JP2002270790A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2002270790A
JP2002270790A JP2001373071A JP2001373071A JP2002270790A JP 2002270790 A JP2002270790 A JP 2002270790A JP 2001373071 A JP2001373071 A JP 2001373071A JP 2001373071 A JP2001373071 A JP 2001373071A JP 2002270790 A JP2002270790 A JP 2002270790A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
layer
transistor
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001373071A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002270790A5 (OSRAM
Inventor
Yoshiaki Asao
吉昭 浅尾
Hiroshi Ito
洋 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001373071A priority Critical patent/JP2002270790A/ja
Priority to TW090131068A priority patent/TW521426B/zh
Priority to KR10-2001-0085014A priority patent/KR100431483B1/ko
Priority to US10/025,753 priority patent/US6661689B2/en
Priority to CNB011439599A priority patent/CN1244154C/zh
Publication of JP2002270790A publication Critical patent/JP2002270790A/ja
Publication of JP2002270790A5 publication Critical patent/JP2002270790A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2001373071A 2000-12-27 2001-12-06 半導体記憶装置 Pending JP2002270790A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001373071A JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置
TW090131068A TW521426B (en) 2000-12-27 2001-12-14 Semiconductor memory device
KR10-2001-0085014A KR100431483B1 (ko) 2000-12-27 2001-12-26 반도체 기억 장치
US10/025,753 US6661689B2 (en) 2000-12-27 2001-12-26 Semiconductor memory device
CNB011439599A CN1244154C (zh) 2000-12-27 2001-12-27 半导体存储装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-399223 2000-12-27
JP2000399223 2000-12-27
JP2001373071A JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002270790A true JP2002270790A (ja) 2002-09-20
JP2002270790A5 JP2002270790A5 (OSRAM) 2004-07-22

Family

ID=26606944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001373071A Pending JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置

Country Status (5)

Country Link
US (1) US6661689B2 (OSRAM)
JP (1) JP2002270790A (OSRAM)
KR (1) KR100431483B1 (OSRAM)
CN (1) CN1244154C (OSRAM)
TW (1) TW521426B (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021626A (ja) * 2004-03-12 2009-01-29 Japan Science & Technology Agency 磁気多層膜及び多層構造体
US7672092B2 (en) 2006-06-14 2010-03-02 Tdk Corporation Method for manufacturing magnetic field detecting element, utilizing diffusion of metal
US7804667B2 (en) 2006-05-25 2010-09-28 Tdk Corporation Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
US8199550B2 (en) 2008-11-13 2012-06-12 Renesas Electronics Corporation Magnetic memory device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3808799B2 (ja) 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
WO2003098636A2 (en) * 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US6801450B2 (en) * 2002-05-22 2004-10-05 Hewlett-Packard Development Company, L.P. Memory cell isolation
JP4322481B2 (ja) * 2002-08-12 2009-09-02 株式会社東芝 半導体集積回路装置
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP4290494B2 (ja) * 2003-07-08 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US7099176B2 (en) * 2004-04-19 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Non-orthogonal write line structure in MRAM
US7265053B2 (en) * 2004-04-26 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Trench photolithography rework for removal of photoresist residue
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7170775B2 (en) * 2005-01-06 2007-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current
CN105449099B (zh) * 2015-10-15 2018-04-06 上海磁宇信息科技有限公司 交叉矩阵列式磁性随机存储器及其读写方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10106255A (ja) * 1996-09-26 1998-04-24 Toshiba Corp 半導体記憶装置
JP2000106462A (ja) * 1998-06-30 2000-04-11 Toshiba Corp 磁気素子とそれを用いた磁気メモリおよび磁気センサ
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP2002124079A (ja) * 2000-10-17 2002-04-26 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002203388A (ja) * 2000-10-31 2002-07-19 Infineon Technologies Ag Ｍｒａｍ装置における、望ましくないプログラミングを阻止する方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4124844B2 (ja) 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
JP3803503B2 (ja) 1999-04-30 2006-08-02 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP4637388B2 (ja) * 2001-03-23 2011-02-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10106255A (ja) * 1996-09-26 1998-04-24 Toshiba Corp 半導体記憶装置
JP2000106462A (ja) * 1998-06-30 2000-04-11 Toshiba Corp 磁気素子とそれを用いた磁気メモリおよび磁気センサ
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002124079A (ja) * 2000-10-17 2002-04-26 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002203388A (ja) * 2000-10-31 2002-07-19 Infineon Technologies Ag Ｍｒａｍ装置における、望ましくないプログラミングを阻止する方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10367138B2 (en) 2004-03-12 2019-07-30 Japan Science And Technology Agency Magnetic tunnel junction device
US11737372B2 (en) 2004-03-12 2023-08-22 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
US11968909B2 (en) 2004-03-12 2024-04-23 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
US9123463B2 (en) 2004-03-12 2015-09-01 Japan Science And Technology Agency Magnetic tunnel junction device
US8319263B2 (en) 2004-03-12 2012-11-27 Japan Science And Technology Agency Magnetic tunnel junction device
US11233193B2 (en) 2004-03-12 2022-01-25 Japan Science And Technology Agency Method of manufacturing a magnetorestive random access memeory (MRAM)
US9608198B2 (en) 2004-03-12 2017-03-28 Japan Science And Technology Agency Magnetic tunnel junction device
US8405134B2 (en) 2004-03-12 2013-03-26 Japan Science And Technology Agency Magnetic tunnel junction device
US10680167B2 (en) 2004-03-12 2020-06-09 Japan Science And Technology Agency Magnetic tunnel junction device
JP2009021626A (ja) * 2004-03-12 2009-01-29 Japan Science & Technology Agency 磁気多層膜及び多層構造体
US7804667B2 (en) 2006-05-25 2010-09-28 Tdk Corporation Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
US7672092B2 (en) 2006-06-14 2010-03-02 Tdk Corporation Method for manufacturing magnetic field detecting element, utilizing diffusion of metal
US8391041B2 (en) 2008-11-13 2013-03-05 Renesas Electronics Corporation Magnetic memory device
US8199550B2 (en) 2008-11-13 2012-06-12 Renesas Electronics Corporation Magnetic memory device

Also Published As

Publication number Publication date
US6661689B2 (en) 2003-12-09
TW521426B (en) 2003-02-21
KR100431483B1 (ko) 2004-05-14
US20020080641A1 (en) 2002-06-27
KR20020053752A (ko) 2002-07-05
CN1363955A (zh) 2002-08-14
CN1244154C (zh) 2006-03-01

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