JP2004349462A5 - - Google Patents

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Publication number
JP2004349462A5
JP2004349462A5 JP2003144670A JP2003144670A JP2004349462A5 JP 2004349462 A5 JP2004349462 A5 JP 2004349462A5 JP 2003144670 A JP2003144670 A JP 2003144670A JP 2003144670 A JP2003144670 A JP 2003144670A JP 2004349462 A5 JP2004349462 A5 JP 2004349462A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003144670A
Other versions
JP4744788B2 (ja
JP2004349462A (ja
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Publication date
Priority claimed from JP2003144670A external-priority patent/JP4744788B2/ja
Priority to JP2003144670A priority Critical patent/JP4744788B2/ja
Application filed filed Critical
Priority to US10/697,316 priority patent/US6924192B2/en
Priority to KR1020030078789A priority patent/KR20040100822A/ko
Publication of JP2004349462A publication Critical patent/JP2004349462A/ja
Priority to US11/165,506 priority patent/US7078759B2/en
Priority to US11/455,666 priority patent/US7439569B2/en
Publication of JP2004349462A5 publication Critical patent/JP2004349462A5/ja
Priority to US12/246,533 priority patent/US7763926B2/en
Publication of JP4744788B2 publication Critical patent/JP4744788B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003144670A 2003-05-22 2003-05-22 半導体装置の製造方法 Expired - Fee Related JP4744788B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003144670A JP4744788B2 (ja) 2003-05-22 2003-05-22 半導体装置の製造方法
US10/697,316 US6924192B2 (en) 2003-05-22 2003-10-31 Semiconductor device manufacturing method and semiconductor device
KR1020030078789A KR20040100822A (ko) 2003-05-22 2003-11-07 반도체 장치의 제조 방법 및 반도체 장치
US11/165,506 US7078759B2 (en) 2003-05-22 2005-06-24 Semiconductor device manufacturing method and semiconductor device
US11/455,666 US7439569B2 (en) 2003-05-22 2006-06-20 Semiconductor device manufacturing method and semiconductor device
US12/246,533 US7763926B2 (en) 2003-05-22 2008-10-07 Semiconductor device manufacturing method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003144670A JP4744788B2 (ja) 2003-05-22 2003-05-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004349462A JP2004349462A (ja) 2004-12-09
JP2004349462A5 true JP2004349462A5 (ja) 2006-06-22
JP4744788B2 JP4744788B2 (ja) 2011-08-10

Family

ID=33447537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003144670A Expired - Fee Related JP4744788B2 (ja) 2003-05-22 2003-05-22 半導体装置の製造方法

Country Status (3)

Country Link
US (4) US6924192B2 (ja)
JP (1) JP4744788B2 (ja)
KR (1) KR20040100822A (ja)

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US7842581B2 (en) * 2003-03-27 2010-11-30 Samsung Electronics Co., Ltd. Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers
KR100505680B1 (ko) * 2003-03-27 2005-08-03 삼성전자주식회사 루테늄층을 갖는 반도체 메모리 소자의 제조방법 및루테늄층제조장치
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US20110143506A1 (en) * 2009-12-10 2011-06-16 Sang-Yun Lee Method for fabricating a semiconductor memory device
KR100604943B1 (ko) * 2005-06-20 2006-07-31 삼성전자주식회사 반도체 소자 및 그 제조방법
US7745865B2 (en) 2005-07-20 2010-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods for preventing capacitor leakage
KR100647468B1 (ko) * 2005-11-04 2006-11-23 삼성전자주식회사 반도체 장치의 배선 구조물 및 그 제조 방법.
JP4828306B2 (ja) * 2006-05-30 2011-11-30 セイコーエプソン株式会社 半導体装置及びその製造方法
KR100791339B1 (ko) * 2006-08-25 2008-01-03 삼성전자주식회사 평탄화 저항 패턴을 포함하는 복합칩 반도체 소자 및 그제조 방법
US8012836B2 (en) * 2006-09-28 2011-09-06 Taiwan Semiconductor Manufacuturing Co., Ltd. Semiconductor devices and methods for fabricating the same
JP2008147594A (ja) 2006-12-13 2008-06-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR20090081119A (ko) * 2008-01-23 2009-07-28 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 및 그의 형성 방법
JP2011049250A (ja) * 2009-08-25 2011-03-10 Renesas Electronics Corp 半導体装置およびその製造方法
US8617949B2 (en) * 2009-11-13 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor and method for making same
US8587046B2 (en) * 2010-07-30 2013-11-19 Mosys, Inc. System with logic and embedded MIM capacitor
KR101661305B1 (ko) 2010-08-13 2016-09-30 삼성전자 주식회사 커패시터를 포함하는 반도체 메모리 소자 및 그 제조방법
US20120161215A1 (en) 2010-12-22 2012-06-28 Nick Lindert Rectangular capacitors for dynamic random access memory (dram) and dual-pass lithography methods to form the same
US8598562B2 (en) 2011-07-01 2013-12-03 Micron Technology, Inc. Memory cell structures
US9252204B2 (en) * 2011-09-15 2016-02-02 GlobalFoundries, Inc. Metal insulator metal (MIM) capacitor structure
JP5731341B2 (ja) * 2011-09-26 2015-06-10 ルネサスエレクトロニクス株式会社 半導体記憶装置、半導体装置及び半導体記憶装置の製造方法
US9355910B2 (en) * 2011-12-13 2016-05-31 GlobalFoundries, Inc. Semiconductor device with transistor local interconnects
JP2015211108A (ja) * 2014-04-25 2015-11-24 ルネサスエレクトロニクス株式会社 半導体装置
US20170069649A1 (en) * 2015-09-04 2017-03-09 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
CN109755180B (zh) * 2017-11-07 2021-01-12 华邦电子股份有限公司 半导体结构的制造方法
CN110875316B (zh) * 2018-08-31 2023-08-08 华邦电子股份有限公司 存储器装置及其制造方法
US11462463B2 (en) * 2018-09-27 2022-10-04 Intel Corporation Microelectronic assemblies having an integrated voltage regulator chiplet
KR20200130945A (ko) * 2019-05-13 2020-11-23 삼성전자주식회사 랜딩 패드를 갖는 반도체 소자
CN113571521B (zh) * 2021-07-26 2023-09-26 长鑫存储技术有限公司 位线结构、半导体结构及位线结构的制作方法

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JPH08204141A (ja) * 1995-01-23 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
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JPH10242422A (ja) * 1997-02-28 1998-09-11 Toshiba Corp 半導体記憶装置およびその製造方法
JPH11126881A (ja) * 1997-10-23 1999-05-11 Hitachi Ltd 高強誘電体薄膜コンデンサを有する半導体装置及びその製造方法
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US6455370B1 (en) 2000-08-16 2002-09-24 Micron Technology, Inc. Method of patterning noble metals for semiconductor devices by electropolishing
US6528366B1 (en) * 2001-03-01 2003-03-04 Taiwan Semiconductor Manufacturing Company Fabrication methods of vertical metal-insulator-metal (MIM) capacitor for advanced embedded DRAM applications
JP4543357B2 (ja) * 2001-01-19 2010-09-15 エルピーダメモリ株式会社 半導体装置の製造方法
JP4575616B2 (ja) * 2001-04-26 2010-11-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2003007850A (ja) * 2001-06-18 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4911838B2 (ja) * 2001-07-06 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2003060080A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
US6797557B2 (en) * 2001-10-11 2004-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and systems for forming embedded DRAM for an MIM capacitor
US6656786B2 (en) * 2001-11-02 2003-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. MIM process for logic-based embedded RAM having front end manufacturing operation
KR100415537B1 (ko) * 2001-11-03 2004-01-24 주식회사 하이닉스반도체 반도체 소자 제조 방법

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