JP2002539068A5 - - Google Patents

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Publication number
JP2002539068A5
JP2002539068A5 JP2000605808A JP2000605808A JP2002539068A5 JP 2002539068 A5 JP2002539068 A5 JP 2002539068A5 JP 2000605808 A JP2000605808 A JP 2000605808A JP 2000605808 A JP2000605808 A JP 2000605808A JP 2002539068 A5 JP2002539068 A5 JP 2002539068A5
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JP
Japan
Prior art keywords
crucible
barium
silica
silicon
polysilicon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000605808A
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English (en)
Japanese (ja)
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JP4560216B2 (ja
JP2002539068A (ja
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Priority claimed from US09/521,288 external-priority patent/US6319313B1/en
Application filed filed Critical
Publication of JP2002539068A publication Critical patent/JP2002539068A/ja
Publication of JP2002539068A5 publication Critical patent/JP2002539068A5/ja
Application granted granted Critical
Publication of JP4560216B2 publication Critical patent/JP4560216B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000605808A 1999-03-15 2000-03-14 結晶成長工程に使用される溶融シリコンのバリウムドーピング Expired - Lifetime JP4560216B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12440099P 1999-03-15 1999-03-15
US09/521,288 US6319313B1 (en) 1999-03-15 2000-03-08 Barium doping of molten silicon for use in crystal growing process
US60/124,400 2000-03-08
US09/521,288 2000-03-08
PCT/US2000/006565 WO2000055394A1 (en) 1999-03-15 2000-03-14 Barium doping of molten silicon for use in crystal growing process

Publications (3)

Publication Number Publication Date
JP2002539068A JP2002539068A (ja) 2002-11-19
JP2002539068A5 true JP2002539068A5 (https=) 2006-12-21
JP4560216B2 JP4560216B2 (ja) 2010-10-13

Family

ID=26822543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000605808A Expired - Lifetime JP4560216B2 (ja) 1999-03-15 2000-03-14 結晶成長工程に使用される溶融シリコンのバリウムドーピング

Country Status (8)

Country Link
US (2) US6319313B1 (https=)
EP (1) EP1175519B1 (https=)
JP (1) JP4560216B2 (https=)
KR (1) KR100719821B1 (https=)
CN (1) CN1166822C (https=)
DE (1) DE60005659T2 (https=)
TW (1) TWI241365B (https=)
WO (1) WO2000055394A1 (https=)

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JP2019509969A (ja) * 2016-03-23 2019-04-11 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 石英ガラス坩堝結晶育成法のための失透剤
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN107604437A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 在石英坩埚中制备硅熔融体的方法
CN109056055B (zh) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 一种单晶硅棒的生产方法
CN109267149A (zh) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 一种石英坩埚及控制碳酸钡用量的方法
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CN114368901B (zh) * 2021-12-28 2023-09-26 无锡市尚领石英科技有限公司 高良品率加厚型单晶石英坩埚及其制备工艺

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