JP2003527355A5 - - Google Patents
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- Publication number
- JP2003527355A5 JP2003527355A5 JP2001562263A JP2001562263A JP2003527355A5 JP 2003527355 A5 JP2003527355 A5 JP 2003527355A5 JP 2001562263 A JP2001562263 A JP 2001562263A JP 2001562263 A JP2001562263 A JP 2001562263A JP 2003527355 A5 JP2003527355 A5 JP 2003527355A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- acid generator
- photoresist
- photoresist composition
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 42
- 239000002253 acid Substances 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 125000001424 substituent group Chemical group 0.000 description 13
- 239000011247 coating layer Substances 0.000 description 12
- 125000002723 alicyclic group Chemical group 0.000 description 11
- -1 tetrahydrofurfuryl Chemical group 0.000 description 11
- 125000001624 naphthyl group Chemical group 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 10
- 125000001544 thienyl group Chemical group 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 125000004414 alkyl thio group Chemical group 0.000 description 6
- 125000003710 aryl alkyl group Chemical group 0.000 description 6
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 6
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 6
- 125000002541 furyl group Chemical group 0.000 description 6
- 125000001072 heteroaryl group Chemical group 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 125000002971 oxazolyl group Chemical group 0.000 description 6
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 6
- 125000005415 substituted alkoxy group Chemical group 0.000 description 6
- 125000000547 substituted alkyl group Chemical group 0.000 description 6
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 5
- 125000004644 alkyl sulfinyl group Chemical group 0.000 description 4
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 4
- 125000000332 coumarinyl group Chemical group O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 4
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 4
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 125000000335 thiazolyl group Chemical group 0.000 description 4
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001174 sulfone group Chemical group 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18571700P | 2000-02-27 | 2000-02-27 | |
| US60/185,717 | 2000-02-27 | ||
| PCT/US2001/006284 WO2001063363A2 (en) | 2000-02-27 | 2001-02-27 | Photoacid generators and photoresists comprising same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003527355A JP2003527355A (ja) | 2003-09-16 |
| JP2003527355A5 true JP2003527355A5 (enExample) | 2008-03-13 |
| JP4991074B2 JP4991074B2 (ja) | 2012-08-01 |
Family
ID=22682185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001562263A Expired - Lifetime JP4991074B2 (ja) | 2000-02-27 | 2001-02-27 | 光反応性酸発生剤およびそれを含有してなるフォトレジスト |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6783912B2 (enExample) |
| JP (1) | JP4991074B2 (enExample) |
| AU (1) | AU2001238706A1 (enExample) |
| WO (1) | WO2001063363A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326518B2 (en) * | 2004-11-24 | 2008-02-05 | Rohm And Haas Electronic Materials Llc | Photoresist compositions |
| KR100676885B1 (ko) * | 2004-12-02 | 2007-02-23 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
| KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
| JP4979621B2 (ja) * | 2008-03-12 | 2012-07-18 | 株式会社トクヤマ | 含硫黄重合性アダマンタン化合物 |
| KR101855112B1 (ko) | 2009-06-22 | 2018-05-04 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 광산 발생제 및 이를 포함하는 포토레지스트 |
| JP5851688B2 (ja) | 2009-12-31 | 2016-02-03 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 感光性組成物 |
| KR101813298B1 (ko) | 2010-02-24 | 2017-12-28 | 바스프 에스이 | 잠재성 산 및 그의 용도 |
| JP5782283B2 (ja) | 2010-03-31 | 2015-09-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 新規のポリマーおよびフォトレジスト組成物 |
| CN107207456B (zh) | 2015-02-02 | 2021-05-04 | 巴斯夫欧洲公司 | 潜酸及其用途 |
| EP3847506A1 (en) | 2018-09-05 | 2021-07-14 | Merck Patent GmbH | Positive working photosensitive material |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1231789A (enExample) * | 1967-09-05 | 1971-05-12 | ||
| DE3804316A1 (de) * | 1988-02-12 | 1989-08-24 | Merck Patent Gmbh | Verfahren zur herstellung von 1,2-disulfon-verbindungen |
| JPH02106751A (ja) * | 1988-10-14 | 1990-04-18 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
| DE3930086A1 (de) * | 1989-09-09 | 1991-03-21 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
| JPH03223863A (ja) * | 1990-01-30 | 1991-10-02 | Wako Pure Chem Ind Ltd | レジスト材料 |
| JP2500533B2 (ja) * | 1990-01-30 | 1996-05-29 | 和光純薬工業株式会社 | 新規なジアゾジスルホン化合物 |
| EP0440374B1 (en) * | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| JP3024621B2 (ja) * | 1990-01-30 | 2000-03-21 | 和光純薬工業株式会社 | レジスト材料用酸発生剤 |
| JP3392546B2 (ja) * | 1994-11-16 | 2003-03-31 | 株式会社東芝 | パターン形成方法 |
| US5585220A (en) * | 1995-12-01 | 1996-12-17 | International Business Machines Corporation | Resist composition with radiation sensitive acid generator |
| DE69612182T3 (de) * | 1996-02-09 | 2005-08-04 | Wako Pure Chemical Industries, Ltd. | Polymer und Resistmaterial |
| JP3677952B2 (ja) * | 1996-07-18 | 2005-08-03 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP3919887B2 (ja) * | 1996-07-24 | 2007-05-30 | 東京応化工業株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP3816638B2 (ja) * | 1996-07-24 | 2006-08-30 | 東京応化工業株式会社 | 化学増幅型レジスト組成物 |
| US5945517A (en) * | 1996-07-24 | 1999-08-31 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization photoresist composition |
| JP3865473B2 (ja) * | 1997-07-24 | 2007-01-10 | 東京応化工業株式会社 | 新規なジアゾメタン化合物 |
| JP3854689B2 (ja) * | 1997-07-24 | 2006-12-06 | 東京応化工業株式会社 | 新規な光酸発生剤 |
| JPH10171112A (ja) * | 1996-12-11 | 1998-06-26 | Mitsubishi Chem Corp | ポジ型感光性組成物 |
| JP4097782B2 (ja) * | 1997-05-07 | 2008-06-11 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 感放射線性組成物 |
| JP3966430B2 (ja) * | 1997-07-15 | 2007-08-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 感放射線性組成物 |
| US6136502A (en) * | 1997-10-08 | 2000-10-24 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US6057083A (en) * | 1997-11-04 | 2000-05-02 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| JP3998105B2 (ja) * | 1998-02-04 | 2007-10-24 | 東京応化工業株式会社 | 化学増幅型ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4062713B2 (ja) * | 1998-03-02 | 2008-03-19 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| JPH11352693A (ja) * | 1998-06-08 | 1999-12-24 | Nippon Zeon Co Ltd | レジスト組成物およびレジストパターンの形成方法 |
| JP3972469B2 (ja) * | 1998-06-12 | 2007-09-05 | Ｊｓｒ株式会社 | ジアゾジスルホン化合物および感放射線性樹脂組成物 |
| JP2000171967A (ja) * | 1998-09-28 | 2000-06-23 | Mitsubishi Chemicals Corp | 感放射線性組成物 |
| JP2001042530A (ja) * | 1999-07-12 | 2001-02-16 | Shipley Co Llc | ポジ型感放射線性樹脂組成物 |
| JP3969909B2 (ja) * | 1999-09-27 | 2007-09-05 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JP4247592B2 (ja) * | 2000-07-13 | 2009-04-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
-
2001
- 2001-02-27 US US09/795,661 patent/US6783912B2/en not_active Expired - Lifetime
- 2001-02-27 JP JP2001562263A patent/JP4991074B2/ja not_active Expired - Lifetime
- 2001-02-27 WO PCT/US2001/006284 patent/WO2001063363A2/en not_active Ceased
- 2001-02-27 AU AU2001238706A patent/AU2001238706A1/en not_active Abandoned
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