JP2003224189A5 - - Google Patents

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Publication number
JP2003224189A5
JP2003224189A5 JP2002022245A JP2002022245A JP2003224189A5 JP 2003224189 A5 JP2003224189 A5 JP 2003224189A5 JP 2002022245 A JP2002022245 A JP 2002022245A JP 2002022245 A JP2002022245 A JP 2002022245A JP 2003224189 A5 JP2003224189 A5 JP 2003224189A5
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JP
Japan
Prior art keywords
active region
integrated circuit
circuit device
semiconductor integrated
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002022245A
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English (en)
Japanese (ja)
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JP2003224189A (ja
JP4274730B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2002022245A priority Critical patent/JP4274730B2/ja
Priority claimed from JP2002022245A external-priority patent/JP4274730B2/ja
Priority to US10/193,150 priority patent/US6642540B2/en
Publication of JP2003224189A publication Critical patent/JP2003224189A/ja
Publication of JP2003224189A5 publication Critical patent/JP2003224189A5/ja
Application granted granted Critical
Publication of JP4274730B2 publication Critical patent/JP4274730B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002022245A 2002-01-30 2002-01-30 半導体集積回路装置 Expired - Fee Related JP4274730B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002022245A JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置
US10/193,150 US6642540B2 (en) 2002-01-30 2002-07-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002022245A JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2003224189A JP2003224189A (ja) 2003-08-08
JP2003224189A5 true JP2003224189A5 (https=) 2005-08-18
JP4274730B2 JP4274730B2 (ja) 2009-06-10

Family

ID=27606340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002022245A Expired - Fee Related JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置

Country Status (2)

Country Link
US (1) US6642540B2 (https=)
JP (1) JP4274730B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195650A1 (en) * 2003-04-04 2004-10-07 Tsung-Ju Yang High-Q inductor device with a shielding pattern embedded in a substrate
JP4250038B2 (ja) * 2003-08-20 2009-04-08 シャープ株式会社 半導体集積回路
JP2005236033A (ja) * 2004-02-19 2005-09-02 Mitsubishi Electric Corp 半導体装置
JP4768972B2 (ja) * 2004-05-31 2011-09-07 ルネサスエレクトロニクス株式会社 インダクタ
JP2006216664A (ja) * 2005-02-02 2006-08-17 Renesas Technology Corp 半導体装置
US7427801B2 (en) * 2005-04-08 2008-09-23 International Business Machines Corporation Integrated circuit transformer devices for on-chip millimeter-wave applications
JP2006332079A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 半導体集積回路
KR100723490B1 (ko) * 2005-07-12 2007-06-04 삼성전자주식회사 전자파 방해가 개선된 패턴을 구비한 테이프 배선기판
JP5650878B2 (ja) * 2007-06-20 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． ダミーパターンの設計方法、露光マスク、半導体装置、半導体装置の製造方法およびダミーパターンの設計プログラム
US7652355B2 (en) * 2007-08-01 2010-01-26 Chartered Semiconductor Manufacturing, Ltd. Integrated circuit shield structure
US8466536B2 (en) 2010-10-14 2013-06-18 Advanced Micro Devices, Inc. Shield-modulated tunable inductor device
US9048019B2 (en) * 2011-09-27 2015-06-02 Infineon Technologies Ag Semiconductor structure including guard ring
US8806415B1 (en) 2013-02-15 2014-08-12 International Business Machines Corporation Integrated circuit pad modeling
JP6089852B2 (ja) 2013-03-25 2017-03-08 富士通株式会社 半導体装置
JP6808565B2 (ja) * 2017-04-07 2021-01-06 ルネサスエレクトロニクス株式会社 半導体装置、それを備えた電子回路、及び、半導体装置の形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4858184A (en) * 1987-04-27 1989-08-15 Hitachi, Ltd. Radiation resistant bipolar memory
JP3211756B2 (ja) * 1997-12-04 2001-09-25 日本電気株式会社 半導体集積回路装置
JP3851738B2 (ja) 1999-01-29 2006-11-29 株式会社東芝 半導体装置
US6225674B1 (en) * 1999-04-02 2001-05-01 Motorola, Inc. Semiconductor structure and method of manufacture
JP2000299319A (ja) 1999-04-13 2000-10-24 Nec Corp 半導体素子用電極パッド、半導体装置及びその製造方法
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置

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