JP2002222957A5 - - Google Patents

Download PDF

Info

Publication number
JP2002222957A5
JP2002222957A5 JP2001019026A JP2001019026A JP2002222957A5 JP 2002222957 A5 JP2002222957 A5 JP 2002222957A5 JP 2001019026 A JP2001019026 A JP 2001019026A JP 2001019026 A JP2001019026 A JP 2001019026A JP 2002222957 A5 JP2002222957 A5 JP 2002222957A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001019026A
Other versions
JP4732599B2 (ja
JP2002222957A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001019026A priority Critical patent/JP4732599B2/ja
Priority claimed from JP2001019026A external-priority patent/JP4732599B2/ja
Priority to TW090103830A priority patent/TW479371B/zh
Priority to KR1020010009500A priority patent/KR100704331B1/ko
Priority to US09/791,827 priority patent/US6501095B2/en
Publication of JP2002222957A publication Critical patent/JP2002222957A/ja
Publication of JP2002222957A5 publication Critical patent/JP2002222957A5/ja
Application granted granted Critical
Publication of JP4732599B2 publication Critical patent/JP4732599B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001019026A 2001-01-26 2001-01-26 薄膜トランジスタ装置 Expired - Fee Related JP4732599B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001019026A JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置
TW090103830A TW479371B (en) 2001-01-26 2001-02-20 Thin film transistor
KR1020010009500A KR100704331B1 (ko) 2001-01-26 2001-02-24 박막 트랜지스터 장치
US09/791,827 US6501095B2 (en) 2001-01-26 2001-02-26 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001019026A JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置

Publications (3)

Publication Number Publication Date
JP2002222957A JP2002222957A (ja) 2002-08-09
JP2002222957A5 true JP2002222957A5 (ja) 2008-03-06
JP4732599B2 JP4732599B2 (ja) 2011-07-27

Family

ID=18884972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001019026A Expired - Fee Related JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置

Country Status (4)

Country Link
US (1) US6501095B2 (ja)
JP (1) JP4732599B2 (ja)
KR (1) KR100704331B1 (ja)
TW (1) TW479371B (ja)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
JP2003124230A (ja) * 2001-10-12 2003-04-25 Hitachi Ltd 薄膜トランジスタ装置、その製造方法及びこの装置を用いた画像表示装置
KR100483985B1 (ko) * 2001-11-27 2005-04-15 삼성에스디아이 주식회사 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스
US6864520B2 (en) * 2002-04-04 2005-03-08 International Business Machines Corporation Germanium field effect transistor and method of fabricating the same
JP4900756B2 (ja) * 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
KR100483987B1 (ko) * 2002-07-08 2005-04-15 삼성에스디아이 주식회사 티에프티용 다결정 실리콘 박막 및 이를 사용한 디바이스
CN1757093A (zh) 2002-08-19 2006-04-05 纽约市哥伦比亚大学托管会 具有多种照射图形的单步半导体处理系统和方法
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US7341928B2 (en) 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US7745822B2 (en) * 2003-06-27 2010-06-29 Nec Corporation Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
KR100611744B1 (ko) 2003-11-22 2006-08-10 삼성에스디아이 주식회사 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법
KR100611225B1 (ko) * 2003-11-22 2006-08-10 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조방법
KR100712101B1 (ko) * 2004-06-30 2007-05-02 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8274073B2 (en) * 2005-03-11 2012-09-25 Spansion Llc Memory device with improved switching speed and data retention
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR100731752B1 (ko) 2005-09-07 2007-06-22 삼성에스디아이 주식회사 박막트랜지스터
JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
TW200733240A (en) 2005-12-05 2007-09-01 Univ Columbia Systems and methods for processing a film, and thin films
JP4282699B2 (ja) * 2006-09-01 2009-06-24 株式会社東芝 半導体装置
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
CN103354204A (zh) 2007-11-21 2013-10-16 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN103081078A (zh) * 2011-07-05 2013-05-01 松下电器产业株式会社 薄膜晶体管及其制造方法以及显示装置
KR101998440B1 (ko) * 2011-08-10 2019-07-09 엔테그리스, 아이엔씨. 선택적 이트리아 상부층을 가지는 AlON 피복 기판
CN102664144B (zh) * 2012-05-18 2015-04-15 北京大学 一种适于锗基器件的界面处理方法
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
JP6471379B2 (ja) 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
US10961617B2 (en) 2015-03-18 2021-03-30 Entegris, Inc. Articles coated with fluoro-annealed films
JP6655301B2 (ja) * 2015-05-19 2020-02-26 株式会社ブイ・テクノロジー レーザアニール装置及び薄膜トランジスタの製造方法
JP6434872B2 (ja) * 2015-07-31 2018-12-05 東芝メモリ株式会社 半導体装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11164809B2 (en) * 2018-12-17 2021-11-02 Intel Corporation Integrated circuits and methods for forming integrated circuits
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
KR20220042416A (ko) * 2019-08-09 2022-04-05 마이크론 테크놀로지, 인크 트랜지스터 및 트랜지스터의 형성 방법
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2777794B2 (ja) * 1991-08-21 1998-07-23 東陶機器株式会社 トイレ装置
KR100270620B1 (ko) * 1992-10-19 2000-12-01 윤종용 다결정 실리콘 박막의 제조방법
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR0155304B1 (ko) * 1994-12-23 1998-10-15 정선종 다결정 박막 트랜지스터 및 그 제조방법
KR100205069B1 (ko) * 1995-12-21 1999-07-01 정선종 다결정 실리콘 박막 트랜지스터의 제조방법
JPH101994A (ja) * 1996-06-17 1998-01-06 Naoya Suzuki 腰掛便器での男子用排尿介助器
JPH101996A (ja) * 1996-06-18 1998-01-06 Hitachi Home Tec Ltd 衛生洗浄器の火傷防止装置
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料

Similar Documents

Publication Publication Date Title
BE2022C531I2 (ja)
BE2022C502I2 (ja)
BE2017C057I2 (ja)
BE2017C051I2 (ja)
BE2017C032I2 (ja)
BE2016C051I2 (ja)
BE2014C006I2 (ja)
BE2017C050I2 (ja)
JP2002107274A5 (ja)
JP2002222957A5 (ja)
BRPI0209186B1 (ja)
JP2001309299A5 (ja)
CH1379220H1 (ja)
BRPI0204884A2 (ja)
BE2017C059I2 (ja)
JP2002161757A5 (ja)
JP2002152159A5 (ja)
JP2001273113A5 (ja)
JP2002214561A5 (ja)
JP2002116793A5 (ja)
BRPI0101486B8 (ja)
HU0202370D0 (ja)
BRPI0210463A2 (ja)
JP2002100484A5 (ja)
AU2000280389A8 (ja)