JP2003273571A - 素子間干渉電波シールド型高周波モジュール - Google Patents

素子間干渉電波シールド型高周波モジュール

Info

Publication number
JP2003273571A
JP2003273571A JP2002074253A JP2002074253A JP2003273571A JP 2003273571 A JP2003273571 A JP 2003273571A JP 2002074253 A JP2002074253 A JP 2002074253A JP 2002074253 A JP2002074253 A JP 2002074253A JP 2003273571 A JP2003273571 A JP 2003273571A
Authority
JP
Japan
Prior art keywords
frequency module
high frequency
resin
radio wave
inter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002074253A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003273571A5 (enrdf_load_stackoverflow
Inventor
Shinya Iijima
真也 飯島
Yasuo Yamagishi
康男 山岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2002074253A priority Critical patent/JP2003273571A/ja
Publication of JP2003273571A publication Critical patent/JP2003273571A/ja
Publication of JP2003273571A5 publication Critical patent/JP2003273571A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
JP2002074253A 2002-03-18 2002-03-18 素子間干渉電波シールド型高周波モジュール Pending JP2003273571A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002074253A JP2003273571A (ja) 2002-03-18 2002-03-18 素子間干渉電波シールド型高周波モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002074253A JP2003273571A (ja) 2002-03-18 2002-03-18 素子間干渉電波シールド型高周波モジュール

Publications (2)

Publication Number Publication Date
JP2003273571A true JP2003273571A (ja) 2003-09-26
JP2003273571A5 JP2003273571A5 (enrdf_load_stackoverflow) 2005-09-08

Family

ID=29203700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002074253A Pending JP2003273571A (ja) 2002-03-18 2002-03-18 素子間干渉電波シールド型高周波モジュール

Country Status (1)

Country Link
JP (1) JP2003273571A (enrdf_load_stackoverflow)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351737A (ja) * 2005-06-15 2006-12-28 Hitachi Ltd 半導体パワーモジュール
EP1684341A3 (de) * 2005-01-21 2007-01-10 Robert Bosch Gmbh Elektrische Schaltung und Verfahren zur Herstellung einer elektrischen Schaltung
JP2009508339A (ja) * 2005-09-15 2009-02-26 スマートラック アイピー ビー.ヴィー. チップモジュール及びその形成方法
JP2010177520A (ja) * 2009-01-30 2010-08-12 Toshiba Corp 電子回路モジュールおよびその製造方法
CN102074516A (zh) * 2009-11-19 2011-05-25 日月光半导体制造股份有限公司 半导体元件封装及其制作方法
US7989928B2 (en) 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
US8022511B2 (en) 2008-02-05 2011-09-20 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8110902B2 (en) 2009-02-19 2012-02-07 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8212340B2 (en) 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8212339B2 (en) 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
JP2012248848A (ja) * 2011-05-30 2012-12-13 Samsung Electronics Co Ltd 半導体素子、半導体パッケージ、及び電子装置
US8350367B2 (en) 2008-02-05 2013-01-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8368185B2 (en) 2009-11-19 2013-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8378466B2 (en) 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
US8410584B2 (en) 2008-08-08 2013-04-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8592958B2 (en) 2008-10-31 2013-11-26 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
WO2014027673A1 (ja) * 2012-08-16 2014-02-20 住友ベークライト株式会社 電磁波シールド用フィルム、および電子部品の被覆方法
US8704341B2 (en) 2012-05-15 2014-04-22 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal dissipation structures and EMI shielding
JP2014516212A (ja) * 2011-06-09 2014-07-07 アップル インコーポレイテッド 基板上の構成部品を遮蔽するための電磁遮蔽構造
US8884424B2 (en) 2010-01-13 2014-11-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
JP2014236100A (ja) * 2013-05-31 2014-12-15 住友電気工業株式会社 半導体装置、及び電子装置
US9070793B2 (en) 2010-08-02 2015-06-30 Advanced Semiconductor Engineering, Inc. Semiconductor device packages having electromagnetic interference shielding and related methods
JP2016092275A (ja) * 2014-11-07 2016-05-23 信越化学工業株式会社 電磁波シールド性支持基材付封止材及び封止後半導体素子搭載基板、封止後半導体素子形成ウエハ並びに半導体装置
US9349611B2 (en) 2010-03-22 2016-05-24 Advanced Semiconductor Engineering, Inc. Stackable semiconductor package and manufacturing method thereof
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
US9627327B2 (en) 2014-10-06 2017-04-18 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
WO2018008657A1 (ja) * 2016-07-08 2018-01-11 住友ベークライト株式会社 封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板
US9929078B2 (en) 2016-01-14 2018-03-27 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method for manufacturing the same
US10373917B2 (en) 2017-12-05 2019-08-06 Tdk Corporation Electronic circuit package using conductive sealing material
CN111799230A (zh) * 2019-04-01 2020-10-20 三星电子株式会社 半导体封装件
CN114171501A (zh) * 2020-09-10 2022-03-11 中芯集成电路(宁波)有限公司上海分公司 一种射频半导体器件结构及其制造方法
JP2024000949A (ja) * 2022-06-17 2024-01-09 東洋インキScホールディングス株式会社 導電性シート、電子部品及びその製造方法
WO2024053138A1 (ja) * 2022-09-06 2024-03-14 Towa株式会社 シート材の位置決め装置、位置決め方法、及び電子部品に対するシールド層の形成方法

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142001A (en) * 1978-04-27 1979-11-05 Tdk Corp Forming metod of microwave reflection preventing layer
JPS60241237A (ja) * 1984-05-15 1985-11-30 Mitsubishi Electric Corp 混成集積回路装置
JPH0242499U (enrdf_load_stackoverflow) * 1988-09-19 1990-03-23
JPH054592U (ja) * 1991-06-26 1993-01-22 鐘淵化学工業株式会社 高周波数帯域用電子機器内部回路の反射防止構造
JPH09107191A (ja) * 1995-05-12 1997-04-22 Schlegel Corp シールド体及び、シールド体とシールドされた回路素子の組み合わせ物
JPH09116289A (ja) * 1995-10-24 1997-05-02 Tokin Corp ノイズ抑制型電子装置およびその製造方法
JPH1064714A (ja) * 1996-08-23 1998-03-06 Tokin Corp Emi対策部品及びそれを備えた能動素子
JPH1140709A (ja) * 1997-07-18 1999-02-12 Nec Eng Ltd 半導体実装構造およびその製造方法
WO1999043084A1 (de) * 1998-02-18 1999-08-26 Epcos Ag Verfahren zur herstellung eines elektronischen bauelements, insbesondere eines mit akustischen oberflächenwellen arbeitenden ofw-bauelements
JP2000223884A (ja) * 1999-02-02 2000-08-11 Daido Steel Co Ltd 電磁波吸収体
WO2000059036A1 (en) * 1999-03-26 2000-10-05 Hitachi, Ltd. Semiconductor module and method of mounting
JP2001057496A (ja) * 1999-08-19 2001-02-27 Tokin Corp 電磁干渉抑制体
JP2001068888A (ja) * 1999-08-26 2001-03-16 Sony Corp 電磁波吸収体
JP2001297905A (ja) * 2000-04-17 2001-10-26 Tokin Corp 高周波電流抑制体

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142001A (en) * 1978-04-27 1979-11-05 Tdk Corp Forming metod of microwave reflection preventing layer
JPS60241237A (ja) * 1984-05-15 1985-11-30 Mitsubishi Electric Corp 混成集積回路装置
JPH0242499U (enrdf_load_stackoverflow) * 1988-09-19 1990-03-23
JPH054592U (ja) * 1991-06-26 1993-01-22 鐘淵化学工業株式会社 高周波数帯域用電子機器内部回路の反射防止構造
JPH09107191A (ja) * 1995-05-12 1997-04-22 Schlegel Corp シールド体及び、シールド体とシールドされた回路素子の組み合わせ物
JPH09116289A (ja) * 1995-10-24 1997-05-02 Tokin Corp ノイズ抑制型電子装置およびその製造方法
JPH1064714A (ja) * 1996-08-23 1998-03-06 Tokin Corp Emi対策部品及びそれを備えた能動素子
JPH1140709A (ja) * 1997-07-18 1999-02-12 Nec Eng Ltd 半導体実装構造およびその製造方法
WO1999043084A1 (de) * 1998-02-18 1999-08-26 Epcos Ag Verfahren zur herstellung eines elektronischen bauelements, insbesondere eines mit akustischen oberflächenwellen arbeitenden ofw-bauelements
JP2000223884A (ja) * 1999-02-02 2000-08-11 Daido Steel Co Ltd 電磁波吸収体
WO2000059036A1 (en) * 1999-03-26 2000-10-05 Hitachi, Ltd. Semiconductor module and method of mounting
JP2001057496A (ja) * 1999-08-19 2001-02-27 Tokin Corp 電磁干渉抑制体
JP2001068888A (ja) * 1999-08-26 2001-03-16 Sony Corp 電磁波吸収体
JP2001297905A (ja) * 2000-04-17 2001-10-26 Tokin Corp 高周波電流抑制体

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1684341A3 (de) * 2005-01-21 2007-01-10 Robert Bosch Gmbh Elektrische Schaltung und Verfahren zur Herstellung einer elektrischen Schaltung
JP2006351737A (ja) * 2005-06-15 2006-12-28 Hitachi Ltd 半導体パワーモジュール
JP2009508339A (ja) * 2005-09-15 2009-02-26 スマートラック アイピー ビー.ヴィー. チップモジュール及びその形成方法
US8212339B2 (en) 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8350367B2 (en) 2008-02-05 2013-01-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US7989928B2 (en) 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
US8022511B2 (en) 2008-02-05 2011-09-20 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8410584B2 (en) 2008-08-08 2013-04-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8592958B2 (en) 2008-10-31 2013-11-26 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
JP2010177520A (ja) * 2009-01-30 2010-08-12 Toshiba Corp 電子回路モジュールおよびその製造方法
US8110902B2 (en) 2009-02-19 2012-02-07 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8212340B2 (en) 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8368185B2 (en) 2009-11-19 2013-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8378466B2 (en) 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
US8030750B2 (en) 2009-11-19 2011-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
CN102074516A (zh) * 2009-11-19 2011-05-25 日月光半导体制造股份有限公司 半导体元件封装及其制作方法
US8884424B2 (en) 2010-01-13 2014-11-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US9196597B2 (en) 2010-01-13 2015-11-24 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US9349611B2 (en) 2010-03-22 2016-05-24 Advanced Semiconductor Engineering, Inc. Stackable semiconductor package and manufacturing method thereof
US9070793B2 (en) 2010-08-02 2015-06-30 Advanced Semiconductor Engineering, Inc. Semiconductor device packages having electromagnetic interference shielding and related methods
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
JP2012248848A (ja) * 2011-05-30 2012-12-13 Samsung Electronics Co Ltd 半導体素子、半導体パッケージ、及び電子装置
US9496226B2 (en) 2011-05-30 2016-11-15 Samsung Electronics Co., Ltd. Semiconductor device, semiconductor package, and electronic device
US9179538B2 (en) 2011-06-09 2015-11-03 Apple Inc. Electromagnetic shielding structures for selectively shielding components on a substrate
JP2014516212A (ja) * 2011-06-09 2014-07-07 アップル インコーポレイテッド 基板上の構成部品を遮蔽するための電磁遮蔽構造
US8704341B2 (en) 2012-05-15 2014-04-22 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal dissipation structures and EMI shielding
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
CN104584708A (zh) * 2012-08-16 2015-04-29 住友电木株式会社 电磁波屏蔽用膜和电子部件的覆盖方法
TWI675617B (zh) * 2012-08-16 2019-10-21 日商住友電木股份有限公司 電磁波遮蔽用膜片及電子零件之被覆方法
JP2014057041A (ja) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd 電磁波シールド用フィルム、および電子部品の被覆方法
WO2014027672A1 (ja) * 2012-08-16 2014-02-20 住友ベークライト株式会社 電磁波シールド用フィルム、および電子部品の被覆方法
JP2014057042A (ja) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd 電磁波シールド用フィルム、および電子部品の被覆方法
WO2014027673A1 (ja) * 2012-08-16 2014-02-20 住友ベークライト株式会社 電磁波シールド用フィルム、および電子部品の被覆方法
JP2014057040A (ja) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd 電磁波シールド用フィルム、および電子部品の被覆方法
JP2014057043A (ja) * 2012-08-16 2014-03-27 Sumitomo Bakelite Co Ltd 電磁波シールド用フィルム、および電子部品の被覆方法
JP2014236100A (ja) * 2013-05-31 2014-12-15 住友電気工業株式会社 半導体装置、及び電子装置
US9627327B2 (en) 2014-10-06 2017-04-18 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
JP2016092275A (ja) * 2014-11-07 2016-05-23 信越化学工業株式会社 電磁波シールド性支持基材付封止材及び封止後半導体素子搭載基板、封止後半導体素子形成ウエハ並びに半導体装置
US9865518B2 (en) 2014-11-07 2018-01-09 Shin-Etsu Chemical Co., Ltd. Electromagnetic wave shielding support base-attached encapsulant, encapsulated substrate having semicondutor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, and semiconductor apparatus
US9929078B2 (en) 2016-01-14 2018-03-27 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method for manufacturing the same
WO2018008657A1 (ja) * 2016-07-08 2018-01-11 住友ベークライト株式会社 封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板
JPWO2018008657A1 (ja) * 2016-07-08 2018-07-05 住友ベークライト株式会社 封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板
US10373917B2 (en) 2017-12-05 2019-08-06 Tdk Corporation Electronic circuit package using conductive sealing material
CN111799230A (zh) * 2019-04-01 2020-10-20 三星电子株式会社 半导体封装件
CN114171501A (zh) * 2020-09-10 2022-03-11 中芯集成电路(宁波)有限公司上海分公司 一种射频半导体器件结构及其制造方法
JP2024000949A (ja) * 2022-06-17 2024-01-09 東洋インキScホールディングス株式会社 導電性シート、電子部品及びその製造方法
WO2024053138A1 (ja) * 2022-09-06 2024-03-14 Towa株式会社 シート材の位置決め装置、位置決め方法、及び電子部品に対するシールド層の形成方法

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