JP2001298084A5 - - Google Patents

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Publication number
JP2001298084A5
JP2001298084A5 JP2000113286A JP2000113286A JP2001298084A5 JP 2001298084 A5 JP2001298084 A5 JP 2001298084A5 JP 2000113286 A JP2000113286 A JP 2000113286A JP 2000113286 A JP2000113286 A JP 2000113286A JP 2001298084 A5 JP2001298084 A5 JP 2001298084A5
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JP
Japan
Prior art keywords
semiconductor device
wiring
via hole
width
dual damascene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000113286A
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English (en)
Japanese (ja)
Other versions
JP3819670B2 (ja
JP2001298084A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2000113286A external-priority patent/JP3819670B2/ja
Priority to JP2000113286A priority Critical patent/JP3819670B2/ja
Priority to TW089126464A priority patent/TW468247B/zh
Priority to KR1020000076348A priority patent/KR100669929B1/ko
Priority to US09/735,478 priority patent/US6373136B2/en
Priority to EP01300116.9A priority patent/EP1146558B1/en
Publication of JP2001298084A publication Critical patent/JP2001298084A/ja
Publication of JP2001298084A5 publication Critical patent/JP2001298084A5/ja
Publication of JP3819670B2 publication Critical patent/JP3819670B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000113286A 2000-04-14 2000-04-14 ダマシン配線を有する半導体装置 Expired - Lifetime JP3819670B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000113286A JP3819670B2 (ja) 2000-04-14 2000-04-14 ダマシン配線を有する半導体装置
TW089126464A TW468247B (en) 2000-04-14 2000-12-12 Damascene wiring structure and semiconductor device with damascene wirings
KR1020000076348A KR100669929B1 (ko) 2000-04-14 2000-12-14 반도체 장치
US09/735,478 US6373136B2 (en) 2000-04-14 2000-12-14 Damascene wiring structure and semiconductor device with damascene wirings
EP01300116.9A EP1146558B1 (en) 2000-04-14 2001-01-08 Semiconductor device with damascene wiring structure and method of its fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000113286A JP3819670B2 (ja) 2000-04-14 2000-04-14 ダマシン配線を有する半導体装置

Publications (3)

Publication Number Publication Date
JP2001298084A JP2001298084A (ja) 2001-10-26
JP2001298084A5 true JP2001298084A5 (https=) 2005-06-30
JP3819670B2 JP3819670B2 (ja) 2006-09-13

Family

ID=18625279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000113286A Expired - Lifetime JP3819670B2 (ja) 2000-04-14 2000-04-14 ダマシン配線を有する半導体装置

Country Status (5)

Country Link
US (1) US6373136B2 (https=)
EP (1) EP1146558B1 (https=)
JP (1) JP3819670B2 (https=)
KR (1) KR100669929B1 (https=)
TW (1) TW468247B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222858A (ja) * 2001-01-25 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7224063B2 (en) * 2001-06-01 2007-05-29 International Business Machines Corporation Dual-damascene metallization interconnection
JP4587604B2 (ja) 2001-06-13 2010-11-24 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4948715B2 (ja) * 2001-06-29 2012-06-06 富士通セミコンダクター株式会社 半導体ウエハ装置およびその製造方法
JP4193206B2 (ja) * 2001-07-25 2008-12-10 セイコーエプソン株式会社 半導体薄膜の製造方法、半導体装置の製造方法、半導体装置、集積回路、電気光学装置及び電子機器
JP4929437B2 (ja) * 2001-08-03 2012-05-09 富士通セミコンダクター株式会社 集積回路の配線レイアウト方法
JP2003257970A (ja) 2002-02-27 2003-09-12 Nec Electronics Corp 半導体装置及びその配線構造
JP2003258085A (ja) 2002-02-27 2003-09-12 Fujitsu Ltd 配線構造及びその形成方法
JP2004031439A (ja) 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
NO317845B1 (no) * 2002-11-29 2004-12-20 Thin Film Electronics Asa Mellomlagsforbindelser for lagdelte elektroniske innretninger
AU2003266560A1 (en) 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
US20040173803A1 (en) * 2003-03-05 2004-09-09 Advanced Micro Devices, Inc. Interconnect structure having improved stress migration reliability
JP4068497B2 (ja) * 2003-04-24 2008-03-26 株式会社東芝 半導体装置およびその製造方法
JP4230334B2 (ja) 2003-10-31 2009-02-25 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US9318378B2 (en) * 2004-08-21 2016-04-19 Globalfoundries Singapore Pte. Ltd. Slot designs in wide metal lines
JP2006170923A (ja) * 2004-11-16 2006-06-29 Matsushita Electric Ind Co Ltd 半導体装置評価装置、半導体装置の評価方法および半導体評価デバイスのシミュレータ
JP4731456B2 (ja) 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
US7586132B2 (en) * 2007-06-06 2009-09-08 Micrel, Inc. Power FET with low on-resistance using merged metal layers
JP2011023487A (ja) * 2009-07-14 2011-02-03 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
KR101035258B1 (ko) * 2010-07-20 2011-05-18 주식회사도담엠에스 멀티 보드
CN102593069A (zh) * 2011-01-13 2012-07-18 奇景光电股份有限公司 接合垫结构以及集成电路芯片
JP5904070B2 (ja) * 2012-09-13 2016-04-13 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6255728B2 (ja) * 2013-06-17 2018-01-10 富士通セミコンダクター株式会社 半導体装置、半導体装置の製造方法及び設計プログラム
JP6565509B2 (ja) * 2015-09-08 2019-08-28 セイコーエプソン株式会社 半導体装置及びそれを用いた電子機器
KR102606765B1 (ko) * 2018-02-07 2023-11-27 삼성전자주식회사 비아 플러그를 갖는 반도체 소자 및 그 형성 방법
JP7097139B2 (ja) * 2018-07-26 2022-07-07 京セラ株式会社 配線基板
US11600519B2 (en) * 2019-09-16 2023-03-07 International Business Machines Corporation Skip-via proximity interconnect

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724305B2 (ja) * 1987-04-15 1995-03-15 ロ−ム株式会社 半導体装置
JPH02192146A (ja) * 1989-01-20 1990-07-27 Toshiba Corp 半導体装置
JPH05152299A (ja) 1991-04-15 1993-06-18 Hitachi Ltd 配線構造体
JP2811126B2 (ja) * 1991-05-02 1998-10-15 三菱電機株式会社 半導体集積回路装置の配線接続構造およびその製造方法
US5461260A (en) 1994-08-01 1995-10-24 Motorola Inc. Semiconductor device interconnect layout structure for reducing premature electromigration failure due to high localized current density
US5602423A (en) * 1994-11-01 1997-02-11 Texas Instruments Incorporated Damascene conductors with embedded pillars
US5635418A (en) * 1995-03-23 1997-06-03 Micron Technology, Inc. Method of making a resistor
US5834845A (en) * 1995-09-21 1998-11-10 Advanced Micro Devices, Inc. Interconnect scheme for integrated circuits
JPH09213696A (ja) 1996-02-02 1997-08-15 Hitachi Ltd 半導体装置
KR100215847B1 (ko) * 1996-05-16 1999-08-16 구본준 반도체 장치의 금속 배선 및 그의 형성 방법
US5920790A (en) * 1997-08-29 1999-07-06 Motorola, Inc. Method of forming a semiconductor device having dual inlaid structure
US6093632A (en) * 1998-12-07 2000-07-25 Industrial Technology Research Institute Modified dual damascene process
JP2000277519A (ja) * 1999-03-23 2000-10-06 Toshiba Corp 半導体装置およびその製造方法

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