TWI239008B - Non-volatile magnetic memory and manufacturing method thereof - Google Patents
Non-volatile magnetic memory and manufacturing method thereof Download PDFInfo
- Publication number
- TWI239008B TWI239008B TW092135571A TW92135571A TWI239008B TW I239008 B TWI239008 B TW I239008B TW 092135571 A TW092135571 A TW 092135571A TW 92135571 A TW92135571 A TW 92135571A TW I239008 B TWI239008 B TW I239008B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- interlayer insulating
- ferromagnetic
- connection hole
- insulating layer
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 74
- 230000015654 memory Effects 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims abstract description 648
- 239000011229 interlayer Substances 0.000 claims abstract description 177
- 238000009413 insulation Methods 0.000 claims abstract description 47
- 230000005294 ferromagnetic effect Effects 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 118
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 66
- 239000004020 conductor Substances 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 7
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000010408 film Substances 0.000 description 104
- 230000005415 magnetization Effects 0.000 description 71
- 230000005290 antiferromagnetic effect Effects 0.000 description 62
- 230000004888 barrier function Effects 0.000 description 32
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000001459 lithography Methods 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000004380 ashing Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- -1 nitride nitride Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 1
- 244000284380 Hibiscus rosa sinensis Species 0.000 description 1
- 235000021534 Mangelwurzel Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- SAUMVKNLVQDHMJ-UHFFFAOYSA-N dichlorine trioxide Inorganic materials ClOCl(=O)=O SAUMVKNLVQDHMJ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 235000012245 magnesium oxide Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical class [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- QFZNJQRBWNCZFJ-UHFFFAOYSA-N titanium tungsten Chemical compound [W][Ti][W] QFZNJQRBWNCZFJ-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 230000003936 working memory Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003000486A JP2004214459A (ja) | 2003-01-06 | 2003-01-06 | 不揮発性磁気メモリ装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200426840A TW200426840A (en) | 2004-12-01 |
| TWI239008B true TWI239008B (en) | 2005-09-01 |
Family
ID=32818781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092135571A TWI239008B (en) | 2003-01-06 | 2003-12-16 | Non-volatile magnetic memory and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6982446B2 (enExample) |
| JP (1) | JP2004214459A (enExample) |
| TW (1) | TWI239008B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4567963B2 (ja) * | 2003-12-05 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| KR100657897B1 (ko) * | 2004-08-21 | 2006-12-14 | 삼성전자주식회사 | 전압 제어층을 포함하는 메모리 소자 |
| US7169623B2 (en) * | 2004-09-09 | 2007-01-30 | Tegal Corporation | System and method for processing a wafer including stop-on-aluminum processing |
| JP2006086322A (ja) * | 2004-09-16 | 2006-03-30 | Renesas Technology Corp | 磁気抵抗記憶素子およびその製造方法 |
| JP2006165031A (ja) * | 2004-12-02 | 2006-06-22 | Ulvac Japan Ltd | トンネル接合素子の製造方法およびその製造装置 |
| JPWO2006070803A1 (ja) * | 2004-12-28 | 2008-06-12 | 日本電気株式会社 | 磁気ランダムアクセスメモリ及びその製造方法 |
| KR100761541B1 (ko) * | 2004-12-31 | 2007-09-27 | 매그나칩 반도체 유한회사 | 압력 센서의 제조 방법 |
| KR100626390B1 (ko) | 2005-02-07 | 2006-09-20 | 삼성전자주식회사 | 자기 메모리 소자 및 그 형성 방법 |
| KR100719345B1 (ko) * | 2005-04-18 | 2007-05-17 | 삼성전자주식회사 | 자기 기억 장치의 형성 방법 |
| DE102005047482A1 (de) * | 2005-10-04 | 2007-04-12 | Infineon Technologies Ag | Magnetoresistives Sensormodul und Verfahren zum Herstellen desselben |
| US7608538B2 (en) * | 2007-01-05 | 2009-10-27 | International Business Machines Corporation | Formation of vertical devices by electroplating |
| JP2008211057A (ja) | 2007-02-27 | 2008-09-11 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JP4384196B2 (ja) * | 2007-03-26 | 2009-12-16 | 株式会社東芝 | スピンｆｅｔ、磁気抵抗効果素子及びスピンメモリ |
| US7939188B2 (en) * | 2008-10-27 | 2011-05-10 | Seagate Technology Llc | Magnetic stack design |
| JP2012160671A (ja) * | 2011-02-02 | 2012-08-23 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
| JP2014090109A (ja) * | 2012-10-31 | 2014-05-15 | Hitachi High-Technologies Corp | 磁気抵抗素子の製造方法 |
| WO2014142978A1 (en) * | 2013-03-15 | 2014-09-18 | Intel Corporation | Logic chip including embedded magnetic tunnel junctions |
| KR20220051412A (ko) | 2013-03-15 | 2022-04-26 | 인텔 코포레이션 | 내장된 자기 터널 접합을 포함하는 로직 칩 |
| US9373663B2 (en) * | 2013-09-20 | 2016-06-21 | Avalanche Technology, Inc. | Landing pad in peripheral circuit for magnetic random access memory (MRAM) |
| US10495771B2 (en) * | 2015-10-27 | 2019-12-03 | Schlumberger Technology Corporation | Method and system for processing dipole anisotropy |
| JP6616803B2 (ja) * | 2017-06-19 | 2019-12-04 | 株式会社日立ハイテクノロジーズ | 磁気抵抗素子の製造方法、及び磁気抵抗素子 |
| CN113903764B (zh) * | 2020-07-07 | 2025-08-19 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000294743A (ja) | 1999-04-01 | 2000-10-20 | Matsushita Electronics Industry Corp | 強誘電体メモリ装置 |
| US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
| US6473336B2 (en) * | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
| JP2001298161A (ja) | 2000-04-12 | 2001-10-26 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP4309075B2 (ja) * | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
| US6587370B2 (en) * | 2000-11-01 | 2003-07-01 | Canon Kabushiki Kaisha | Magnetic memory and information recording and reproducing method therefor |
| JP2002334574A (ja) | 2001-05-02 | 2002-11-22 | Canon Inc | 不揮発性メモリの駆動方法及び不揮発性メモリ |
| KR100403313B1 (ko) * | 2001-05-22 | 2003-10-30 | 주식회사 하이닉스반도체 | 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법 |
| KR100442959B1 (ko) * | 2001-05-22 | 2004-08-04 | 주식회사 하이닉스반도체 | 마그네틱 램 및 그 형성방법 |
| EP1580821B1 (en) * | 2001-10-12 | 2015-12-09 | Sony Corporation | Magnetoresistance effect element, magnetic memory element, magnetic memory device, and their manufacturing method |
| KR100457159B1 (ko) * | 2001-12-26 | 2004-11-16 | 주식회사 하이닉스반도체 | 마그네틱 램 |
| JP2004119478A (ja) * | 2002-09-24 | 2004-04-15 | Renesas Technology Corp | 半導体記憶装置、不揮発性記憶装置および磁気記憶装置 |
-
2003
- 2003-01-06 JP JP2003000486A patent/JP2004214459A/ja not_active Abandoned
- 2003-12-16 TW TW092135571A patent/TWI239008B/zh not_active IP Right Cessation
- 2003-12-31 US US10/750,263 patent/US6982446B2/en not_active Expired - Fee Related
-
2005
- 2005-09-28 US US11/237,138 patent/US7271010B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200426840A (en) | 2004-12-01 |
| US6982446B2 (en) | 2006-01-03 |
| US20060023561A1 (en) | 2006-02-02 |
| US7271010B2 (en) | 2007-09-18 |
| JP2004214459A (ja) | 2004-07-29 |
| US20040157427A1 (en) | 2004-08-12 |
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