CN1166822C - 在晶体生长过程中使用的硅熔体的钡掺杂 - Google Patents

在晶体生长过程中使用的硅熔体的钡掺杂 Download PDF

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Publication number
CN1166822C
CN1166822C CNB008050473A CN00805047A CN1166822C CN 1166822 C CN1166822 C CN 1166822C CN B008050473 A CNB008050473 A CN B008050473A CN 00805047 A CN00805047 A CN 00805047A CN 1166822 C CN1166822 C CN 1166822C
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CN
China
Prior art keywords
crucible
barium
silicon
melt
tungsten
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Expired - Fee Related
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CNB008050473A
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English (en)
Chinese (zh)
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CN1343265A (zh
Inventor
Rj
R·J·飞利普斯
S·J·克勒特尼尔
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J·D·赫德尔
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SunEdison Inc
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SunEdison Inc
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Publication of CN1343265A publication Critical patent/CN1343265A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CNB008050473A 1999-03-15 2000-03-14 在晶体生长过程中使用的硅熔体的钡掺杂 Expired - Fee Related CN1166822C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12440099P 1999-03-15 1999-03-15
US09/521,288 US6319313B1 (en) 1999-03-15 2000-03-08 Barium doping of molten silicon for use in crystal growing process
US60/124,400 2000-03-08
US09/521,288 2000-03-08

Publications (2)

Publication Number Publication Date
CN1343265A CN1343265A (zh) 2002-04-03
CN1166822C true CN1166822C (zh) 2004-09-15

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Family Applications (1)

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CNB008050473A Expired - Fee Related CN1166822C (zh) 1999-03-15 2000-03-14 在晶体生长过程中使用的硅熔体的钡掺杂

Country Status (8)

Country Link
US (2) US6319313B1 (https=)
EP (1) EP1175519B1 (https=)
JP (1) JP4560216B2 (https=)
KR (1) KR100719821B1 (https=)
CN (1) CN1166822C (https=)
DE (1) DE60005659T2 (https=)
TW (1) TWI241365B (https=)
WO (1) WO2000055394A1 (https=)

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NO336720B1 (no) * 2013-09-09 2015-10-26 Elkem Solar As Fremgangsmåte for forbedring av effektiviteten av solceller.
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JP2019509969A (ja) * 2016-03-23 2019-04-11 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 石英ガラス坩堝結晶育成法のための失透剤
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN107604437A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 在石英坩埚中制备硅熔融体的方法
CN109056055B (zh) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 一种单晶硅棒的生产方法
CN109267149A (zh) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 一种石英坩埚及控制碳酸钡用量的方法
DE102020000701A1 (de) * 2020-02-03 2021-08-05 Siltronic Ag Quarzglastiegel zur Herstellung von Siliciumkristallen und Verfahren zur Herstellung von Quarzglastiegel
CN114368901B (zh) * 2021-12-28 2023-09-26 无锡市尚领石英科技有限公司 高良品率加厚型单晶石英坩埚及其制备工艺

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Also Published As

Publication number Publication date
KR20010113746A (ko) 2001-12-28
EP1175519A1 (en) 2002-01-30
TWI241365B (en) 2005-10-11
WO2000055394A8 (en) 2001-02-08
WO2000055394A1 (en) 2000-09-21
JP4560216B2 (ja) 2010-10-13
US20010032580A1 (en) 2001-10-25
EP1175519B1 (en) 2003-10-01
US6319313B1 (en) 2001-11-20
KR100719821B1 (ko) 2007-05-18
CN1343265A (zh) 2002-04-03
DE60005659T2 (de) 2004-08-12
US6461427B2 (en) 2002-10-08
JP2002539068A (ja) 2002-11-19
DE60005659D1 (de) 2003-11-06

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