CN1244154C - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

Info

Publication number
CN1244154C
CN1244154C CNB011439599A CN01143959A CN1244154C CN 1244154 C CN1244154 C CN 1244154C CN B011439599 A CNB011439599 A CN B011439599A CN 01143959 A CN01143959 A CN 01143959A CN 1244154 C CN1244154 C CN 1244154C
Authority
CN
China
Prior art keywords
mentioned
semiconductor storage
layer
magnetic element
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011439599A
Other languages
English (en)
Chinese (zh)
Other versions
CN1363955A (zh
Inventor
浅尾吉昭
伊藤洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1363955A publication Critical patent/CN1363955A/zh
Application granted granted Critical
Publication of CN1244154C publication Critical patent/CN1244154C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB011439599A 2000-12-27 2001-12-27 半导体存储装置 Expired - Fee Related CN1244154C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP399223/2000 2000-12-27
JP2000399223 2000-12-27
JP2001373071A JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置
JP373071/2001 2001-12-06

Publications (2)

Publication Number Publication Date
CN1363955A CN1363955A (zh) 2002-08-14
CN1244154C true CN1244154C (zh) 2006-03-01

Family

ID=26606944

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011439599A Expired - Fee Related CN1244154C (zh) 2000-12-27 2001-12-27 半导体存储装置

Country Status (5)

Country Link
US (1) US6661689B2 (OSRAM)
JP (1) JP2002270790A (OSRAM)
KR (1) KR100431483B1 (OSRAM)
CN (1) CN1244154C (OSRAM)
TW (1) TW521426B (OSRAM)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3808799B2 (ja) 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
WO2003098636A2 (en) * 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US6801450B2 (en) * 2002-05-22 2004-10-05 Hewlett-Packard Development Company, L.P. Memory cell isolation
JP4322481B2 (ja) * 2002-08-12 2009-09-02 株式会社東芝 半導体集積回路装置
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP4290494B2 (ja) * 2003-07-08 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
JP4082711B2 (ja) * 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US7099176B2 (en) * 2004-04-19 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Non-orthogonal write line structure in MRAM
US7265053B2 (en) * 2004-04-26 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Trench photolithography rework for removal of photoresist residue
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7170775B2 (en) * 2005-01-06 2007-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current
JP2007317824A (ja) 2006-05-25 2007-12-06 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
JP4384137B2 (ja) 2006-06-14 2009-12-16 Ｔｄｋ株式会社 Ｃｐｐ−ｇｍｒヘッド用の磁界検出素子の製造方法、ｃｐｐ−ｇｍｒヘッド用の磁界検出素子、積層体、ウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置
JP5412640B2 (ja) 2008-11-13 2014-02-12 ルネサスエレクトロニクス株式会社 磁気メモリ装置
CN105449099B (zh) * 2015-10-15 2018-04-06 上海磁宇信息科技有限公司 交叉矩阵列式磁性随机存储器及其读写方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392657B2 (ja) * 1996-09-26 2003-03-31 株式会社東芝 半導体記憶装置
JP4124844B2 (ja) 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
JP3593472B2 (ja) * 1998-06-30 2004-11-24 株式会社東芝 磁気素子とそれを用いた磁気メモリおよび磁気センサ
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP3803503B2 (ja) 1999-04-30 2006-08-02 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP4637388B2 (ja) * 2001-03-23 2011-02-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
US6661689B2 (en) 2003-12-09
TW521426B (en) 2003-02-21
KR100431483B1 (ko) 2004-05-14
US20020080641A1 (en) 2002-06-27
KR20020053752A (ko) 2002-07-05
CN1363955A (zh) 2002-08-14
JP2002270790A (ja) 2002-09-20

Similar Documents

Publication Publication Date Title
CN1244154C (zh) 半导体存储装置
KR100518284B1 (ko) 반도체 기억 장치
US6590244B2 (en) Semiconductor memory device using magneto resistive effect element
CN1283006C (zh) 磁存储装置及其制造方法
US7965542B2 (en) Magnetic random access memory and write method of the same
CN1215464C (zh) 磁记录装置及其制造方法
JP5260040B2 (ja) 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
CN1252841C (zh) 磁阻效应元件和具有该磁阻效应元件的磁存储器
CN1402252A (zh) 磁存储装置
CN100350495C (zh) 具有软基准层的磁阻器件
CN1252728C (zh) 采用soi衬底的磁存储器及其制造方法
JP2005116923A (ja) スピントルクを用いた不揮発性磁気メモリセルおよびこれを用いた磁気ランダムアクセスメモリ
US10783943B2 (en) MRAM having novel self-referenced read method
CN100350496C (zh) 磁存储装置及其制造方法
WO2009128486A1 (ja) 磁気メモリ素子の記録方法
CN1930628A (zh) 用于磁隧道结的独立写入和读取访问构造
CN1851823A (zh) 磁性随机处理存储器装置
JP2015060970A (ja) 磁気抵抗素子および磁気メモリ
JP2008187048A (ja) 磁気抵抗効果素子
JP5141237B2 (ja) 半導体記憶装置、その製造方法、書き込み方法及び読み出し方法
US20100224920A1 (en) Magnetoresistive memory cell and method of manufacturing memory device including the same
CN1505040A (zh) 磁随机存取存储器
WO2019092816A1 (ja) トンネル磁気抵抗効果素子、磁気メモリ、及び内蔵型メモリ
CN100338777C (zh) 使用铁磁隧道结元件的磁存储装置
JP2004079633A (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060301

Termination date: 20121227