KR100719821B1 - 결정 성장 공정에서 사용하기 위한 용융 실리콘의 바륨 도핑 - Google Patents

결정 성장 공정에서 사용하기 위한 용융 실리콘의 바륨 도핑 Download PDF

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Publication number
KR100719821B1
KR100719821B1 KR1020017011680A KR20017011680A KR100719821B1 KR 100719821 B1 KR100719821 B1 KR 100719821B1 KR 1020017011680 A KR1020017011680 A KR 1020017011680A KR 20017011680 A KR20017011680 A KR 20017011680A KR 100719821 B1 KR100719821 B1 KR 100719821B1
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South Korea
Prior art keywords
crucible
barium
silicon
silica
melt
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Korean (ko)
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KR20010113746A (ko
Inventor
필립스리차드제이
켈트너스티븐제이
홀더존디
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020017011680A 1999-03-15 2000-03-14 결정 성장 공정에서 사용하기 위한 용융 실리콘의 바륨 도핑 Expired - Fee Related KR100719821B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12440099P 1999-03-15 1999-03-15
US09/521,288 US6319313B1 (en) 1999-03-15 2000-03-08 Barium doping of molten silicon for use in crystal growing process
US60/124,400 2000-03-08
US09/521,288 2000-03-08

Publications (2)

Publication Number Publication Date
KR20010113746A KR20010113746A (ko) 2001-12-28
KR100719821B1 true KR100719821B1 (ko) 2007-05-18

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KR1020017011680A Expired - Fee Related KR100719821B1 (ko) 1999-03-15 2000-03-14 결정 성장 공정에서 사용하기 위한 용융 실리콘의 바륨 도핑

Country Status (8)

Country Link
US (2) US6319313B1 (https=)
EP (1) EP1175519B1 (https=)
JP (1) JP4560216B2 (https=)
KR (1) KR100719821B1 (https=)
CN (1) CN1166822C (https=)
DE (1) DE60005659T2 (https=)
TW (1) TWI241365B (https=)
WO (1) WO2000055394A1 (https=)

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US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
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US7383696B2 (en) * 2005-09-08 2008-06-10 Heraeus Shin-Etsu America, Inc. Silica glass crucible with bubble-free and reduced bubble growth wall
US7427327B2 (en) * 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
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JP4788445B2 (ja) * 2006-04-04 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法
JP4788444B2 (ja) * 2006-04-04 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US7547908B2 (en) * 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
KR100977631B1 (ko) * 2008-01-17 2010-08-23 주식회사 실트론 고저항 실리콘 단결정과 그 제조방법 및 웨이퍼
WO2011009062A2 (en) * 2009-07-16 2011-01-20 Memc Singapore Pte, Ltd. Coated crucibles and methods for preparing and use thereof
JP5500684B2 (ja) * 2010-06-25 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法
US9221709B2 (en) * 2011-03-31 2015-12-29 Raytheon Company Apparatus for producing a vitreous inner layer on a fused silica body, and method of operating same
US20120267280A1 (en) * 2011-04-25 2012-10-25 Glen Bennett Cook Vessel for molten semiconducting materials and methods of making the same
US20130247818A1 (en) * 2011-05-25 2013-09-26 Saint-Gobain Research (Shanghai) Co., Ltd. Silica crucible and method for fabricating the same
JP5509188B2 (ja) 2011-12-26 2014-06-04 ジルトロニック アクチエンゲゼルシャフト 単結晶シリコンの製造方法
NO336720B1 (no) * 2013-09-09 2015-10-26 Elkem Solar As Fremgangsmåte for forbedring av effektiviteten av solceller.
NO339608B1 (no) 2013-09-09 2017-01-09 Elkem Solar As Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
JP2019509969A (ja) * 2016-03-23 2019-04-11 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 石英ガラス坩堝結晶育成法のための失透剤
CN107604429A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法
CN107604437A (zh) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 在石英坩埚中制备硅熔融体的方法
CN109056055B (zh) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 一种单晶硅棒的生产方法
CN109267149A (zh) * 2018-11-29 2019-01-25 内蒙古中环光伏材料有限公司 一种石英坩埚及控制碳酸钡用量的方法
DE102020000701A1 (de) * 2020-02-03 2021-08-05 Siltronic Ag Quarzglastiegel zur Herstellung von Siliciumkristallen und Verfahren zur Herstellung von Quarzglastiegel
CN114368901B (zh) * 2021-12-28 2023-09-26 无锡市尚领石英科技有限公司 高良品率加厚型单晶石英坩埚及其制备工艺

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JPH0748885A (ja) * 1993-08-09 1995-02-21 Natl House Ind Co Ltd 耐火壁体の構造
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Also Published As

Publication number Publication date
CN1166822C (zh) 2004-09-15
KR20010113746A (ko) 2001-12-28
EP1175519A1 (en) 2002-01-30
TWI241365B (en) 2005-10-11
WO2000055394A8 (en) 2001-02-08
WO2000055394A1 (en) 2000-09-21
JP4560216B2 (ja) 2010-10-13
US20010032580A1 (en) 2001-10-25
EP1175519B1 (en) 2003-10-01
US6319313B1 (en) 2001-11-20
CN1343265A (zh) 2002-04-03
DE60005659T2 (de) 2004-08-12
US6461427B2 (en) 2002-10-08
JP2002539068A (ja) 2002-11-19
DE60005659D1 (de) 2003-11-06

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