JP4274730B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4274730B2
JP4274730B2 JP2002022245A JP2002022245A JP4274730B2 JP 4274730 B2 JP4274730 B2 JP 4274730B2 JP 2002022245 A JP2002022245 A JP 2002022245A JP 2002022245 A JP2002022245 A JP 2002022245A JP 4274730 B2 JP4274730 B2 JP 4274730B2
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Japan
Prior art keywords
active region
pad
integrated circuit
semiconductor integrated
circuit device
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Expired - Fee Related
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JP2002022245A
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English (en)
Japanese (ja)
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JP2003224189A (ja
JP2003224189A5 (https=
Inventor
浩史 小紫
和也 山本
久恭 佐藤
秀幸 若田
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002022245A priority Critical patent/JP4274730B2/ja
Priority to US10/193,150 priority patent/US6642540B2/en
Publication of JP2003224189A publication Critical patent/JP2003224189A/ja
Publication of JP2003224189A5 publication Critical patent/JP2003224189A5/ja
Application granted granted Critical
Publication of JP4274730B2 publication Critical patent/JP4274730B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/423—Shielding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002022245A 2002-01-30 2002-01-30 半導体集積回路装置 Expired - Fee Related JP4274730B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002022245A JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置
US10/193,150 US6642540B2 (en) 2002-01-30 2002-07-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002022245A JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2003224189A JP2003224189A (ja) 2003-08-08
JP2003224189A5 JP2003224189A5 (https=) 2005-08-18
JP4274730B2 true JP4274730B2 (ja) 2009-06-10

Family

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Family Applications (1)

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JP2002022245A Expired - Fee Related JP4274730B2 (ja) 2002-01-30 2002-01-30 半導体集積回路装置

Country Status (2)

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US (1) US6642540B2 (https=)
JP (1) JP4274730B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195650A1 (en) * 2003-04-04 2004-10-07 Tsung-Ju Yang High-Q inductor device with a shielding pattern embedded in a substrate
JP4250038B2 (ja) * 2003-08-20 2009-04-08 シャープ株式会社 半導体集積回路
JP2005236033A (ja) * 2004-02-19 2005-09-02 Mitsubishi Electric Corp 半導体装置
JP4768972B2 (ja) * 2004-05-31 2011-09-07 ルネサスエレクトロニクス株式会社 インダクタ
JP2006216664A (ja) * 2005-02-02 2006-08-17 Renesas Technology Corp 半導体装置
US7427801B2 (en) * 2005-04-08 2008-09-23 International Business Machines Corporation Integrated circuit transformer devices for on-chip millimeter-wave applications
JP2006332079A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 半導体集積回路
KR100723490B1 (ko) * 2005-07-12 2007-06-04 삼성전자주식회사 전자파 방해가 개선된 패턴을 구비한 테이프 배선기판
JP5650878B2 (ja) * 2007-06-20 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． ダミーパターンの設計方法、露光マスク、半導体装置、半導体装置の製造方法およびダミーパターンの設計プログラム
US7652355B2 (en) * 2007-08-01 2010-01-26 Chartered Semiconductor Manufacturing, Ltd. Integrated circuit shield structure
US8466536B2 (en) 2010-10-14 2013-06-18 Advanced Micro Devices, Inc. Shield-modulated tunable inductor device
US9048019B2 (en) * 2011-09-27 2015-06-02 Infineon Technologies Ag Semiconductor structure including guard ring
US8806415B1 (en) 2013-02-15 2014-08-12 International Business Machines Corporation Integrated circuit pad modeling
JP6089852B2 (ja) 2013-03-25 2017-03-08 富士通株式会社 半導体装置
JP6808565B2 (ja) * 2017-04-07 2021-01-06 ルネサスエレクトロニクス株式会社 半導体装置、それを備えた電子回路、及び、半導体装置の形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4858184A (en) * 1987-04-27 1989-08-15 Hitachi, Ltd. Radiation resistant bipolar memory
JP3211756B2 (ja) * 1997-12-04 2001-09-25 日本電気株式会社 半導体集積回路装置
JP3851738B2 (ja) 1999-01-29 2006-11-29 株式会社東芝 半導体装置
US6225674B1 (en) * 1999-04-02 2001-05-01 Motorola, Inc. Semiconductor structure and method of manufacture
JP2000299319A (ja) 1999-04-13 2000-10-24 Nec Corp 半導体素子用電極パッド、半導体装置及びその製造方法
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置

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Publication number Publication date
JP2003224189A (ja) 2003-08-08
US20030141501A1 (en) 2003-07-31
US6642540B2 (en) 2003-11-04

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