CN1296997C - 具自行钝化铜合金之铜垫\接合\铜线 - Google Patents

具自行钝化铜合金之铜垫\接合\铜线 Download PDF

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Publication number
CN1296997C
CN1296997C CNB018216528A CN01821652A CN1296997C CN 1296997 C CN1296997 C CN 1296997C CN B018216528 A CNB018216528 A CN B018216528A CN 01821652 A CN01821652 A CN 01821652A CN 1296997 C CN1296997 C CN 1296997C
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Prior art keywords
copper
alloy
pad
wire
layer
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Expired - Fee Related
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CNB018216528A
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Chinese (zh)
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CN1484857A (zh
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H·-J·巴斯
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Infineon Technologies North America Corp
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Infineon Technologies North America Corp
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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KR100717667B1 (ko) * 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 반도체용 본딩 와이어 및 그 제조 방법
US6970939B2 (en) * 2000-10-26 2005-11-29 Intel Corporation Method and apparatus for large payload distribution in a network
US20030127716A1 (en) * 2002-01-09 2003-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads
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EP1348235A2 (en) 2003-10-01
US20020084311A1 (en) 2002-07-04
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