JP2003188283A - 金属−絶縁体−金属キャパシタ及びその製造方法 - Google Patents

金属−絶縁体−金属キャパシタ及びその製造方法

Info

Publication number
JP2003188283A
JP2003188283A JP2002353508A JP2002353508A JP2003188283A JP 2003188283 A JP2003188283 A JP 2003188283A JP 2002353508 A JP2002353508 A JP 2002353508A JP 2002353508 A JP2002353508 A JP 2002353508A JP 2003188283 A JP2003188283 A JP 2003188283A
Authority
JP
Japan
Prior art keywords
conductive layer
oxide film
metal
film
ruthenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002353508A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003188283A5 (OSRAM
Inventor
Jae-Hyun Joo
宰 賢 朱
Wan-Don Kim
完 敦 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2003188283A publication Critical patent/JP2003188283A/ja
Publication of JP2003188283A5 publication Critical patent/JP2003188283A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002353508A 2001-12-05 2002-12-05 金属−絶縁体−金属キャパシタ及びその製造方法 Pending JP2003188283A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001-076560 2001-12-05
KR10-2001-0076560A KR100438781B1 (ko) 2001-12-05 2001-12-05 금속-절연체-금속 캐패시터 및 그 제조방법

Publications (2)

Publication Number Publication Date
JP2003188283A true JP2003188283A (ja) 2003-07-04
JP2003188283A5 JP2003188283A5 (OSRAM) 2005-11-24

Family

ID=19716654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002353508A Pending JP2003188283A (ja) 2001-12-05 2002-12-05 金属−絶縁体−金属キャパシタ及びその製造方法

Country Status (4)

Country Link
US (1) US6946341B2 (OSRAM)
JP (1) JP2003188283A (OSRAM)
KR (1) KR100438781B1 (OSRAM)
DE (2) DE10262115B4 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176313A (ja) * 2010-02-25 2011-09-08 Samsung Electronics Co Ltd 電極構造体を具備するキャパシタ、その製造方法及び電極構造体を含む半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909137B2 (en) * 2003-04-07 2005-06-21 International Business Machines Corporation Method of creating deep trench capacitor using a P+ metal electrode
KR100641546B1 (ko) * 2004-12-16 2006-11-01 동부일렉트로닉스 주식회사 금속-절연체-금속 커패시터의 제조 방법
KR100760632B1 (ko) * 2006-03-03 2007-09-20 삼성전자주식회사 커패시터 형성 방법
US7384800B1 (en) * 2006-12-05 2008-06-10 Spansion Llc Method of fabricating metal-insulator-metal (MIM) device with stable data retention
DE102007022748B4 (de) * 2007-05-15 2009-03-05 Qimonda Ag Verfahren zur Strukturierung eines Materials und strukturiertes Material
KR20130078965A (ko) * 2012-01-02 2013-07-10 에스케이하이닉스 주식회사 다성분계 유전막 형성 방법 및 반도체장치 제조 방법
US12057322B2 (en) * 2019-10-21 2024-08-06 Tokyo Electron Limited Methods for etching metal films using plasma processing
CN117715408A (zh) * 2022-09-07 2024-03-15 长鑫存储技术有限公司 一种半导体结构的制造方法及半导体结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794680A (ja) * 1993-09-22 1995-04-07 Fujitsu Ltd 半導体装置の製造方法
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
ATE220478T1 (de) * 1995-02-28 2002-07-15 Micron Technology Inc Verfahren zur herstellung einer struktur unter verwendung von wiederablagerung
KR100228760B1 (ko) * 1995-12-20 1999-11-01 김영환 반도체소자의 캐패시터 형성방법
KR980006341A (ko) * 1996-06-27 1998-03-30 김주용 반도체 소자의 캐패시터 제조 방법
KR100239417B1 (ko) * 1996-12-03 2000-01-15 김영환 반도체 소자의 커패시터 및 그의 제조방법
TW421858B (en) * 1997-06-30 2001-02-11 Texas Instruments Inc Integrated circuit capacitor and memory
US5879975A (en) * 1997-09-05 1999-03-09 Advanced Micro Devices, Inc. Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile
JPH11330397A (ja) * 1998-05-20 1999-11-30 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000200885A (ja) * 1999-01-06 2000-07-18 Seiko Epson Corp キャパシタ―の製造方法
KR100287187B1 (ko) * 1999-03-30 2001-04-16 윤종용 반도체소자의 커패시터 및 그 제조방법
KR100390938B1 (ko) * 2000-02-09 2003-07-10 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100799048B1 (ko) * 2000-06-28 2008-01-28 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조 방법
KR100415516B1 (ko) * 2000-06-28 2004-01-31 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2002151656A (ja) * 2000-11-14 2002-05-24 Toshiba Corp 半導体装置及びその製造方法
KR20020058524A (ko) * 2000-12-30 2002-07-12 박종섭 캐패시터의 하부전극

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176313A (ja) * 2010-02-25 2011-09-08 Samsung Electronics Co Ltd 電極構造体を具備するキャパシタ、その製造方法及び電極構造体を含む半導体装置

Also Published As

Publication number Publication date
DE10262115B4 (de) 2011-03-17
DE10256713B4 (de) 2006-10-26
KR100438781B1 (ko) 2004-07-05
US6946341B2 (en) 2005-09-20
US20030142458A1 (en) 2003-07-31
KR20030046126A (ko) 2003-06-12
DE10256713A1 (de) 2003-07-10

Similar Documents

Publication Publication Date Title
JP3485690B2 (ja) 半導体装置のキャパシタ及びその製造方法
JP3976462B2 (ja) 半導体装置の製造方法
EP1297562B1 (en) Methods for forming and integrated circuit structures containing ruthenium containing layers
US6613629B2 (en) Methods for manufacturing storage nodes of stacked capacitors
US6559025B2 (en) Method for manufacturing a capacitor
JP2003347430A (ja) 王冠構造のキャパシタを有する半導体集積回路装置およびその製造方法
KR20000032886A (ko) 접합 스페이서를 구비한 컨케이브 커패시터의 제조방법
JP2003100996A (ja) スタックキャパシタ及びその製造方法
JP3741167B2 (ja) 高誘電率キャパシタの下部電極の形成方法
KR100438780B1 (ko) 반도체 소자의 커패시터 제조방법
JP2005136414A (ja) キャパシタ、それを備えた半導体素子およびその製造方法
US20030020122A1 (en) Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby
JPH11265989A (ja) 高誘電体キャパシター及びその製造方法
JP2003188283A (ja) 金属−絶縁体−金属キャパシタ及びその製造方法
US20060040444A1 (en) Method for fabricating a three-dimensional capacitor
JP2000183311A (ja) 半導体装置及びその製造方法
JP2000511359A (ja) バリアのない半導体メモリ装置の製造方法
US20020074661A1 (en) Semiconductor device and method of manufacturing the same
JP2001210806A (ja) 電気メッキ法を利用して下部電極を形成する方法
JP2001053249A (ja) 半導体装置およびその製造方法
JP2001223345A (ja) 半導体装置とその製造方法
KR20000001619A (ko) 굴곡형 컨테이너 형상의 하부전극을 갖는 반도체장치의 커패시터 및 그 제조방법
JP4632620B2 (ja) 半導体装置の製造方法
KR100799127B1 (ko) 반구형 그레인이 형성된 기둥 형태의 하부전극을 구비한캐패시터 및 그의 제조 방법
KR20060038615A (ko) 캐패시터 및 그 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051006

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051006

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080311

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090630

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20091124