JP3737482B2 - 自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ - Google Patents

自己不動態化Ｃｕ合金を用いて接着されたＣｕパッド／Ｃｕワイヤ Download PDF

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JP3737482B2
JP3737482B2 JP2002555483A JP2002555483A JP3737482B2 JP 3737482 B2 JP3737482 B2 JP 3737482B2 JP 2002555483 A JP2002555483 A JP 2002555483A JP 2002555483 A JP2002555483 A JP 2002555483A JP 3737482 B2 JP3737482 B2 JP 3737482B2
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alloy
wire
pad
layer
self
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JP2004517498A5 (enExample
JP2004517498A (ja
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ヨアヒム バース，ハンス
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インフィネオン テクノロジーズ ノース アメリカ コーポレイション
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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PCT/US2001/043960 WO2002054491A2 (en) 2000-12-28 2001-11-14 Cu-pad/bonded/cu-wire with self-passivating cu-alloys

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US6515373B2 (en) 2003-02-04
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EP1348235A2 (en) 2003-10-01
CN1296997C (zh) 2007-01-24
US20020084311A1 (en) 2002-07-04
KR20040018248A (ko) 2004-03-02
WO2002054491A2 (en) 2002-07-11
KR100542120B1 (ko) 2006-01-11
CN1484857A (zh) 2004-03-24

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