KR100375460B1 - 전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드 - Google Patents

전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드 Download PDF

Info

Publication number
KR100375460B1
KR100375460B1 KR10-2001-0005797A KR20010005797A KR100375460B1 KR 100375460 B1 KR100375460 B1 KR 100375460B1 KR 20010005797 A KR20010005797 A KR 20010005797A KR 100375460 B1 KR100375460 B1 KR 100375460B1
Authority
KR
South Korea
Prior art keywords
copper pad
layer
pad surface
kpa
protective layer
Prior art date
Application number
KR10-2001-0005797A
Other languages
English (en)
Other versions
KR20010083160A (ko
Inventor
샘부세티카를로스제이.
에델스타인다니엘씨.
고디엘로존지.
루비노주디스엠.
워커조지
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR20010083160A publication Critical patent/KR20010083160A/ko
Application granted granted Critical
Publication of KR100375460B1 publication Critical patent/KR100375460B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/06—Wiring by machine
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04073—Bonding areas specifically adapted for connectors of different types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48769—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48869—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10271—Silicon-germanium [SiGe]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y10S428/924—Composite
    • Y10S428/926—Thickness of individual layer specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/936—Chemical deposition, e.g. electroless plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y10T428/12646—Group VIII or IB metal-base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12778—Alternative base metals from diverse categories
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986—Adjacent functionally defined components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

향상된 확산 장벽 및 접착 특성을 갖는 전기 접속용 구리 패드면을 제공하기 위한 방법이 제공된다. 이 방법에서, 우선 산성 용액에서 세정된 구리 패드면이 제공된다. 그 다음, 인 또는 붕소-함유 금속 합금으로 된 보호층이 구리 패드면 상에 피착되고, 귀금속의 접착층이 보호층의 상부상에 피착된다. 보호층은 단일층일 수도 있고, Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B와 같이 인 또는 붕소-함유 급속 합금으로 형성된 서로 밀접하게 결합된 2개 이상의 층들일 수도 있다. 보호층에 대한 적절한 두께는 약 1000Å 내지 10000Å이며, 양호하게는 약 3000Å내지 7000Å이다. 접착층은, 두께가 약 500Å 내지 약 4000Å정도이고 양호하게는 1000Å 내지 2000Å정도인 Au, Pt, Pd, 및 Ag와 같은 귀금속으로 형성될 수 있다. 대안으로, 보호층의 무전해 피착 이전에 Pd로 된 핵형성층이 구리 도전 패드면과 보호층 사이에 피착된다. 대안으로, 무전해 Au 피착 공정에 의해 접착층의 상부에 추가적인 귀금속층이 피착되어 최종 귀금속층의 두께를 약 2000Å 내지 12000Å정도, 양호하게는, 약 4000Å 내지 6000Å정도로 증가시킨다. 본 발명은, 구리 패드면, 인 또는 붕소-함유 금속 합금으로된 보호층, 및 보호층의 상부에 피착된 귀금속의 접착층을 포함하며 그 상부에 전기 접속부를 형성하기 위한 도전 패드도 역시 공개한다. 나아가, 본 발명은 접착층의 상부에 일체로 형성된 전기 접속부, 즉, 와이어접합 또는 땜납 범프를 갖는 도전 패드를 포함하는 전기 구조물에도 역시 관련되어 있다.

Description

전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드{METHOD FOR PREPARING A CONDUCTIVE PAD FOR ELECTRICAL CONNECTION AND CONDUCTIVE PAD FORMED}
본 발명은 전기 접속용 도전 패드(conductive pad) 및 형성된 패드에 관한 것으로, 보다 구체적으로는 와이어접합(wirebond) 또는 땜납 범프(solder bump)에대한 전기 접속용 도전성 구리 패드면을 형성하기 위한 방법 및 형성된 도전성 구리 패드에 관한 것이다.
반도체 장치의 제조시에, 집적 회로(IC) 칩은 최종 공정 단계에서 패키지로 조립될 것이다. 그 다음 조립된 패키지는 대규모 회로의 일부로서 인쇄 회로 기판(printed circuit board)에 접속될 수 있다. 집적 회로 칩과의 전기적 통신을 이루기 위해, IC 칩상의 복수개의 접합 패드들을 와이어 접합 공정이나 땜납 범프 공정을 사용하여 외부 회로에 접속시킬 수도 있다.
전형적인 IC 칩에서, 트랜지스터와 같은 능동형 회로 소자, 저항등은 칩의 중앙부, 즉, 액티브 영역(active region)에 위치하는 반면, 접합 패드는 후속된 접합 공정에서 능동 회로 소자들이 손상되지 않도록 액티브 영역의 주변에 정렬된다. 와이어 접합 공정이 수행될 때, 이 공정은 금 또는 알루니늄 와이어를 초음파 에너지를 이용하여 용융시켜 칩상의 접합 패드에 접합시키는 단계를 포함한다. 접합이 형성된 후 와이어가 접합 패드로부터 잡아당겨진다(pulling away). 와이어 잡아당김 공정은 종종 접합 패드 들림(lift-off)이라 알려진 결함을 유발한다. 이러한 결함은 금 와이어를 접합 패드에 부착시키는 공정 동안에 높은 수준의 응력이 접합 패드에 작용하기 때문에, 즉, 하부층들에 대해 부실하게 접착된 층들상에 비교적 크고 무거운 접합부가 위치하기 때문에 발생한다.
예를 들어, 층들간 접착에 영향을 미치는 한 요인은, 후속된 고온 공정 동안에 하부에 놓인 도전층들 내로 알루미늄이 확산하는 것을 방지하기 위해 TiN으로 형성된 확산 장벽층(diffusion barrier layer)을 일반적으로 이용한다는 점이다.이용되는 확산 장벽층, 즉, TiN, TiW 또는 다른 적절한 합금들은 접합 패드 내의 하부 산화물층에 대해 강한 접착력을 가지지 않는다. 이것은 접합 패드 들림 결함을 초래하는 한 요인이 된다. 높은 접합 응력 및 높은 당김력과 같은 다른 이유들도 역시 들림 문제에 기여한다. 대부분의 들림 문제는 실리콘 도전층과 절연층(즉, SiO2)층간의 계면에서 발생한다.
전기적 접속을 형성하기 위한 알루미늄 또는 금 와이어에 의한 와이어접합 공정외에, 접합 패드로부터 제2 레벨 패키징이나 회로 보드로 전자 신호를 전송하기 위해 패키지에 칩을 부착시키는데 있어서, 땜납 범프(a.k.a "C4") 공정이 이용되어 왔다. 땜납 범프 공정은 IBM사에 의해 거의 독점적으로 이용되어 온 반면, 대부분의 IC 산업계는 와이어접합 기술을 사용해왔다. 종래의 와이어접합 공정에서, 칩 표면상의 접합 패드는 표준 툴 및 고도로 자동화된 툴에 의한 알루미늄 또는 금 와이어의 부착을 용이하게 해주는 알루미늄으로 형성된다. 그러나, 최근 IC칩 BEOL(Back-end-of-line)의 모든 배선이 구리 배선으로 이루어지는 구리 기술의 도입과 더불어, 땜납 범프 및 알루미늄 또는 구리 와이어접합 양쪽 모두를 구리 접합 패드상에서의 직접적인 처리를 통해 수행하거나, Cu 패드상에 패터닝된 적절한 Al 캡을 추가하되 Al과 Cu사이에 적절한 박막 장벽 금속을 삽입하여 이들간의 상호확산을 방지하도록 하는 방법(즉, 본 명세서에서 참고용으로 인용하는 "Robust Interconnect Structure"라는 제목으로 1999년 5월 19일 출원된 IBM 특허출원 도켓번호 FI 999-078)에 의해 수행하여 왔다.
구리 패드상에서의 직접적인 와이어접합은 용이하게 수행될 수 없는데, 이는 순수한 구리상에서 알루미늄이나 구리 와이어에 의해 형성된 와이어접합은 부식, 산화 및 열적 확산 문제에 놓이기 쉽기 때문이다. 구리 패드로의 직접적인 와이어접합은 신뢰성이 없으며 실패하기 쉽다. Al 패드 캡 기술은 피착외에도 리쏘그래픽 패턴(마스크) 및 에칭 싸이클을 요하기 때문에 비용이 상당히 든다. 따라서, 구리 접합 패드, 즉, IC 산업 분야에서 이용될 수 있는 구리칩상의 접합 패드의 와이어 접합시에 마스크를 사용하지 않는 해결책을 제공하는 것은 상업적으로 상당히 중요하다.
따라서, 종래 방법의 결점이나 단점을 갖지 않는 전기 접속용의 도전성 패드면을 제공하기 위한 방법을 제공하는 것이다.
본 발명의 또 다른 목적은 와이어접합이나 땜납 범프 공정중 어느 하나에 의해 전기 접속용 도전패드면을 준비하기 위한 방법을 제공하는 것이다.
본 발명의 역시 또 다른 목적은, 추가적인 포토마스크 및 에칭 단계를 요하지 않고 구리 패드면 상에 먼저 보호층을 형성한 다음 접착층을 형성함으로써 전기 접속용 구리 패드면을 제공하기 위한 방법을 제공하는 것이다(본 명세서에서 참고용으로 인용된 "Self-Aligned Corrosion Stop for Copper C4 and Wirebond"라는 제목으로 1999년 5월 14일 출원된 IBM사의 특허출원 도켓번호 Fu998-181호).
본 발명의 역시 또 다른 목적은 먼저 구리 패드면 상에 인 또는 붕소-함유 금속 합금으로 만들어진 보호막층을 피착함으로써, 전기 접속용 구리 패드면을 제공하기 위한 방법을 제공하는 것이다.
본 발명의 역시 또 다른 목적은 구리 패드면 상에 앞서 형성된 보호층의 상부에 귀금속(noble metal)의 접착층을 피착시켜 전기 접속용 구리 패드면을 제공하기 위한 방법을 제공하는 것이다.
본 발명의 역시 또 다른 목적은 보호층의 피착 이전에 구리 패드면상에 귀금속의 핵형성층(nucleation layer)을 피착하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법을 제공하는 것이다.
본 발명의 역시 또 다른 목적은 와이어접합 또는 땜납 범프를 이용한 전기 접속부를 제공하기 위해 그 상부에 구리 패드면과, 구리 패드면상의 보호층과, 보호층 상부상의 접착층을 포함하는 전기 접속부를 형성하기 위한 도전 패드를 제공하는 것이다.
본 발명의 역시 또 다른 목적은 구리 패드면, 구리 패드면상의 보호층, 보호층 상부상의 접착층, 및 접착층과 일체로 형성된 와이어접합 또는 땜납 범프로 된 전기 접속부를 포함하는 전기 접속을 제공하기 위한 전기 구조물을 제공하는 것이다.
본 발명에 따르면, 와이어접합 또는 땜납 범프를 이용한 전기 접속용 구리 패드면을 제공하기 위한 방법 및 이 방법에 의해 형성된 장치가 제공된다.
양호한 실시예에서, 전기 접속용 구리 패드면을 제공하기 위한 방법은, 먼저 구리 패드면을 제공하는 단계와, 구리 패드면상에 인 또는 붕소-함유 금속 합금의 보호층을 피착하는 단계와, 보호층의 상부상에 귀금속의 접착층을 피착하는 단계에의해 수행될 수 있다.
전기 접속용 구리 패드면을 제공하기 위한 방법은, 보호층의 피착 이전에 구리 패드면상에 귀금속의 핵형성층을 피착하는 단계를 더 포함한다. 이 방법은 산성 용액 내에서 구리 패드면을 세척하는 단계와, 귀금속의 핵형성층을 구리 패드면상에 피착하는 단계를 더 포함한다. 핵형성층은 팔라듐 또는 팔라듐 나노입자(nanoparticle)를 피착해서 형성할 수 있다. 루테늄(ruthenium)이나 레늄(rhenium)과 같은 다른 귀금속의 나노입자들도 사용될 수 있지만 Pd 나노입자가 가장 흔하게 사용된다. 이 방법은 핵형성층이 피착된 후 구리 패드면을 물로 린스(rinse)하는 단계, 또는 무전해 도금법(electroless plating technique)에 의해 보호층을 피착하는 단계를 더 포함할 수 있다. 보호층을 피착하는 단계는 코발트 이온(cobalt ion), 텅스텐산염 이온(tungstate ion), 붕산(boric acid), 구연산염 이온(citrate ion), 초산납(lead acetate), 차아인산염(hypophosphite)을 포함하는 무전해조(electroless bath)의 가열되고 버퍼링된 용액에 구리 패드면을 접촉시키는 단계와, 그 후, 니켈 이온, 구연산염 이온, 붕산, 나트륨 차아인산염(sodium hypophosphite) 또는 디메틸 아미노 보레인(dimethyl amino borane)을 포함하는 가열된 무전해액(heated electroless solution)에 구리 패드면을 접촉시키는 단계를 더 포함할 수도 있다.
전기 접속용 구리 패드면을 제공하기 위한 방법에서, 접착층은 Au, Pt, Pd, 및 Ag로 구성된 그룹으로부터 선택된 금속으로 형성될 수 있다. 접착층은 IC를 침잠 Au 용액(immersion Au solution) 내에 침잠시킴으로써 형성될 수 있다. 접착층은 두께가 대략 500Å 내지 4000Å인 귀금속으로 형성될 수 있다. 인 또는 붕소 함유 금속 합금은 Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B로 구성된 그룹으로부터 선택될 수 있다. 보호층은 두께가 대략 1000Å 내지 10000Å정도의 인 또는 붕소-함유 Co 또는 Ni 금속 합금으로 형성될 수 있다. 이 방법은 무전해 도금법에 의해 접착층의 상부에 귀금속을 피착하되 귀금속의 전체 두께가 2000Å 내지 12000Å정도 되도록 피착하는 단계를 더 포함할 수도 있다. 보호층은 각각이 인 또는 붕소-함유 금속 합금인 2개의 분리된 층을 더 포함할 수 있다. 예를 들어, 보호층은 Co-W-P 및 Ni-P의 복합층일 수도 있다. 또한 보호층은 Ni-P 또는 Co-W-P이고 접착층은 Au일 수도 있다. 또한 보호층은 Ni-P이고 접착층은 침잠(immersion) Au 또는 무전해(electroless) Pd일 수도 있다. 이 방법은 실리콘 웨이퍼, 실리콘-게르마늄 웨이퍼 또는 SOI(Silicon-On-Insulator) 기판상에 구리 패드를 형성하는 단계를 더 포함할 수도 있다.
전기 접속용 구리 패드를 제공하기 위한 방법은, 구리 패드면이 개개의 IC 칩상에 위치하는 웨이퍼를 다이싱(dicing)하는 단계와, 구리 패드면상에 와이어접합을 형성하는 단계를 더 포함할 수도 있다. 나아가, 이 방법은 구리 패드면이 IC칩들 내에 위치해 있는 웨이퍼를 다이싱하는 단계와, 전기 접속부를 형성하기 위해 구리 패드면상에 땜납 범프를 형성하는 단계를 더 포함할 수도 있다. 형성된 땜납 범프들은, 증발(evaporation), 도금(electro plating), 스크린 프린팅(screen printing) 또는 주입 몰딩 기법(injection molding technique)에 의한 Pb/Sn 땜납 볼(solder ball)이다.
본 발명은 구리 패드면, 구리 패드면 상의 인 또는 붕소 함유 금속 합금으로 된 보호층, 및 보호층 상부상의 귀금속 접착층을 그 상부에 포함하는 전기 접속부를 형성하기 위한 도전 패드에도 역시 관련되어 있다. 여기서, 접착층은 와이어접합 또는 땜납 범프로 전기 접속부를 제공한다.
그 상부에 전기 접속부를 형성하기 위한 도전 패드는 구리 패드면과 보호층 사이에 귀금속으로 된 핵형성층(nucleation layer)을 더 포함한다. 도전 패드는 구리 패드면과 보호층 사이에 팔라듐, 루테늄 또는 레늄 나노입자로된 핵형성층을 더 포함할 수 있다.
보호층은 Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B로 구성된 그룹으로 선택된 물질로 형성될 수 있다. 보호층은 약 1000Å 내지 약 10000Å의 두께를 가지며, 양호하게는 약 3000Å의 두께를 가진다. 도전 패드는 약 2000Å 내지 12000Å 정도의 두께, 양호하게는 약 9000Å 정도의 두께의 귀금속층을 접착층 상부에 더 포함할 수 있다. 보호층은, 각각이 인 또는 붕소 함유 금속 합금으로 이루어진 밀착된 2개의 분리된 층을 더 포함할 수 있다. 2개의 분리된 층은 Co-W-P 및 Ni-P일 것이다. 접착층은 Au, Pt, Pd, 및 Ag로부터 선택된 층일 수 있다. 접착층은 약 500Å 내지 4000Å의 두께를 가진다. 보호층은 Ni-P, Co-W-P인 반면 접착층은 Au일 수도 있다. 또한, 보호층은 Ni-P인 반면, 보호층은 침잠 Au 또는 무전해 Pd일 수도 있다. 도전 패드는 실리콘 기판, 실리콘-게르마늄 기판 또는 SOI 웨이퍼 상에 형성될 수 있다. 전기 접속부는 와이어접합 또는 땜납 범프로 형성된다.
본 발명은 구리 패드면, 구리 패드면 상의 인 또는 붕소 함유 금속 합금으로된 보호층, 보호층 상부상의 귀금속 접착층, 및 접착층과 일체로된 전기 접속부를 포함하는 전기 접속부를 제공하기 위한 전기 구조물에도 역시 관련되어 있다. 전기 접속부는 와이어접합 또는 땜납 범프일 것이다.
전기 접속부를 제공하기 위한 전기 구조물은 구리 패드면과 보호층 사이에 귀금속의 핵형성층을 더 포함할 수 있다. 핵형성층은 팔라듐, 루테늄 또는 레늄 나노입자들로 구성될 수 있다. 접착층은 Au, Pt, Pd, 및 Ag로부터 선택된 금속으로 형성될 것이다. 보호층은 Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B로 구성된 그룹으로 선택된 금속 합금으로 형성될 수 있다. 전기 구조물은 접착층의 상부상에 약 2000Å 내지 12000Å정도의 두께로 피착된 귀금속층을 더 포함할 수 있다. 전기 구조물은 실리콘 웨이퍼, 실리콘-게르마늄 웨이퍼, 또는 구리 패드가 위치하는 SOI 웨이퍼로된 기판을 더 포함할 수 있다.
도 1은 접속된 와이어접합을 그 상부에 갖는 본 발명의 구리 도전패드의 확대 단면도.
도 2는 그 상부에 땜납 범프가 형성된 본 발명의 구리 도전 패드의 확대 단면도.
<도면의 주요부분에 대한 부호의 설명>
12 : 구리 패드
14 : 구리패드면
16 : 확산장벽층
18 : 접착층
본 발명은 와이어접합 또는 땜납 범프에 의한 전기 접속용 구리 패드면을 제공하기 위한 방법을 공개한다. 본 발명은 그 상부에 전기 접속부를 형성하기 위한 구리 도전패드, 및 구리 패드면 상부상에 형성된 와이어접합 또는 땜납 범프를 포함하는 전기 접속부를 제공하기 위한 전기 구조물을 공개한다.
전기 접속용 구리 패드면을 제공하기 위한 방법에서, 먼저 구리 패드면이 제공된다. 그 다음, 인 또는 붕소-함유 금속 합금으로 된 보호층이 구리 패드면 상에 피착되고, 그 다음, 귀금속의 접착층이 보호층 상에 피착되어 와이어접합 또는 땜납 범프로 전기 접속부를 형성한다. 이 방법은 보호층의 피착 이전에 구리 패드면상에 팔라듐과 같은 귀금속의 핵형성층을 먼저 피착하는 단계를 더 포함할 수 있다. 핵형성층의 피착 이전에, 구리 패드면은 산성 용액(acid solution)에 의해 세정된다. 보호층은 인 또는 붕소 함유 금속 합금 또는 Ni-P, Co-W-P로 형성된다. 보호층은 약 1000Å 내지 10000Å의 두께로 형성되며, 양호하게는, 약 3000Å 내지 7000Å의 두께로 형성된다.
본 발명은 먼저 구리 패드상에 복합 금속 장벽층을 피착하는 자기-정렬 선택적 기법(self-aligned selective technique)에 의해 전자칩 상에서의 구리 패드의 직접적 와이어접합을 허용하는 공정을 제공한다. 장벽층은 구리 표면을 확산과 부식으로부터 보호하고, 동시에 신뢰성있는 와이어접합 능력을 제공한다. 본 명세서에서 공개되는 공정은, 만족할만한 와이어접합 품질을 위해 다이싱되고 테스팅된 구리 웨이퍼 상에 장벽 야금(barrier metallurgy)을 피착하기 위해 사용될 수 있다.
본 발명은, 장벽 야금을 구리 표면 상에 순차적이고도 선택적으로 (마스크없이) 피착시킴과 동시에 구리 패드면의 보호와 신뢰성있는 와이어접합 특성을 허용하는 구리 패드상에서의 와이어접합 또는 땜납 범프를 달성한다. 따라서, 본 발명에 따르면 증발이나 스퍼터링에 의해 구리 패드상에 알루미늄층을 피착시키는 마스크형 대안들, 즉, 값비싼 방법들이 필요없다. 본 발명의 장벽층은 선택적이고 자기-정렬적인 무전해도금법(electroless plating technique)에 의해 피착될 수 있다. 따라서, 본 발명은 어떠한 포토프로세싱 단계들을 요구하지 않으며, 선택적으로 (마스크없는), 즉, 포토리쏘그래픽 단계 또는 값비싼 마스크 정렬 절차 또는 알루미늄의 RIE와 같은 값비싼 금속 에칭 단계들을 요구하지 않는다. 본 발명의 신규한 방법에 의해 제공되는 구리/장벽층들의 와이어접합 또는 땜납 범핑은, 구리에 대한 우수한 접착성과, 열처리하에서 장벽층을 통한 구리 원자의 확산 방지와, 구리 표면의 부식 방지와, 구리 패드에 부착되는 알루미늄 또는 금 와이어의 우수한 접착력 또는 당김 강도를 가능하게 해주는 장벽의 최종 상부면상의 귀금속 피착을 포함하는 다양한 공정 이점을 제공한다.
도 1에 도시된 바와 같은 본 발명의 신규한 방법에서, 구리칩 공정의 BEOL(back-end-of-line)에서 구리 패드(12)의 표면(14)는 일련의 화학적 공정들, 예를 들어, 제1 구리 확산 장벽층(16)의 무전해 피착(electroless deposition)에 의해 수정된다. 제1 확산 장벽층(16)은 Ni-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B와 같은 인 또는 붕소-함유 합금과 같은 금속 합금 물질로 피착된다. 제1 확산 장벽층을 위한 적절한 두께는 약 1000Å 내지 10000Å 정도이며, 양호하게는 3000Å 내지 7000Å이다. 본 명세서에서, "약"이라는 용어는 평균값에서 ±10%범위의 값을 의미한다.
제1 확산 장벽층(16)이 피착된 후에, 침잠 Au 용액을 사용한 침잠 피착 기법(immersion deposition technique)에 의해 확산 장벽층(16)의 상부에 제2 층(18)이 피착된다. 제2 층(18)을 위한 적절한 두께는 약 500Å 내지 약 4000Å이며, 양호하게는, 약 1000Å 내지 2000Å 사이이다. 제1 확산 장벽층(16), 즉, 보호층과 제2 접착층(18)은 구리 보호 및 신뢰성있는 와이어접합 구조를 제공하는 이중층(dual-layer, 20)으로서 피착된다. 대안으로, 무전해 Au 피착 기법에 의해 (도1에는 도시되지 않은) 제3층이 제2 층(18)의 상부상에 피착되어 최종 Au층의 두께를 약 4000Å 내지 약 10000Å 정도, 양호하게는 약 4000Å 내지 6000Å정도로 증가시킨다. Au로 된 제3 층의 목적은 와이어접합 파리미터들을 더 용이하게 만들고 와이어접합 접착 강도를 더 크게 하는 것이다.
본 발명의 확산 장벽층(16)은 다음과 같은 예들로 형성될 수 있다.
예 A
이 예에서, Cu/Co-W-P(1000Å)/Ni-P(5000Å)/침잠 Au(2000Å)/무전해 Au(3000Å-5000Å)의 다중층 스택이 형성된다. 대응하는 확산 장벽 구조도 역시 붕소에 의해 대체된 인으로 형성될 수도 있다.
예 B
이 예에서, Cu/Ni-P(5000Å)/침잠 Au(1000-2000Å) 및 Cu/Co-W-P(5000Å)/침잠 Au(2000Å)으로 표현되는 독특한 구조(singular structure)가 제공된다. 인이 붕소에 의해 대체된 대응하는 와이어접합 구조가 역시 형성될 수 있다.
예 C
이 예에서, Cu/Ni-P(5000Å)/침잠 Au(1000-2000Å)/무전해 Pd로 된 다중층 스택이 제공된다. 인이 붕소에 의해 대체된 대응하는 와이어접합 구조가 역시 이용될 수도 있다.
본 발명의 신규한 방법을 실시함에 있어서, 다중층 구리 접촉 패드를 포함하는 구리 웨이퍼는, 먼저 구리 표면으로부터 산화물을 제거하기 위해 묽은 황산 용액에 침잠되는 세정 단계를 통해 처리된다. 그 다음, 웨이퍼는 구리 표면상에 다수의 Pd 금속 핵(nuclei)을 생성하기 위해 팔라듐 이온 용액에 침잠됨으로써 액티베이트된다. 그 다음, 웨이퍼는 기판 및 웨이퍼 표면의 패드간 영역으로부터 과도 Pd 핵을 제거하기 위해 구연산나트륨(sodium citrate) 또는 EDTA 용액내에서 린싱된다. 그 다음 웨이퍼는 본 발명의 무전해조(electroless bath)에서 침잠됨으로써 Co-P, Ni-P, Co-W-P, Co-Sn-P 및 인 대신 붕소를 포함하는 대응하는 합금층이 구리 표면 상에 피착된다. 여기서, 각각의 경우 구체적인 무전해조의 구성은 구리 표면 상에 피착되는 합금의 유형에 따라 다르며 고유할 것이다. 광범위한 린싱 처리후에, 웨이퍼는 상업적으로 이용가능한 침잠 Au 용액에 노출된다. 마지막으로, 원하는 구조에 따라, 약 3000Å 내지 약 5000Å의 두께를 갖는 무전해 Au 추가 최종층, 및/또는 대안적으로, 동일한 두께의 Pd층이 침잠 Au층상에 형성될 수 있다. 그 다음 성공적인 와이어접합(30) 또는 땜납 범프(40)이 도 1 및 2에 도시된 바와 같이 다중층 스택의 상부상에 형성된다.
본 발명의 무전해 도금법은, 코발트 이온, 붕산, 구연산염 이온, ppm 수준의 초산납 및 차아인산염을 포함하는 무전해조의 가열 버퍼링된 용액 내에 웨이퍼를 침잠시키고 (Pd 이온)에 의해 액티베이트시킴으로써 수행될 수 있다. 따라서 구리 패드 표면은, 1000-2000Å Co-P접착층으로 코팅되고 광범위한 워터 린싱(water rinsing)을 거친다. 그 다음 웨이퍼 표면은 니켈 이온, 구연산염 이온, 붕산 및 나트륨 차아인산염, 또는 디메틸 아미노 보레인을 포함하는 서로 다른 가열된 무전해 용액 내에 침잠된다. 여기서, 사용되는 무전해조에 따라 약 5000 내지 약 7000Å 두께의 NiP 또는 NiB 층이 구리 상에 피착되고 광범위한 워터 린싱을 거친다. 피착의 최종 단계에서, 웨이퍼 표면은 상업적으로 이용가능한 침잠 Au조(immersion Au bath) 내에 침잠되어 무전해 도금된 구리 패드면(14) 상에 약 1000Å 내지 약 2000Å 두께의 새로운 Au층을 피착시킨다.
도 2에 도시된 바와 같이, 땜납 범프(40)은, 증발, 전기 도금, 스크린 프린팅, 또는 주입 몰딩 기법등에 의해, Pb/Sn과 같은 납땜 재료로된 최외곽 Au층(18)의 상부 상에 피착된다.
본 발명이 예시적 방법으로 기술되었지만, 사용된 용어는 제한적인 의미가 아니라 설명을 위한 것임을 이해하여야 한다.
나아가, 본 발명이 양호한 실시예 및 대안적인 실시예의 관점에서 기술되었지만, 당업자는 본 발명의 다양한 다른 변형에 이러한 기법을 용이하게 적용할 수 있다는 것을 이해할 것이다.
구리에 대한 우수한 접착성과, 열처리하에서 장벽층을 통한 구리 원자의 확산 방지와, 구리 표면의 부식 방지와, 구리 패드에 부착되는 알루미늄 또는 금 와이어의 우수한 접착력 또는 당김 강도를 가능하게 해주는 장벽의 최종 상부면상의 귀금속 피착을 포함하는 다양한 공정 이점을 제공한다.

Claims (24)

  1. 전기 접속용 구리 패드면을 제공하기 위한 방법에 있어서,
    구리 패드면을 제공하는 단계와,
    인 또는 붕소-함유 금속 합금으로된 보호층을 상기 구리 패드면상에 선택적으로 피착하는 단계와,
    귀금속으로 된 접착층을 상기 보호층의 상부에 선택적으로 피착하는 단계
    를 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  2. 제1항에 있어서, 상기 보호층의 피착 이전에 귀금속으로 된 핵형성층(nucleation layer)을 상기 구리 패드면 상에 선택적으로 피착하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  3. 제1항에 있어서,
    상기 구리 패드면을 산성 용액 내에서 세정하는 단계와,
    귀금속의 핵형성층을 상기 구리 패드면상에 선택적으로 피착하는 단계
    를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  4. 제2항에 있어서, 상기 핵형성층은 팔라듐을 피착하여 형성되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  5. 제3항에 있어서, 상기 핵형성층이 피착된 후에 상기 구리 패드면을 물로 린싱(rinsing)하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  6. 제1항에 있어서, 무전해 도금법(electroless plating technique)에 의해 상기 보호층을 피착하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  7. 제1항에 있어서, 상기 보호층을 피착하는 단계는
    코발트 이온(cobalt ion), 붕산(boric acid), 구연산염 이온(citrate ion), 초산납(lead acetate) 및 차아인산염(hypophosphite)을 포함하는 무전해조 내의 가열되고 버퍼링된 용액에 상기 구리 패드면을 접촉시키는 단계와,
    니켈 이온, 구연산염 이온, 붕산, 나트륨 차아인산염 또는 디메틸 아미노 보레인(dimethyl amino borane)을 포함하는 가열된 무전해 용액에 상기 구리 패드면을 접촉시키는 단계
    를 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  8. 제1항에 있어서, 상기 접착층은 Au, Pt, Pd, 및 Ag로 구성된 그룹으로 선택된 금속으로 형성되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  9. 제1항에 있어서, 상기 접착층은 웨이퍼를 침잠 Au 용액 내에 침잠시킴으로써 형성되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  10. 제1항에 있어서, 상기 접착층은 두께가 약 500Å 내지 4000Å인 귀금속으로 형성되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  11. 제1항에 있어서, 상기 인 또는 붕소-함유 금속 합금은 Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B, 및 Ni-W-B로 구성된 그룹으로부터 선택되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  12. 제1항에 있어서, 상기 보호층은, 두께가 약 1000Å 내지 10000Å인 인 또는 붕소-함유 금속 합금으로 형성되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  13. 제1항에 있어서, 상기 접착층의 상부에 귀금속층을 무전해 도금법에 의해 피착하되 상기 귀금속층의 전체 두께가 약 2000Å 내지 12000Å가 되도록 하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  14. 제1항에 있어서, 상기 보호층은, 각각이 인 또는 붕소-함유 금속 합금으로된 2개의 분리된 층을 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  15. 제1항에 있어서, 상기 보호층은 Co-W-P 및 Ni-P의 복합층이고, 상기 접착층은 Au인 전기 접속용 구리 패드면을 제공하기 위한 방법.
  16. 제1항에 있어서, 상기 보호층은 Ni-P 또는 Co-W-P이고, 상기 접착층은 Au인 전기 접속용 구리 패드면을 제공하기 위한 방법.
  17. 제1항에 있어서, 상기 보호층은 Ni-P이고, 상기 접착층은 침잠 Au(immersion Au) 및 무전해 Pd(electroless Pd)인 전기 접속용 구리 패드면을 제공하기 위한 방법.
  18. 제2항에 있어서, 상기 핵형성층을 위해 복수개의 Pd 나노입자(nanoparticle)를 피착하는 단계를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  19. 제1항에 있어서, 상기 구리 패드면은, 실리콘 웨이퍼, 실리콘-게르마늄 웨이퍼, 및 SOI(Silicon-on-Insulator) 웨이퍼로 구성된 그룹으로부터 선택된 기판상에제공되는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  20. 제1항에 있어서,
    상기 구리 패드면이 개개의 IC칩들내에 위치하는 웨이퍼를 다이싱(dicing)하는 단계와,
    상기 구리 패드면상에 와이어접합(wirebond)을 형성하는 단계
    를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  21. 제1항에 있어서,
    상기 구리 패드면이 IC칩들내에 위치하는 웨이퍼를 다이싱(dicing)하는 단계와,
    전기 접속부를 형성하기 위해 상기 구리 패드면상에 땜납 범프를(solder bump)를 형성하는 단계
    를 더 포함하는 전기 접속용 구리 패드면을 제공하기 위한 방법.
  22. 제21항에 있어서, 상기 형성된 땜납 범프는 스크린 프린팅(screen printing) 또는 주입 몰딩 기법(injection molding technique)에 의한 Pb/Sn 땜납 볼(solder ball)인 전기 접속용 구리 패드면을 제공하기 위한 방법.
  23. 상부에 전기 접속부를 형성하기 위한 도전 패드에 있어서,
    구리 패드면과,
    상기 구리 패드면상의 인 또는 붕소-함유 금속 합금의 보호층과,
    상기 보호층 상부의 귀금속으로 된 접착층－상기 접착층은 와이어접합 또는 땜납 법프를 통해 전기 접속부를 제공함－
    을 포함하는 도전 패드.
  24. 전기 접속부를 제공하기 위한 전기 구조물에 있어서,
    구리 패드면과,
    상기 구리 패드면상의 인 또는 붕소-함유 금속 합금의 보호층과,
    상기 보호층 상부의 귀금속으로 된 접착층과,
    상기 접착층과 일체로 된 전기 접속부
    를 포함하는 전기 구조물.
KR10-2001-0005797A 2000-02-22 2001-02-07 전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드 KR100375460B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/510,996 US6335104B1 (en) 2000-02-22 2000-02-22 Method for preparing a conductive pad for electrical connection and conductive pad formed
US09/510,996 2000-02-22

Publications (2)

Publication Number Publication Date
KR20010083160A KR20010083160A (ko) 2001-08-31
KR100375460B1 true KR100375460B1 (ko) 2003-03-10

Family

ID=24033047

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0005797A KR100375460B1 (ko) 2000-02-22 2001-02-07 전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드

Country Status (8)

Country Link
US (1) US6335104B1 (ko)
JP (1) JP3478804B2 (ko)
KR (1) KR100375460B1 (ko)
CN (1) CN100386857C (ko)
GB (1) GB2365622B (ko)
MY (1) MY119885A (ko)
SG (1) SG90233A1 (ko)
TW (1) TW493260B (ko)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2915888B1 (ja) * 1998-01-28 1999-07-05 日本特殊陶業株式会社 配線基板及びその製造方法
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6077766A (en) * 1999-06-25 2000-06-20 International Business Machines Corporation Variable thickness pads on a substrate surface
JP4613271B2 (ja) * 2000-02-29 2011-01-12 シャープ株式会社 金属配線およびその製造方法およびその金属配線を用いた薄膜トランジスタおよび表示装置
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6551931B1 (en) * 2000-11-07 2003-04-22 International Business Machines Corporation Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped
DE60108413T2 (de) * 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
US20040126548A1 (en) * 2001-05-28 2004-07-01 Waseda University ULSI wiring and method of manufacturing the same
JP3675407B2 (ja) * 2001-06-06 2005-07-27 株式会社デンソー 電子装置
US6762122B2 (en) * 2001-09-27 2004-07-13 Unitivie International Limited Methods of forming metallurgy structures for wire and solder bonding
US6683383B2 (en) * 2001-10-18 2004-01-27 Intel Corporation Wirebond structure and method to connect to a microelectronic die
TWI245395B (en) * 2001-11-20 2005-12-11 Advanced Semiconductor Eng Multi-chip module package device
JP3761461B2 (ja) 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
US6661098B2 (en) * 2002-01-18 2003-12-09 International Business Machines Corporation High density area array solder microjoining interconnect structure and fabrication method
JP2003303842A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置およびその製造方法
US6784544B1 (en) * 2002-06-25 2004-08-31 Micron Technology, Inc. Semiconductor component having conductors with wire bondable metalization layers
US6960828B2 (en) * 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6825564B2 (en) * 2002-08-21 2004-11-30 Micron Technology, Inc. Nickel bonding cap over copper metalized bondpads
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US20060284326A1 (en) * 2003-05-06 2006-12-21 Weymouth Russell F Jr In-line lens manufacturing
US20040222540A1 (en) * 2003-05-06 2004-11-11 Weymouth Russell F. In-line lens manufacturing
RU2374359C2 (ru) * 2003-05-09 2009-11-27 Басф Акциенгезельшафт Составы для обесточенного осаждения тройных материалов для промышленности полупроводников
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US7071421B2 (en) * 2003-08-29 2006-07-04 Micron Technology, Inc. Stacked microfeature devices and associated methods
US7276801B2 (en) * 2003-09-22 2007-10-02 Intel Corporation Designs and methods for conductive bumps
US20050098605A1 (en) * 2003-11-06 2005-05-12 International Business Machines Corporation Apparatus and method for low pressure wirebond
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7068138B2 (en) * 2004-01-29 2006-06-27 International Business Machines Corporation High Q factor integrated circuit inductor
US7427557B2 (en) * 2004-03-10 2008-09-23 Unitive International Limited Methods of forming bumps using barrier layers as etch masks
TW200603698A (en) * 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US8844461B2 (en) * 2007-04-16 2014-09-30 Lam Research Corporation Fluid handling system for wafer electroless plating and associated methods
US8485120B2 (en) 2007-04-16 2013-07-16 Lam Research Corporation Method and apparatus for wafer electroless plating
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
JP2007305667A (ja) * 2006-05-09 2007-11-22 Toshiba Corp 半導体装置及びその製造方法
DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
KR100852207B1 (ko) 2007-06-04 2008-08-13 삼성전자주식회사 절연막 제거방법 및 금속 배선 형성방법
JP2009135345A (ja) * 2007-11-30 2009-06-18 Fujikura Ltd 半導体装置及びその製造方法
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
US8701281B2 (en) * 2009-12-17 2014-04-22 Intel Corporation Substrate metallization and ball attach metallurgy with a novel dopant element
SG182432A1 (en) * 2010-01-27 2012-08-30 Sumitomo Bakelite Co Semiconductor device
IL204422A0 (en) * 2010-03-11 2010-12-30 J G Systems Inc METHOD AND COMPOSITION TO ENHANCE CORROSION RESISTANCE OF THROUGH HOLE COPPER PLATED PWBs FINISHED WITH AN IMMERSION METAL COATING SUCH AS Ag OR Sn
EP2535929A1 (en) * 2011-06-14 2012-12-19 Atotech Deutschland GmbH Wire bondable surface for microelectronic devices
KR101283580B1 (ko) * 2011-12-14 2013-07-05 엠케이전자 주식회사 주석계 솔더 볼 및 이를 포함하는 반도체 패키지
CN104051337B (zh) * 2014-04-24 2017-02-15 上海珏芯光电科技有限公司 立体堆叠集成电路系统芯片封装的制造方法与测试方法
DE102014107018A1 (de) 2014-05-19 2015-11-19 Infineon Technologies Ag Halbleitervorrichtung mit lötbaren und bondbaren elektrischen Kontaktplättchen
CN106163108A (zh) * 2015-04-10 2016-11-23 深圳市安特讯科技有限公司 线路及其制作方法
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
US11682640B2 (en) 2020-11-24 2023-06-20 International Business Machines Corporation Protective surface layer on under bump metallurgy for solder joining

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359972A (ja) * 1989-07-27 1991-03-14 Yazaki Corp 電気接点
JP2731040B2 (ja) * 1991-02-05 1998-03-25 三菱電機株式会社 半導体装置の製造方法
US5757071A (en) * 1996-06-24 1998-05-26 Intel Corporation C4 substrate contact pad which has a layer of Ni-B plating
JP3728572B2 (ja) * 1996-10-31 2005-12-21 株式会社日立製作所 配線基板の製造方法
US6139977A (en) * 1998-06-10 2000-10-31 Lucent Technologies Inc. Palladium surface coating suitable for wirebonding and process for forming palladium surface coatings
JP2000151053A (ja) * 1998-11-12 2000-05-30 Shinko Electric Ind Co Ltd 回路基板

Also Published As

Publication number Publication date
TW493260B (en) 2002-07-01
GB2365622B (en) 2004-08-11
SG90233A1 (en) 2002-07-23
GB0103577D0 (en) 2001-03-28
JP2001267356A (ja) 2001-09-28
CN1311526A (zh) 2001-09-05
GB2365622A (en) 2002-02-20
CN100386857C (zh) 2008-05-07
MY119885A (en) 2005-07-29
US6335104B1 (en) 2002-01-01
KR20010083160A (ko) 2001-08-31
JP3478804B2 (ja) 2003-12-15

Similar Documents

Publication Publication Date Title
KR100375460B1 (ko) 전기 접속용 도전 패드를 형성하기 위한 방법 및 형성된 도전 패드
US10325876B2 (en) Surface finish for wirebonding
US6869875B2 (en) Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
JP3771905B2 (ja) 入出力サイトのための共通ボール制限金属
US6762122B2 (en) Methods of forming metallurgy structures for wire and solder bonding
US4970571A (en) Bump and method of manufacturing the same
KR100454381B1 (ko) 반도체 장치 및 그 제조 방법
US6015505A (en) Process improvements for titanium-tungsten etching in the presence of electroplated C4&#39;s
US7800240B2 (en) Under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure
JPH0145976B2 (ko)
KR20040018248A (ko) 집적 회로 구조체와 그 마련 공정
US6362089B1 (en) Method for processing a semiconductor substrate having a copper surface disposed thereon and structure formed
US5800726A (en) Selective chemical etching in microelectronics fabrication
US20080008900A1 (en) Ball Limiting Metallurgy, Interconnection Structure Including the Same, and Method of Forming an Interconnection Structure
JPH06140409A (ja) 半導体装置の製法
JP2000012605A (ja) 半導体チップの電極部の形成方法
JPH07183304A (ja) 半導体装置の製造方法
JPH03218644A (ja) 回路基板の接続構造
JPH09148331A (ja) 半導体集積回路装置およびその製造方法
JPH02296336A (ja) 半導体回路バンプの製造方法
US10796956B2 (en) Contact fabrication to mitigate undercut
JP2001352005A (ja) 配線基板および半導体装置
KR20020070584A (ko) 언더 범프 메탈의 제조방법 및 그 구조
JPH04146624A (ja) 半導体装置の電極の製造方法
JPH05109725A (ja) 半導体装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130130

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20140204

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20150209

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20160211

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee