JP2003503851A - 分離トンネル窓を有する不揮発性半導体メモリセルの製造方法 - Google Patents
分離トンネル窓を有する不揮発性半導体メモリセルの製造方法Info
- Publication number
- JP2003503851A JP2003503851A JP2001506603A JP2001506603A JP2003503851A JP 2003503851 A JP2003503851 A JP 2003503851A JP 2001506603 A JP2001506603 A JP 2001506603A JP 2001506603 A JP2001506603 A JP 2001506603A JP 2003503851 A JP2003503851 A JP 2003503851A
- Authority
- JP
- Japan
- Prior art keywords
- tunnel
- layer
- region
- cell
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000002955 isolation Methods 0.000 title description 7
- 210000004027 cell Anatomy 0.000 claims abstract description 88
- 210000004725 window cell Anatomy 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000002513 implantation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 239000007943 implant Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19929618A DE19929618B4 (de) | 1999-06-28 | 1999-06-28 | Verfahren zur Herstellung einer nichtflüchtigen Halbleiter-Speicherzelle mit separatem Tunnelfenster |
DE19929618.9 | 1999-06-28 | ||
PCT/DE2000/001769 WO2001001476A1 (de) | 1999-06-28 | 2000-05-30 | Vefahren zur herstellung einer nichtflüchtigen halbleiter-speicherzelle mit separatem tunnelfenster |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006197022A Division JP2006319362A (ja) | 1999-06-28 | 2006-07-19 | 分離トンネル窓を有する不揮発性半導体メモリセルの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003503851A true JP2003503851A (ja) | 2003-01-28 |
Family
ID=7912849
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001506603A Withdrawn JP2003503851A (ja) | 1999-06-28 | 2000-05-30 | 分離トンネル窓を有する不揮発性半導体メモリセルの製造方法 |
JP2006197022A Pending JP2006319362A (ja) | 1999-06-28 | 2006-07-19 | 分離トンネル窓を有する不揮発性半導体メモリセルの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006197022A Pending JP2006319362A (ja) | 1999-06-28 | 2006-07-19 | 分離トンネル窓を有する不揮発性半導体メモリセルの製造方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6645812B2 (un) |
EP (1) | EP1192652A1 (un) |
JP (2) | JP2003503851A (un) |
KR (1) | KR100447962B1 (un) |
CN (1) | CN1171293C (un) |
BR (1) | BR0011998A (un) |
DE (1) | DE19929618B4 (un) |
MX (1) | MXPA01013170A (un) |
RU (1) | RU2225055C2 (un) |
UA (1) | UA73508C2 (un) |
WO (1) | WO2001001476A1 (un) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303123A (ja) * | 2004-04-14 | 2005-10-27 | Fujitsu Ltd | 半導体装置とその製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10235072A1 (de) * | 2002-07-31 | 2004-02-26 | Micronas Gmbh | EEPROM-Struktur für Halbleiterspeicher |
JP4393106B2 (ja) * | 2003-05-14 | 2010-01-06 | シャープ株式会社 | 表示用駆動装置及び表示装置、並びに携帯電子機器 |
CN113054001B (zh) * | 2021-03-16 | 2021-11-09 | 中国电子科技集团公司第五十八研究所 | 可编程的电源开关器件及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57112078A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of electrically rewritable fixed memory |
US4477825A (en) * | 1981-12-28 | 1984-10-16 | National Semiconductor Corporation | Electrically programmable and erasable memory cell |
US4608585A (en) * | 1982-07-30 | 1986-08-26 | Signetics Corporation | Electrically erasable PROM cell |
JPS6325980A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法 |
JPS6384168A (ja) * | 1986-09-29 | 1988-04-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2792028B2 (ja) * | 1988-03-07 | 1998-08-27 | 株式会社デンソー | 半導体記憶装置およびその製造方法 |
JP2784765B2 (ja) * | 1988-03-11 | 1998-08-06 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリの製造方法 |
JPH0334579A (ja) * | 1989-06-30 | 1991-02-14 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5565371A (en) * | 1990-04-12 | 1996-10-15 | Texas Instruments Incorporated | Method of making EPROM with separate erasing and programming regions |
US5371031A (en) * | 1990-08-01 | 1994-12-06 | Texas Instruments Incorporated | Method of making EEPROM array with buried N+ windows and with separate erasing and programming regions |
JP3222705B2 (ja) * | 1993-11-30 | 2001-10-29 | 東芝マイクロエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
KR0147452B1 (ko) * | 1993-11-30 | 1998-08-01 | 사토 후미오 | 불휘발성 반도체기억장치 |
US5793081A (en) * | 1994-03-25 | 1998-08-11 | Nippon Steel Corporation | Nonvolatile semiconductor storage device and method of manufacturing |
US5633186A (en) * | 1995-08-14 | 1997-05-27 | Motorola, Inc. | Process for fabricating a non-volatile memory cell in a semiconductor device |
EP0782196A1 (en) * | 1995-12-28 | 1997-07-02 | STMicroelectronics S.r.l. | Method of fabricating EEPROM memory devices and EEPROM memory device so formed |
TW437099B (en) * | 1997-09-26 | 2001-05-28 | Matsushita Electronics Corp | Non-volatile semiconductor memory device and the manufacturing method thereof |
-
1999
- 1999-06-28 DE DE19929618A patent/DE19929618B4/de not_active Expired - Lifetime
-
2000
- 2000-05-30 RU RU2002101921/28A patent/RU2225055C2/ru not_active IP Right Cessation
- 2000-05-30 MX MXPA01013170A patent/MXPA01013170A/es active IP Right Grant
- 2000-05-30 BR BR0011998-9A patent/BR0011998A/pt not_active IP Right Cessation
- 2000-05-30 EP EP00943661A patent/EP1192652A1/de not_active Withdrawn
- 2000-05-30 WO PCT/DE2000/001769 patent/WO2001001476A1/de active IP Right Grant
- 2000-05-30 UA UA2001129149A patent/UA73508C2/uk unknown
- 2000-05-30 KR KR10-2001-7016646A patent/KR100447962B1/ko active IP Right Grant
- 2000-05-30 CN CNB008095698A patent/CN1171293C/zh not_active Expired - Fee Related
- 2000-05-30 JP JP2001506603A patent/JP2003503851A/ja not_active Withdrawn
-
2001
- 2001-12-28 US US10/033,949 patent/US6645812B2/en not_active Expired - Lifetime
-
2006
- 2006-07-19 JP JP2006197022A patent/JP2006319362A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303123A (ja) * | 2004-04-14 | 2005-10-27 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4497290B2 (ja) * | 2004-04-14 | 2010-07-07 | 富士通株式会社 | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1171293C (zh) | 2004-10-13 |
US6645812B2 (en) | 2003-11-11 |
EP1192652A1 (de) | 2002-04-03 |
BR0011998A (pt) | 2002-03-05 |
KR100447962B1 (ko) | 2004-09-08 |
MXPA01013170A (es) | 2002-08-12 |
CN1361924A (zh) | 2002-07-31 |
DE19929618A1 (de) | 2001-01-11 |
US20020119626A1 (en) | 2002-08-29 |
WO2001001476A1 (de) | 2001-01-04 |
UA73508C2 (en) | 2005-08-15 |
KR20020019472A (ko) | 2002-03-12 |
JP2006319362A (ja) | 2006-11-24 |
RU2225055C2 (ru) | 2004-02-27 |
DE19929618B4 (de) | 2006-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060127 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060322 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060719 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20060731 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20061027 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080919 |