KR100478883B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100478883B1
KR100478883B1 KR10-2002-0032775A KR20020032775A KR100478883B1 KR 100478883 B1 KR100478883 B1 KR 100478883B1 KR 20020032775 A KR20020032775 A KR 20020032775A KR 100478883 B1 KR100478883 B1 KR 100478883B1
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KR
South Korea
Prior art keywords
semiconductor device
lead frame
metal block
lead
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR10-2002-0032775A
Other languages
English (en)
Korean (ko)
Other versions
KR20030032816A (ko
Inventor
요시하라히로유키
하야시켄이치
카와후지히사시
타지리미쓰구
Original Assignee
미쓰비시덴키 가부시키가이샤
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Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030032816A publication Critical patent/KR20030032816A/ko
Application granted granted Critical
Publication of KR100478883B1 publication Critical patent/KR100478883B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR10-2002-0032775A 2001-10-19 2002-06-12 반도체장치 Expired - Lifetime KR100478883B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001321590A JP2003124437A (ja) 2001-10-19 2001-10-19 半導体装置
JPJP-P-2001-00321590 2001-10-19

Publications (2)

Publication Number Publication Date
KR20030032816A KR20030032816A (ko) 2003-04-26
KR100478883B1 true KR100478883B1 (ko) 2005-03-25

Family

ID=19138779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0032775A Expired - Lifetime KR100478883B1 (ko) 2001-10-19 2002-06-12 반도체장치

Country Status (3)

Country Link
US (1) US6734551B2 (cg-RX-API-DMAC7.html)
JP (1) JP2003124437A (cg-RX-API-DMAC7.html)
KR (1) KR100478883B1 (cg-RX-API-DMAC7.html)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634735B2 (ja) * 2000-10-05 2005-03-30 三洋電機株式会社 半導体装置および半導体モジュール
US7145254B2 (en) * 2001-07-26 2006-12-05 Denso Corporation Transfer-molded power device and method for manufacturing transfer-molded power device
JP2003100986A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
US7250672B2 (en) * 2003-11-13 2007-07-31 International Rectifier Corporation Dual semiconductor die package with reverse lead form
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7812441B2 (en) * 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
JP4533152B2 (ja) * 2005-01-06 2010-09-01 三菱電機株式会社 半導体装置
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
JP4227987B2 (ja) * 2005-12-01 2009-02-18 三菱電機株式会社 回転電機及びその製造方法
JP2007312560A (ja) * 2006-05-22 2007-11-29 Toyota Motor Corp インシュレータおよび回転電機
WO2008016619A1 (en) 2006-07-31 2008-02-07 Vishay-Siliconix Molybdenum barrier metal for sic schottky diode and process of manufacture
US8048714B2 (en) * 2006-08-11 2011-11-01 Vishay General Semiconductor Llc Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities
US8269338B2 (en) * 2006-08-10 2012-09-18 Vishay General Semiconductor Llc Semiconductor device having improved heat dissipation capabilities
JP5163055B2 (ja) * 2007-10-30 2013-03-13 三菱電機株式会社 電力半導体モジュール
JP5125758B2 (ja) * 2008-05-19 2013-01-23 三菱電機株式会社 樹脂封止型半導体装置及びその製造方法
US9054077B2 (en) * 2010-03-10 2015-06-09 Altera Corporation Package having spaced apart heat sink
DE102010044709B4 (de) * 2010-09-08 2015-07-02 Vincotech Holdings S.à.r.l. Leistungshalbleitermodul mit Metallsinterverbindungen sowie Herstellungsverfahren
US8802553B2 (en) * 2011-02-10 2014-08-12 Infineon Technologies Ag Method for mounting a semiconductor chip on a carrier
EP2677539B1 (en) * 2011-02-15 2017-07-05 Panasonic Intellectual Property Management Co., Ltd. Process for manufacture of a semiconductor device
KR101237566B1 (ko) * 2011-07-20 2013-02-26 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP2013070026A (ja) 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
JP5354058B2 (ja) * 2012-05-15 2013-11-27 三菱電機株式会社 樹脂封止型半導体装置
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
JP6261309B2 (ja) 2013-12-02 2018-01-17 三菱電機株式会社 パワーモジュール
JPWO2016117015A1 (ja) * 2015-01-20 2017-05-18 三菱電機株式会社 パワーモジュール
US10483178B2 (en) * 2017-01-03 2019-11-19 Infineon Technologies Ag Semiconductor device including an encapsulation material defining notches
US9978672B1 (en) 2017-05-24 2018-05-22 Infineon Technologies Ag Transistor package with terminals coupled via chip carrier
US10622274B2 (en) 2017-10-06 2020-04-14 Industrial Technology Research Institute Chip package
JP6939392B2 (ja) * 2017-10-17 2021-09-22 三菱電機株式会社 パワーモジュール
WO2022264982A1 (ja) * 2021-06-14 2022-12-22 ローム株式会社 絶縁モジュール
JP7603571B2 (ja) * 2021-11-29 2024-12-20 三菱電機株式会社 半導体装置
JP7615015B2 (ja) * 2021-12-07 2025-01-16 三菱電機株式会社 半導体装置
JP2023105499A (ja) * 2022-01-19 2023-07-31 三菱電機株式会社 半導体装置
JP7822300B2 (ja) * 2022-10-25 2026-03-02 三菱電機株式会社 電力用半導体装置

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JPS6153752A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd リ−ドフレ−ム
JPH09129822A (ja) * 1995-10-26 1997-05-16 Mitsubishi Electric Corp 半導体装置
KR19990072605A (ko) * 1998-02-12 1999-09-27 가나이 쓰도무 반도체장치및그제법과그것을사용한전기기기
JP2000049184A (ja) * 1998-05-27 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
JP2002164492A (ja) * 2000-11-10 2002-06-07 Fairchild Korea Semiconductor Kk インテリジェントパワーモジュールパッケージ

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US5430331A (en) * 1993-06-23 1995-07-04 Vlsi Technology, Inc. Plastic encapsulated integrated circuit package having an embedded thermal dissipator
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
WO1998024122A1 (en) * 1996-11-28 1998-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS6153752A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd リ−ドフレ−ム
JPH09129822A (ja) * 1995-10-26 1997-05-16 Mitsubishi Electric Corp 半導体装置
KR19990072605A (ko) * 1998-02-12 1999-09-27 가나이 쓰도무 반도체장치및그제법과그것을사용한전기기기
JP2000049184A (ja) * 1998-05-27 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
JP2002164492A (ja) * 2000-11-10 2002-06-07 Fairchild Korea Semiconductor Kk インテリジェントパワーモジュールパッケージ

Also Published As

Publication number Publication date
US20030075783A1 (en) 2003-04-24
US6734551B2 (en) 2004-05-11
JP2003124437A (ja) 2003-04-25
KR20030032816A (ko) 2003-04-26

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