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6784544B1 (en) 2002-06-25 2004-08-31 Micron Technology, Inc. Semiconductor component having conductors with wire bondable metalization layers
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US6960828B2 (en) * 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
US6825564B2 (en) 2002-08-21 2004-11-30 Micron Technology, Inc. Nickel bonding cap over copper metalized bondpads
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US20040222540A1 (en) * 2003-05-06 2004-11-11 Weymouth Russell F. In-line lens manufacturing
WO2004101262A1 (en) * 2003-05-06 2004-11-25 Gentex Optics, Inc. In-line lens manufacturing
WO2004099467A1 (de) * 2003-05-09 2004-11-18 Basf Aktiengesellschaft Zusammensetzungen zur stromlosen abscheidung ternärer materialien für die halbleiterindustrie
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US7071421B2 (en) * 2003-08-29 2006-07-04 Micron Technology, Inc. Stacked microfeature devices and associated methods
US7276801B2 (en) 2003-09-22 2007-10-02 Intel Corporation Designs and methods for conductive bumps
US20050098605A1 (en) * 2003-11-06 2005-05-12 International Business Machines Corporation Apparatus and method for low pressure wirebond
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7068138B2 (en) * 2004-01-29 2006-06-27 International Business Machines Corporation High Q factor integrated circuit inductor
US7427557B2 (en) * 2004-03-10 2008-09-23 Unitive International Limited Methods of forming bumps using barrier layers as etch masks
TW200603698A (en) * 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US8844461B2 (en) * 2007-04-16 2014-09-30 Lam Research Corporation Fluid handling system for wafer electroless plating and associated methods
US8485120B2 (en) 2007-04-16 2013-07-16 Lam Research Corporation Method and apparatus for wafer electroless plating
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
JP2007305667A (ja) * 2006-05-09 2007-11-22 Toshiba Corp 半導体装置及びその製造方法
DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
KR100852207B1 (ko) 2007-06-04 2008-08-13 삼성전자주식회사 절연막 제거방법 및 금속 배선 형성방법
JP2009135345A (ja) * 2007-11-30 2009-06-18 Fujikura Ltd 半導体装置及びその製造方法
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
US8701281B2 (en) * 2009-12-17 2014-04-22 Intel Corporation Substrate metallization and ball attach metallurgy with a novel dopant element
CN102725836A (zh) * 2010-01-27 2012-10-10 住友电木株式会社 半导体装置
IL204422A0 (en) * 2010-03-11 2010-12-30 J G Systems Inc METHOD AND COMPOSITION TO ENHANCE CORROSION RESISTANCE OF THROUGH HOLE COPPER PLATED PWBs FINISHED WITH AN IMMERSION METAL COATING SUCH AS Ag OR Sn
EP2535929A1 (en) * 2011-06-14 2012-12-19 Atotech Deutschland GmbH Wire bondable surface for microelectronic devices
KR101283580B1 (ko) * 2011-12-14 2013-07-05 엠케이전자 주식회사 주석계 솔더 볼 및 이를 포함하는 반도체 패키지
CN104051337B (zh) * 2014-04-24 2017-02-15 上海珏芯光电科技有限公司 立体堆叠集成电路系统芯片封装的制造方法与测试方法
DE102014107018A1 (de) 2014-05-19 2015-11-19 Infineon Technologies Ag Halbleitervorrichtung mit lötbaren und bondbaren elektrischen Kontaktplättchen
CN106163108A (zh) * 2015-04-10 2016-11-23 深圳市安特讯科技有限公司 线路及其制作方法
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
US11682640B2 (en) 2020-11-24 2023-06-20 International Business Machines Corporation Protective surface layer on under bump metallurgy for solder joining

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359972A (ja) * 1989-07-27 1991-03-14 Yazaki Corp 電気接点
JP2731040B2 (ja) * 1991-02-05 1998-03-25 三菱電機株式会社 半導体装置の製造方法
US5757071A (en) * 1996-06-24 1998-05-26 Intel Corporation C4 substrate contact pad which has a layer of Ni-B plating
JP3728572B2 (ja) * 1996-10-31 2005-12-21 株式会社日立製作所 配線基板の製造方法
US6139977A (en) * 1998-06-10 2000-10-31 Lucent Technologies Inc. Palladium surface coating suitable for wirebonding and process for forming palladium surface coatings
JP2000151053A (ja) * 1998-11-12 2000-05-30 Shinko Electric Ind Co Ltd 回路基板

Also Published As

Publication number Publication date
US6335104B1 (en) 2002-01-01
GB2365622A (en) 2002-02-20
SG90233A1 (en) 2002-07-23
JP2001267356A (ja) 2001-09-28
GB0103577D0 (en) 2001-03-28
CN1311526A (zh) 2001-09-05
CN100386857C (zh) 2008-05-07
MY119885A (en) 2005-07-29
TW493260B (en) 2002-07-01
GB2365622B (en) 2004-08-11
KR20010083160A (ko) 2001-08-31
KR100375460B1 (ko) 2003-03-10

Similar Documents

Publication Publication Date Title
JP3478804B2 (ja) 電気接続用導電パッドを準備する方法および形成された導電パッド
US6869875B2 (en) Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
JP3771905B2 (ja) 入出力サイトのための共通ボール制限金属
KR910006949B1 (ko) 범프 및 그 형성방법
JP4068293B2 (ja) 再配置チップサイズパッケージ及びその製造方法
US5755859A (en) Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
JP5284314B2 (ja) 小型電子機器、その形成方法、およびシステム
US7665652B2 (en) Electronic devices including metallurgy structures for wire and solder bonding
US6015505A (en) Process improvements for titanium-tungsten etching in the presence of electroplated C4's
JP3737482B2 (ja) 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ
JP2004179288A (ja) 電子部品実装構造及びその製造方法
JPH0853781A (ja) Ｃ４製造のためのＴｉＷの選択的エッチング
US6362089B1 (en) Method for processing a semiconductor substrate having a copper surface disposed thereon and structure formed
JP2784122B2 (ja) 半導体装置の製法
CN105374701A (zh) 电镀工艺中的活化处理
JP2005109427A (ja) 半導体装置及びその製造方法
JP2000012605A (ja) 半導体チップの電極部の形成方法
JPH09148331A (ja) 半導体集積回路装置およびその製造方法
JPH04307736A (ja) 微細多層構造半導体素子の配線方法
JP3813077B2 (ja) 転写用はんだバンプシートおよびその製造方法、ならびに半導体装置およびプリント基板の製造方法
JPH02296336A (ja) 半導体回路バンプの製造方法
JP2839513B2 (ja) バンプの形成方法
JP4157693B2 (ja) 半導体装置及びその製造方法
JPH05109725A (ja) 半導体装置及び半導体装置の製造方法
JPH03177048A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081003

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081003

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091003

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091003

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101003

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101003

Year of fee payment: 7

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101003

Year of fee payment: 7

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101003

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111003

Year of fee payment: 8

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111003

Year of fee payment: 8

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111003

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121003

Year of fee payment: 9

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S202 Request for registration of non-exclusive licence

Free format text: JAPANESE INTERMEDIATE CODE: R315201

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121003

Year of fee payment: 9

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121003

Year of fee payment: 9

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131003

Year of fee payment: 10

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees