JP2003124437A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003124437A
JP2003124437A JP2001321590A JP2001321590A JP2003124437A JP 2003124437 A JP2003124437 A JP 2003124437A JP 2001321590 A JP2001321590 A JP 2001321590A JP 2001321590 A JP2001321590 A JP 2001321590A JP 2003124437 A JP2003124437 A JP 2003124437A
Authority
JP
Japan
Prior art keywords
semiconductor device
lead frame
metal block
lead
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001321590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003124437A5 (cg-RX-API-DMAC7.html
Inventor
Hiroyuki Yoshihara
弘行 芳原
Kenichi Hayashi
建一 林
Hisashi Kawato
寿 川藤
Mitsugi Tajiri
貢 田尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001321590A priority Critical patent/JP2003124437A/ja
Priority to US10/126,606 priority patent/US6734551B2/en
Priority to KR10-2002-0032775A priority patent/KR100478883B1/ko
Publication of JP2003124437A publication Critical patent/JP2003124437A/ja
Publication of JP2003124437A5 publication Critical patent/JP2003124437A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2001321590A 2001-10-19 2001-10-19 半導体装置 Pending JP2003124437A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001321590A JP2003124437A (ja) 2001-10-19 2001-10-19 半導体装置
US10/126,606 US6734551B2 (en) 2001-10-19 2002-04-22 Semiconductor device
KR10-2002-0032775A KR100478883B1 (ko) 2001-10-19 2002-06-12 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001321590A JP2003124437A (ja) 2001-10-19 2001-10-19 半導体装置

Publications (2)

Publication Number Publication Date
JP2003124437A true JP2003124437A (ja) 2003-04-25
JP2003124437A5 JP2003124437A5 (cg-RX-API-DMAC7.html) 2005-03-17

Family

ID=19138779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001321590A Pending JP2003124437A (ja) 2001-10-19 2001-10-19 半導体装置

Country Status (3)

Country Link
US (1) US6734551B2 (cg-RX-API-DMAC7.html)
JP (1) JP2003124437A (cg-RX-API-DMAC7.html)
KR (1) KR100478883B1 (cg-RX-API-DMAC7.html)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190798A (ja) * 2005-01-06 2006-07-20 Mitsubishi Electric Corp 半導体装置
JP2009111154A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp 電力半導体モジュール
JP2009283478A (ja) * 2008-05-19 2009-12-03 Mitsubishi Electric Corp 樹脂封止型半導体装置及びその製造方法
JP2012151511A (ja) * 2012-05-15 2012-08-09 Mitsubishi Electric Corp 樹脂封止型半導体装置
WO2012111254A1 (ja) 2011-02-15 2012-08-23 パナソニック株式会社 半導体装置及びその製造方法
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
WO2016117015A1 (ja) * 2015-01-20 2016-07-28 三菱電機株式会社 パワーモジュール
WO2022264982A1 (ja) * 2021-06-14 2022-12-22 ローム株式会社 絶縁モジュール
JP2023079704A (ja) * 2021-11-29 2023-06-08 三菱電機株式会社 半導体装置
JP2023105499A (ja) * 2022-01-19 2023-07-31 三菱電機株式会社 半導体装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634735B2 (ja) * 2000-10-05 2005-03-30 三洋電機株式会社 半導体装置および半導体モジュール
US7145254B2 (en) * 2001-07-26 2006-12-05 Denso Corporation Transfer-molded power device and method for manufacturing transfer-molded power device
JP2003100986A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
US7250672B2 (en) * 2003-11-13 2007-07-31 International Rectifier Corporation Dual semiconductor die package with reverse lead form
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7812441B2 (en) * 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
JP4227987B2 (ja) * 2005-12-01 2009-02-18 三菱電機株式会社 回転電機及びその製造方法
JP2007312560A (ja) * 2006-05-22 2007-11-29 Toyota Motor Corp インシュレータおよび回転電機
WO2008016619A1 (en) 2006-07-31 2008-02-07 Vishay-Siliconix Molybdenum barrier metal for sic schottky diode and process of manufacture
US8048714B2 (en) * 2006-08-11 2011-11-01 Vishay General Semiconductor Llc Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities
US8269338B2 (en) * 2006-08-10 2012-09-18 Vishay General Semiconductor Llc Semiconductor device having improved heat dissipation capabilities
US9054077B2 (en) * 2010-03-10 2015-06-09 Altera Corporation Package having spaced apart heat sink
DE102010044709B4 (de) * 2010-09-08 2015-07-02 Vincotech Holdings S.à.r.l. Leistungshalbleitermodul mit Metallsinterverbindungen sowie Herstellungsverfahren
US8802553B2 (en) * 2011-02-10 2014-08-12 Infineon Technologies Ag Method for mounting a semiconductor chip on a carrier
KR101237566B1 (ko) * 2011-07-20 2013-02-26 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
JP6261309B2 (ja) 2013-12-02 2018-01-17 三菱電機株式会社 パワーモジュール
US10483178B2 (en) * 2017-01-03 2019-11-19 Infineon Technologies Ag Semiconductor device including an encapsulation material defining notches
US9978672B1 (en) 2017-05-24 2018-05-22 Infineon Technologies Ag Transistor package with terminals coupled via chip carrier
US10622274B2 (en) 2017-10-06 2020-04-14 Industrial Technology Research Institute Chip package
JP6939392B2 (ja) * 2017-10-17 2021-09-22 三菱電機株式会社 パワーモジュール
JP7615015B2 (ja) * 2021-12-07 2025-01-16 三菱電機株式会社 半導体装置
JP7822300B2 (ja) * 2022-10-25 2026-03-02 三菱電機株式会社 電力用半導体装置

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JPS6153752A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd リ−ドフレ−ム
US5430331A (en) * 1993-06-23 1995-07-04 Vlsi Technology, Inc. Plastic encapsulated integrated circuit package having an embedded thermal dissipator
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
WO1998024122A1 (en) * 1996-11-28 1998-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH11233712A (ja) * 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びその製法とそれを使った電気機器
JP2000049184A (ja) * 1998-05-27 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
KR100403608B1 (ko) * 2000-11-10 2003-11-01 페어차일드코리아반도체 주식회사 스택구조의 인텔리젠트 파워 모듈 패키지 및 그 제조방법

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190798A (ja) * 2005-01-06 2006-07-20 Mitsubishi Electric Corp 半導体装置
JP2009111154A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp 電力半導体モジュール
JP2009283478A (ja) * 2008-05-19 2009-12-03 Mitsubishi Electric Corp 樹脂封止型半導体装置及びその製造方法
US8772923B2 (en) 2011-02-15 2014-07-08 Panasonic Corporation Semiconductor device having leads with cutout and method of manufacturing the same
WO2012111254A1 (ja) 2011-02-15 2012-08-23 パナソニック株式会社 半導体装置及びその製造方法
JP2012151511A (ja) * 2012-05-15 2012-08-09 Mitsubishi Electric Corp 樹脂封止型半導体装置
US9252028B2 (en) 2012-11-15 2016-02-02 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same
US9171774B2 (en) 2012-11-15 2015-10-27 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
WO2016117015A1 (ja) * 2015-01-20 2016-07-28 三菱電機株式会社 パワーモジュール
JPWO2016117015A1 (ja) * 2015-01-20 2017-05-18 三菱電機株式会社 パワーモジュール
CN107210283A (zh) * 2015-01-20 2017-09-26 三菱电机株式会社 功率模块
US10074585B2 (en) 2015-01-20 2018-09-11 Mitsubishi Electric Corporation Power module with dummy terminal structure
WO2022264982A1 (ja) * 2021-06-14 2022-12-22 ローム株式会社 絶縁モジュール
JP2023079704A (ja) * 2021-11-29 2023-06-08 三菱電機株式会社 半導体装置
JP7603571B2 (ja) 2021-11-29 2024-12-20 三菱電機株式会社 半導体装置
JP2023105499A (ja) * 2022-01-19 2023-07-31 三菱電機株式会社 半導体装置
US12500185B2 (en) 2022-01-19 2025-12-16 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
US20030075783A1 (en) 2003-04-24
KR100478883B1 (ko) 2005-03-25
US6734551B2 (en) 2004-05-11
KR20030032816A (ko) 2003-04-26

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