JP2002222957A5 - - Google Patents

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Publication number
JP2002222957A5
JP2002222957A5 JP2001019026A JP2001019026A JP2002222957A5 JP 2002222957 A5 JP2002222957 A5 JP 2002222957A5 JP 2001019026 A JP2001019026 A JP 2001019026A JP 2001019026 A JP2001019026 A JP 2001019026A JP 2002222957 A5 JP2002222957 A5 JP 2002222957A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001019026A
Other languages
Japanese (ja)
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JP2002222957A (ja
JP4732599B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001019026A priority Critical patent/JP4732599B2/ja
Priority claimed from JP2001019026A external-priority patent/JP4732599B2/ja
Priority to TW090103830A priority patent/TW479371B/zh
Priority to KR1020010009500A priority patent/KR100704331B1/ko
Priority to US09/791,827 priority patent/US6501095B2/en
Publication of JP2002222957A publication Critical patent/JP2002222957A/ja
Publication of JP2002222957A5 publication Critical patent/JP2002222957A5/ja
Application granted granted Critical
Publication of JP4732599B2 publication Critical patent/JP4732599B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001019026A 2001-01-26 2001-01-26 薄膜トランジスタ装置 Expired - Fee Related JP4732599B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001019026A JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置
TW090103830A TW479371B (en) 2001-01-26 2001-02-20 Thin film transistor
KR1020010009500A KR100704331B1 (ko) 2001-01-26 2001-02-24 박막 트랜지스터 장치
US09/791,827 US6501095B2 (en) 2001-01-26 2001-02-26 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001019026A JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置

Publications (3)

Publication Number Publication Date
JP2002222957A JP2002222957A (ja) 2002-08-09
JP2002222957A5 true JP2002222957A5 (enExample) 2008-03-06
JP4732599B2 JP4732599B2 (ja) 2011-07-27

Family

ID=18884972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001019026A Expired - Fee Related JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置

Country Status (4)

Country Link
US (1) US6501095B2 (enExample)
JP (1) JP4732599B2 (enExample)
KR (1) KR100704331B1 (enExample)
TW (1) TW479371B (enExample)

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US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
KR100611744B1 (ko) 2003-11-22 2006-08-10 삼성에스디아이 주식회사 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법
KR100611225B1 (ko) * 2003-11-22 2006-08-10 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조방법
KR100712101B1 (ko) * 2004-06-30 2007-05-02 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8274073B2 (en) * 2005-03-11 2012-09-25 Spansion Llc Memory device with improved switching speed and data retention
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR100731752B1 (ko) 2005-09-07 2007-06-22 삼성에스디아이 주식회사 박막트랜지스터
JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
JP2009518864A (ja) 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
JP4282699B2 (ja) * 2006-09-01 2009-06-24 株式会社東芝 半導体装置
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
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CN103918065A (zh) 2011-08-10 2014-07-09 恩特格林斯公司 具有视需要氧化钇覆盖层的经AlON涂布的基质
CN102664144B (zh) * 2012-05-18 2015-04-15 北京大学 一种适于锗基器件的界面处理方法
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
JP6471379B2 (ja) 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
TWI683888B (zh) 2015-03-18 2020-02-01 美商恩特葛瑞斯股份有限公司 塗佈有經氟退火膜之物品
JP6655301B2 (ja) * 2015-05-19 2020-02-26 株式会社ブイ・テクノロジー レーザアニール装置及び薄膜トランジスタの製造方法
JP6434872B2 (ja) * 2015-07-31 2018-12-05 東芝メモリ株式会社 半導体装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
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