KR100438781B1 - 금속-절연체-금속 캐패시터 및 그 제조방법 - Google Patents

금속-절연체-금속 캐패시터 및 그 제조방법 Download PDF

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Publication number
KR100438781B1
KR100438781B1 KR10-2001-0076560A KR20010076560A KR100438781B1 KR 100438781 B1 KR100438781 B1 KR 100438781B1 KR 20010076560 A KR20010076560 A KR 20010076560A KR 100438781 B1 KR100438781 B1 KR 100438781B1
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KR
South Korea
Prior art keywords
conductive layer
oxide film
film
lower electrode
ruthenium
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0076560A
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English (en)
Korean (ko)
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KR20030046126A (ko
Inventor
주재현
김완돈
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삼성전자주식회사
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Priority to KR10-2001-0076560A priority Critical patent/KR100438781B1/ko
Priority to DE10256713A priority patent/DE10256713B4/de
Priority to US10/313,911 priority patent/US6946341B2/en
Priority to DE10262115A priority patent/DE10262115B4/de
Priority to JP2002353508A priority patent/JP2003188283A/ja
Publication of KR20030046126A publication Critical patent/KR20030046126A/ko
Application granted granted Critical
Publication of KR100438781B1 publication Critical patent/KR100438781B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-2001-0076560A 2001-12-05 2001-12-05 금속-절연체-금속 캐패시터 및 그 제조방법 Expired - Fee Related KR100438781B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2001-0076560A KR100438781B1 (ko) 2001-12-05 2001-12-05 금속-절연체-금속 캐패시터 및 그 제조방법
DE10256713A DE10256713B4 (de) 2001-12-05 2002-12-04 Verfahren zur Herstellung eines Speicherungsknotenpunktes eines gestapelten Kondensators
US10/313,911 US6946341B2 (en) 2001-12-05 2002-12-04 Methods for manufacturing storage nodes of stacked capacitors
DE10262115A DE10262115B4 (de) 2001-12-05 2002-12-04 Integrierte Schaltungsvorrichtung mit einer Vielzahl an gestapelten Kondensatoren, Metall-Isolator-Metall-Kondensator sowie Herstellungsverfahren dafür
JP2002353508A JP2003188283A (ja) 2001-12-05 2002-12-05 金属−絶縁体−金属キャパシタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0076560A KR100438781B1 (ko) 2001-12-05 2001-12-05 금속-절연체-금속 캐패시터 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20030046126A KR20030046126A (ko) 2003-06-12
KR100438781B1 true KR100438781B1 (ko) 2004-07-05

Family

ID=19716654

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0076560A Expired - Fee Related KR100438781B1 (ko) 2001-12-05 2001-12-05 금속-절연체-금속 캐패시터 및 그 제조방법

Country Status (4)

Country Link
US (1) US6946341B2 (OSRAM)
JP (1) JP2003188283A (OSRAM)
KR (1) KR100438781B1 (OSRAM)
DE (2) DE10256713B4 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909137B2 (en) * 2003-04-07 2005-06-21 International Business Machines Corporation Method of creating deep trench capacitor using a P+ metal electrode
KR100641546B1 (ko) * 2004-12-16 2006-11-01 동부일렉트로닉스 주식회사 금속-절연체-금속 커패시터의 제조 방법
KR100760632B1 (ko) * 2006-03-03 2007-09-20 삼성전자주식회사 커패시터 형성 방법
US7384800B1 (en) * 2006-12-05 2008-06-10 Spansion Llc Method of fabricating metal-insulator-metal (MIM) device with stable data retention
DE102007022748B4 (de) * 2007-05-15 2009-03-05 Qimonda Ag Verfahren zur Strukturierung eines Materials und strukturiertes Material
KR101583516B1 (ko) * 2010-02-25 2016-01-11 삼성전자주식회사 전극 구조체를 구비하는 캐패시터, 이의 제조 방법 및 전극 구조체를 포함하는 반도체 장치
KR20130078965A (ko) * 2012-01-02 2013-07-10 에스케이하이닉스 주식회사 다성분계 유전막 형성 방법 및 반도체장치 제조 방법
US12057322B2 (en) * 2019-10-21 2024-08-06 Tokyo Electron Limited Methods for etching metal films using plasma processing
CN117715408A (zh) * 2022-09-07 2024-03-15 长鑫存储技术有限公司 一种半导体结构的制造方法及半导体结构

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794680A (ja) * 1993-09-22 1995-04-07 Fujitsu Ltd 半導体装置の製造方法
KR980006341A (ko) * 1996-06-27 1998-03-30 김주용 반도체 소자의 캐패시터 제조 방법
KR100228760B1 (ko) * 1995-12-20 1999-11-01 김영환 반도체소자의 캐패시터 형성방법
JP2000200885A (ja) * 1999-01-06 2000-07-18 Seiko Epson Corp キャパシタ―の製造方法
KR20020001373A (ko) * 2000-06-28 2002-01-09 박종섭 반도체 소자의 커패시터 제조 방법
JP2002151656A (ja) * 2000-11-14 2002-05-24 Toshiba Corp 半導体装置及びその製造方法
KR20020058524A (ko) * 2000-12-30 2002-07-12 박종섭 캐패시터의 하부전극

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
EP1202331A3 (en) * 1995-02-28 2002-07-31 Micron Technology, Inc. Method for forming a structure using redeposition
KR100239417B1 (ko) * 1996-12-03 2000-01-15 김영환 반도체 소자의 커패시터 및 그의 제조방법
TW421858B (en) * 1997-06-30 2001-02-11 Texas Instruments Inc Integrated circuit capacitor and memory
US5879975A (en) * 1997-09-05 1999-03-09 Advanced Micro Devices, Inc. Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile
JPH11330397A (ja) 1998-05-20 1999-11-30 Mitsubishi Electric Corp 半導体装置の製造方法
KR100287187B1 (ko) * 1999-03-30 2001-04-16 윤종용 반도체소자의 커패시터 및 그 제조방법
KR100390938B1 (ko) * 2000-02-09 2003-07-10 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100415516B1 (ko) * 2000-06-28 2004-01-31 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794680A (ja) * 1993-09-22 1995-04-07 Fujitsu Ltd 半導体装置の製造方法
KR100228760B1 (ko) * 1995-12-20 1999-11-01 김영환 반도체소자의 캐패시터 형성방법
KR980006341A (ko) * 1996-06-27 1998-03-30 김주용 반도체 소자의 캐패시터 제조 방법
JP2000200885A (ja) * 1999-01-06 2000-07-18 Seiko Epson Corp キャパシタ―の製造方法
KR20020001373A (ko) * 2000-06-28 2002-01-09 박종섭 반도체 소자의 커패시터 제조 방법
JP2002151656A (ja) * 2000-11-14 2002-05-24 Toshiba Corp 半導体装置及びその製造方法
KR20020058524A (ko) * 2000-12-30 2002-07-12 박종섭 캐패시터의 하부전극

Also Published As

Publication number Publication date
US20030142458A1 (en) 2003-07-31
JP2003188283A (ja) 2003-07-04
DE10256713A1 (de) 2003-07-10
DE10262115B4 (de) 2011-03-17
DE10256713B4 (de) 2006-10-26
US6946341B2 (en) 2005-09-20
KR20030046126A (ko) 2003-06-12

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