JP2004214459A - 不揮発性磁気メモリ装置及びその製造方法 - Google Patents

不揮発性磁気メモリ装置及びその製造方法 Download PDF

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Publication number
JP2004214459A
JP2004214459A JP2003000486A JP2003000486A JP2004214459A JP 2004214459 A JP2004214459 A JP 2004214459A JP 2003000486 A JP2003000486 A JP 2003000486A JP 2003000486 A JP2003000486 A JP 2003000486A JP 2004214459 A JP2004214459 A JP 2004214459A
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JP
Japan
Prior art keywords
layer
interlayer insulating
insulating layer
forming
connection hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2003000486A
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English (en)
Japanese (ja)
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JP2004214459A5 (enExample
Inventor
Makoto Motoyoshi
真 元吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2003000486A priority Critical patent/JP2004214459A/ja
Priority to TW092135571A priority patent/TWI239008B/zh
Priority to US10/750,263 priority patent/US6982446B2/en
Publication of JP2004214459A publication Critical patent/JP2004214459A/ja
Publication of JP2004214459A5 publication Critical patent/JP2004214459A5/ja
Priority to US11/237,138 priority patent/US7271010B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2003000486A 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法 Abandoned JP2004214459A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003000486A JP2004214459A (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法
TW092135571A TWI239008B (en) 2003-01-06 2003-12-16 Non-volatile magnetic memory and manufacturing method thereof
US10/750,263 US6982446B2 (en) 2003-01-06 2003-12-31 Nonvolatile magnetic memory device and manufacturing method thereof
US11/237,138 US7271010B2 (en) 2003-01-06 2005-09-28 Nonvolatile magnetic memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003000486A JP2004214459A (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004214459A true JP2004214459A (ja) 2004-07-29
JP2004214459A5 JP2004214459A5 (enExample) 2005-03-17

Family

ID=32818781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003000486A Abandoned JP2004214459A (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法

Country Status (3)

Country Link
US (2) US6982446B2 (enExample)
JP (1) JP2004214459A (enExample)
TW (1) TWI239008B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086322A (ja) * 2004-09-16 2006-03-30 Renesas Technology Corp 磁気抵抗記憶素子およびその製造方法
JP2006165031A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd トンネル接合素子の製造方法およびその製造装置
WO2006070803A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation 磁気ランダムアクセスメモリ及びその製造方法
KR100626390B1 (ko) 2005-02-07 2006-09-20 삼성전자주식회사 자기 메모리 소자 및 그 형성 방법
KR100761541B1 (ko) * 2004-12-31 2007-09-27 매그나칩 반도체 유한회사 압력 센서의 제조 방법
JP2008512875A (ja) * 2004-09-09 2008-04-24 ティーガル コーポレイション ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法
JP2012160671A (ja) * 2011-02-02 2012-08-23 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
JP2014090109A (ja) * 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 磁気抵抗素子の製造方法
US8941197B2 (en) 2007-02-27 2015-01-27 Kabushiki Kaisha Toshiba Magnetic random access memory
JP2017157874A (ja) * 2017-06-19 2017-09-07 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4567963B2 (ja) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100657897B1 (ko) * 2004-08-21 2006-12-14 삼성전자주식회사 전압 제어층을 포함하는 메모리 소자
KR100719345B1 (ko) * 2005-04-18 2007-05-17 삼성전자주식회사 자기 기억 장치의 형성 방법
DE102005047482A1 (de) * 2005-10-04 2007-04-12 Infineon Technologies Ag Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP4384196B2 (ja) * 2007-03-26 2009-12-16 株式会社東芝 スピンｆｅｔ、磁気抵抗効果素子及びスピンメモリ
US7939188B2 (en) * 2008-10-27 2011-05-10 Seagate Technology Llc Magnetic stack design
US9041146B2 (en) * 2013-03-15 2015-05-26 Intel Corporation Logic chip including embedded magnetic tunnel junctions
CN108320769A (zh) 2013-03-15 2018-07-24 英特尔公司 包括嵌入式磁性隧道结的逻辑芯片
US9373663B2 (en) * 2013-09-20 2016-06-21 Avalanche Technology, Inc. Landing pad in peripheral circuit for magnetic random access memory (MRAM)
US10495771B2 (en) * 2015-10-27 2019-12-03 Schlumberger Technology Corporation Method and system for processing dipole anisotropy
CN113903764B (zh) * 2020-07-07 2025-08-19 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294743A (ja) 1999-04-01 2000-10-20 Matsushita Electronics Industry Corp 強誘電体メモリ装置
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP2001298161A (ja) 2000-04-12 2001-10-26 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
US6587370B2 (en) * 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
JP2002334574A (ja) 2001-05-02 2002-11-22 Canon Inc 不揮発性メモリの駆動方法及び不揮発性メモリ
KR100442959B1 (ko) * 2001-05-22 2004-08-04 주식회사 하이닉스반도체 마그네틱 램 및 그 형성방법
KR100403313B1 (ko) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법
US7262064B2 (en) * 2001-10-12 2007-08-28 Sony Corporation Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
KR100457159B1 (ko) * 2001-12-26 2004-11-16 주식회사 하이닉스반도체 마그네틱 램
JP2004119478A (ja) * 2002-09-24 2004-04-15 Renesas Technology Corp 半導体記憶装置、不揮発性記憶装置および磁気記憶装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008512875A (ja) * 2004-09-09 2008-04-24 ティーガル コーポレイション ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法
JP2006086322A (ja) * 2004-09-16 2006-03-30 Renesas Technology Corp 磁気抵抗記憶素子およびその製造方法
JP2006165031A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd トンネル接合素子の製造方法およびその製造装置
JPWO2006070803A1 (ja) * 2004-12-28 2008-06-12 日本電気株式会社 磁気ランダムアクセスメモリ及びその製造方法
WO2006070803A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation 磁気ランダムアクセスメモリ及びその製造方法
KR100761541B1 (ko) * 2004-12-31 2007-09-27 매그나칩 반도체 유한회사 압력 센서의 제조 방법
KR100626390B1 (ko) 2005-02-07 2006-09-20 삼성전자주식회사 자기 메모리 소자 및 그 형성 방법
US7645619B2 (en) 2005-02-07 2010-01-12 Samsung Electronics Co., Ltd. Magnetic random access memory device and method of forming the same
US8941197B2 (en) 2007-02-27 2015-01-27 Kabushiki Kaisha Toshiba Magnetic random access memory
US9263666B2 (en) 2007-02-27 2016-02-16 Kabushiki Kaisha Toshiba Magnetic random access memory
JP2012160671A (ja) * 2011-02-02 2012-08-23 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US9076720B2 (en) 2011-02-02 2015-07-07 Kabushiki Kaisha Toshiba Magnetic random access memory and a method of fabricating the same
JP2014090109A (ja) * 2012-10-31 2014-05-15 Hitachi High-Technologies Corp 磁気抵抗素子の製造方法
JP2017157874A (ja) * 2017-06-19 2017-09-07 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子

Also Published As

Publication number Publication date
US6982446B2 (en) 2006-01-03
TW200426840A (en) 2004-12-01
US7271010B2 (en) 2007-09-18
TWI239008B (en) 2005-09-01
US20060023561A1 (en) 2006-02-02
US20040157427A1 (en) 2004-08-12

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