JP2003030993A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003030993A
JP2003030993A JP2001216980A JP2001216980A JP2003030993A JP 2003030993 A JP2003030993 A JP 2003030993A JP 2001216980 A JP2001216980 A JP 2001216980A JP 2001216980 A JP2001216980 A JP 2001216980A JP 2003030993 A JP2003030993 A JP 2003030993A
Authority
JP
Japan
Prior art keywords
data
page
cell array
memory cell
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001216980A
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Kawai
鉱一 河合
Kenichi Imamiya
賢一 今宮
Hiroshi Nakamura
寛 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001216980A priority Critical patent/JP2003030993A/ja
Priority to US10/194,337 priority patent/US6661706B2/en
Priority to TW091115698A priority patent/TW564425B/zh
Priority to KR1020020041606A priority patent/KR100551646B1/ko
Priority to CN2006100751326A priority patent/CN1838324B/zh
Priority to CNB021262519A priority patent/CN1257510C/zh
Publication of JP2003030993A publication Critical patent/JP2003030993A/ja
Priority to US10/699,398 priority patent/US7016228B2/en
Priority to US11/219,193 priority patent/US7082054B2/en
Priority to US11/219,194 priority patent/US7180778B2/en
Priority to US11/328,681 priority patent/US7130217B2/en
Priority to US11/582,065 priority patent/US7315473B2/en
Priority to US12/004,546 priority patent/US7596027B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G11C7/1021—Page serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled column address stroke pulses each with its associated bit line address
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2001216980A 2001-07-17 2001-07-17 半導体記憶装置 Pending JP2003030993A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2001216980A JP2003030993A (ja) 2001-07-17 2001-07-17 半導体記憶装置
US10/194,337 US6661706B2 (en) 2001-07-17 2002-07-12 Semiconductor storage device having page copying
TW091115698A TW564425B (en) 2001-07-17 2002-07-15 Semiconductor memory device having page copy function
KR1020020041606A KR100551646B1 (ko) 2001-07-17 2002-07-16 페이지 복사 기능을 갖는 반도체 기억 장치
CNB021262519A CN1257510C (zh) 2001-07-17 2002-07-17 具有页复制功能的半导体存储装置及其工作方法
CN2006100751326A CN1838324B (zh) 2001-07-17 2002-07-17 具有页复制功能的半导体存储装置
US10/699,398 US7016228B2 (en) 2001-07-17 2003-10-31 Semiconductor storage device having page copying function
US11/219,193 US7082054B2 (en) 2001-07-17 2005-09-02 Semiconductor storage device having page copying function
US11/219,194 US7180778B2 (en) 2001-07-17 2005-09-02 Semiconductor storage device having page copying function
US11/328,681 US7130217B2 (en) 2001-07-17 2006-01-09 Semiconductor storage device having page copying function
US11/582,065 US7315473B2 (en) 2001-07-17 2006-10-17 Semiconductor storage device having page copying function
US12/004,546 US7596027B2 (en) 2001-07-17 2007-12-21 Semiconductor storage device having page copying function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001216980A JP2003030993A (ja) 2001-07-17 2001-07-17 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006083325A Division JP2006209963A (ja) 2006-03-24 2006-03-24 半導体記憶装置

Publications (1)

Publication Number Publication Date
JP2003030993A true JP2003030993A (ja) 2003-01-31

Family

ID=19051382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001216980A Pending JP2003030993A (ja) 2001-07-17 2001-07-17 半導体記憶装置

Country Status (5)

Country Link
US (7) US6661706B2 (ko)
JP (1) JP2003030993A (ko)
KR (1) KR100551646B1 (ko)
CN (2) CN1838324B (ko)
TW (1) TW564425B (ko)

Cited By (6)

* Cited by examiner, † Cited by third party
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JP2004327021A (ja) * 2003-04-29 2004-11-18 Samsung Electronics Co Ltd パーシャルコピーバック動作モードを有するフラッシュメモリ装置
WO2006106577A1 (ja) * 2005-03-31 2006-10-12 Spansion Llc 半導体装置及びその制御方法
US7953950B2 (en) 2004-07-12 2011-05-31 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance
JP2012104110A (ja) * 2010-11-05 2012-05-31 Samsung Electronics Co Ltd メモリシステム及びメモリシステムの動作方法
CN102576330A (zh) * 2009-06-12 2012-07-11 提琴存储器公司 具有持久化无用单元收集机制的存储系统
US9076514B2 (en) 2013-01-03 2015-07-07 Samsung Electronics Co., Ltd. Methods of copying a page in a memory device and methods of managing pages in a memory system

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JP4080843B2 (ja) * 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
US6768671B1 (en) * 2003-03-05 2004-07-27 Nexflash Technologies, Inc. Nonvolatile memory and method of operation thereof to control erase disturb
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JP4237648B2 (ja) * 2004-01-30 2009-03-11 株式会社東芝 不揮発性半導体記憶装置
US7394693B2 (en) * 2005-08-31 2008-07-01 Micron Technology, Inc. Multiple select gate architecture
US7996598B2 (en) * 2006-03-14 2011-08-09 Stmicroelectronics Pvt. Ltd. Memory management module
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US7324389B2 (en) * 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
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KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
US8508973B2 (en) 2010-11-16 2013-08-13 Seagate Technology Llc Method of switching out-of-plane magnetic tunnel junction cells
US20180169279A1 (en) 2011-03-07 2018-06-21 The Trustees Of Columbia University In The City Of New York Apparatus, method and system for selectively affecting and/or killing a virus
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JP2021140837A (ja) * 2020-03-02 2021-09-16 キオクシア株式会社 半導体記憶装置

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Cited By (16)

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Publication number Priority date Publication date Assignee Title
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
JP2004327021A (ja) * 2003-04-29 2004-11-18 Samsung Electronics Co Ltd パーシャルコピーバック動作モードを有するフラッシュメモリ装置
US9244620B2 (en) 2004-07-12 2016-01-26 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance based on performance parameters
US7953950B2 (en) 2004-07-12 2011-05-31 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance
USRE47638E1 (en) 2004-07-12 2019-10-08 Toshiba Memory Corporation Storage device including flash memory and capable of predicting storage device performance based on performance parameters
US8539140B2 (en) 2004-07-12 2013-09-17 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance based on performance parameters
US8832361B2 (en) 2004-07-12 2014-09-09 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance based on performance parameters
US9026723B2 (en) 2004-07-12 2015-05-05 Kabushiki Kaisha Toshiba Storage device including flash memory and capable of predicting storage device performance based on performance parameters
WO2006106577A1 (ja) * 2005-03-31 2006-10-12 Spansion Llc 半導体装置及びその制御方法
US7362620B2 (en) 2005-03-31 2008-04-22 Spansion Llc Semiconductor device and method of controlling the same
JPWO2006106577A1 (ja) * 2005-03-31 2008-09-11 スパンション エルエルシー 半導体装置及びその制御方法
JP4896011B2 (ja) * 2005-03-31 2012-03-14 スパンション エルエルシー 半導体装置及びその制御方法
CN102576330A (zh) * 2009-06-12 2012-07-11 提琴存储器公司 具有持久化无用单元收集机制的存储系统
US10754769B2 (en) 2009-06-12 2020-08-25 Violin Systems Llc Memory system having persistent garbage collection
JP2012104110A (ja) * 2010-11-05 2012-05-31 Samsung Electronics Co Ltd メモリシステム及びメモリシステムの動作方法
US9076514B2 (en) 2013-01-03 2015-07-07 Samsung Electronics Co., Ltd. Methods of copying a page in a memory device and methods of managing pages in a memory system

Also Published As

Publication number Publication date
CN1838324A (zh) 2006-09-27
US20060002213A1 (en) 2006-01-05
US20060164897A1 (en) 2006-07-27
US20080181005A1 (en) 2008-07-31
CN1257510C (zh) 2006-05-24
US20070047360A1 (en) 2007-03-01
TW564425B (en) 2003-12-01
US7016228B2 (en) 2006-03-21
CN1838324B (zh) 2011-08-10
US6661706B2 (en) 2003-12-09
KR20030011542A (ko) 2003-02-11
KR100551646B1 (ko) 2006-02-14
US20060002214A1 (en) 2006-01-05
US7180778B2 (en) 2007-02-20
US7130217B2 (en) 2006-10-31
US20030016559A1 (en) 2003-01-23
US7082054B2 (en) 2006-07-25
US7596027B2 (en) 2009-09-29
US20040090849A1 (en) 2004-05-13
CN1397955A (zh) 2003-02-19
US7315473B2 (en) 2008-01-01

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