KR100542120B1 - 집적 회로 구조체와 그 마련 공정 - Google Patents

집적 회로 구조체와 그 마련 공정 Download PDF

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KR100542120B1
KR100542120B1 KR1020037008825A KR20037008825A KR100542120B1 KR 100542120 B1 KR100542120 B1 KR 100542120B1 KR 1020037008825 A KR1020037008825 A KR 1020037008825A KR 20037008825 A KR20037008825 A KR 20037008825A KR 100542120 B1 KR100542120 B1 KR 100542120B1
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copper
wire
pad
layer
copper alloy
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Korean (ko)
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KR20040018248A (ko
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바쓰한스요아힘
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인피니언 테크놀로지스 노쓰 아메리카 코포레이션
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020037008825A 2000-12-28 2001-11-14 집적 회로 구조체와 그 마련 공정 Expired - Fee Related KR100542120B1 (ko)

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US09/751,479 2000-12-28
US09/751,479 US6515373B2 (en) 2000-12-28 2000-12-28 Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys
PCT/US2001/043960 WO2002054491A2 (en) 2000-12-28 2001-11-14 Cu-pad/bonded/cu-wire with self-passivating cu-alloys

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US20020084311A1 (en) 2002-07-04
KR20040018248A (ko) 2004-03-02
EP1348235A2 (en) 2003-10-01
JP3737482B2 (ja) 2006-01-18
WO2002054491A2 (en) 2002-07-11
JP2004517498A (ja) 2004-06-10
CN1484857A (zh) 2004-03-24
CN1296997C (zh) 2007-01-24
WO2002054491A3 (en) 2003-06-05
US6515373B2 (en) 2003-02-04

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