JP2002151608A5 - - Google Patents

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Publication number
JP2002151608A5
JP2002151608A5 JP2001284960A JP2001284960A JP2002151608A5 JP 2002151608 A5 JP2002151608 A5 JP 2002151608A5 JP 2001284960 A JP2001284960 A JP 2001284960A JP 2001284960 A JP2001284960 A JP 2001284960A JP 2002151608 A5 JP2002151608 A5 JP 2002151608A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2001284960A
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JP5140219B2 (ja
JP2002151608A (ja
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Priority claimed from US09/916,619 external-priority patent/US6868015B2/en
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Publication of JP2002151608A publication Critical patent/JP2002151608A/ja
Publication of JP2002151608A5 publication Critical patent/JP2002151608A5/ja
Application granted granted Critical
Publication of JP5140219B2 publication Critical patent/JP5140219B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001284960A 2000-09-20 2001-09-19 半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法 Expired - Lifetime JP5140219B2 (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US23398800P 2000-09-20 2000-09-20
US23431400P 2000-09-20 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/234314 2001-07-26
US09/916,619 US6868015B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with control gate spacer portions
US09/916619 2001-07-26
US60/242096 2001-07-26
US60/233988 2001-07-26

Publications (3)

Publication Number Publication Date
JP2002151608A JP2002151608A (ja) 2002-05-24
JP2002151608A5 true JP2002151608A5 (ja) 2008-09-04
JP5140219B2 JP5140219B2 (ja) 2013-02-06

Family

ID=27499707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001284960A Expired - Lifetime JP5140219B2 (ja) 2000-09-20 2001-09-19 半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法

Country Status (6)

Country Link
US (2) US6868015B2 (ja)
EP (1) EP1191585A2 (ja)
JP (1) JP5140219B2 (ja)
KR (1) KR100821495B1 (ja)
CN (1) CN1186820C (ja)
TW (1) TW514994B (ja)

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CN107359163B (zh) * 2016-05-05 2020-06-02 中芯国际集成电路制造（天津）有限公司 存储单元的制备方法
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