KR100669929B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100669929B1
KR100669929B1 KR1020000076348A KR20000076348A KR100669929B1 KR 100669929 B1 KR100669929 B1 KR 100669929B1 KR 1020000076348 A KR1020000076348 A KR 1020000076348A KR 20000076348 A KR20000076348 A KR 20000076348A KR 100669929 B1 KR100669929 B1 KR 100669929B1
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KR
South Korea
Prior art keywords
wiring
via hole
layer
width
wiring groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020000076348A
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English (en)
Korean (ko)
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KR20010096529A (ko
Inventor
오쓰까사또시
야마노우에아끼라
Original Assignee
후지쯔 가부시끼가이샤
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Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20010096529A publication Critical patent/KR20010096529A/ko
Application granted granted Critical
Publication of KR100669929B1 publication Critical patent/KR100669929B1/ko
Assigned to 후지쯔 세미컨덕터 가부시키가이샤 reassignment 후지쯔 세미컨덕터 가부시키가이샤 권리의 전부이전등록 Assignors: 후지쯔 가부시끼가이샤
Assigned to 후지쯔 세미컨덕터 가부시키가이샤 reassignment 후지쯔 세미컨덕터 가부시키가이샤 권리의 전부이전등록 Assignors: 후지쯔 세미컨덕터 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020000076348A 2000-04-14 2000-12-14 반도체 장치 Expired - Lifetime KR100669929B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000113286A JP3819670B2 (ja) 2000-04-14 2000-04-14 ダマシン配線を有する半導体装置
JP2000-113286 2000-04-14

Publications (2)

Publication Number Publication Date
KR20010096529A KR20010096529A (ko) 2001-11-07
KR100669929B1 true KR100669929B1 (ko) 2007-01-17

Family

ID=18625279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000076348A Expired - Lifetime KR100669929B1 (ko) 2000-04-14 2000-12-14 반도체 장치

Country Status (5)

Country Link
US (1) US6373136B2 (https=)
EP (1) EP1146558B1 (https=)
JP (1) JP3819670B2 (https=)
KR (1) KR100669929B1 (https=)
TW (1) TW468247B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222858A (ja) * 2001-01-25 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7224063B2 (en) * 2001-06-01 2007-05-29 International Business Machines Corporation Dual-damascene metallization interconnection
JP4587604B2 (ja) 2001-06-13 2010-11-24 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4948715B2 (ja) * 2001-06-29 2012-06-06 富士通セミコンダクター株式会社 半導体ウエハ装置およびその製造方法
JP4193206B2 (ja) * 2001-07-25 2008-12-10 セイコーエプソン株式会社 半導体薄膜の製造方法、半導体装置の製造方法、半導体装置、集積回路、電気光学装置及び電子機器
JP4929437B2 (ja) * 2001-08-03 2012-05-09 富士通セミコンダクター株式会社 集積回路の配線レイアウト方法
JP2003257970A (ja) 2002-02-27 2003-09-12 Nec Electronics Corp 半導体装置及びその配線構造
JP2003258085A (ja) 2002-02-27 2003-09-12 Fujitsu Ltd 配線構造及びその形成方法
JP2004031439A (ja) 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
NO317845B1 (no) * 2002-11-29 2004-12-20 Thin Film Electronics Asa Mellomlagsforbindelser for lagdelte elektroniske innretninger
AU2003266560A1 (en) 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
US20040173803A1 (en) * 2003-03-05 2004-09-09 Advanced Micro Devices, Inc. Interconnect structure having improved stress migration reliability
JP4068497B2 (ja) * 2003-04-24 2008-03-26 株式会社東芝 半導体装置およびその製造方法
JP4230334B2 (ja) 2003-10-31 2009-02-25 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US9318378B2 (en) * 2004-08-21 2016-04-19 Globalfoundries Singapore Pte. Ltd. Slot designs in wide metal lines
JP2006170923A (ja) * 2004-11-16 2006-06-29 Matsushita Electric Ind Co Ltd 半導体装置評価装置、半導体装置の評価方法および半導体評価デバイスのシミュレータ
JP4731456B2 (ja) 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
US7586132B2 (en) * 2007-06-06 2009-09-08 Micrel, Inc. Power FET with low on-resistance using merged metal layers
JP2011023487A (ja) * 2009-07-14 2011-02-03 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
KR101035258B1 (ko) * 2010-07-20 2011-05-18 주식회사도담엠에스 멀티 보드
CN102593069A (zh) * 2011-01-13 2012-07-18 奇景光电股份有限公司 接合垫结构以及集成电路芯片
JP5904070B2 (ja) * 2012-09-13 2016-04-13 富士通セミコンダクター株式会社 半導体装置の製造方法
JP6255728B2 (ja) * 2013-06-17 2018-01-10 富士通セミコンダクター株式会社 半導体装置、半導体装置の製造方法及び設計プログラム
JP6565509B2 (ja) * 2015-09-08 2019-08-28 セイコーエプソン株式会社 半導体装置及びそれを用いた電子機器
KR102606765B1 (ko) * 2018-02-07 2023-11-27 삼성전자주식회사 비아 플러그를 갖는 반도체 소자 및 그 형성 방법
JP7097139B2 (ja) * 2018-07-26 2022-07-07 京セラ株式会社 配線基板
US11600519B2 (en) * 2019-09-16 2023-03-07 International Business Machines Corporation Skip-via proximity interconnect

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724305B2 (ja) * 1987-04-15 1995-03-15 ロ−ム株式会社 半導体装置
JPH02192146A (ja) * 1989-01-20 1990-07-27 Toshiba Corp 半導体装置
JPH05152299A (ja) 1991-04-15 1993-06-18 Hitachi Ltd 配線構造体
JP2811126B2 (ja) * 1991-05-02 1998-10-15 三菱電機株式会社 半導体集積回路装置の配線接続構造およびその製造方法
US5461260A (en) 1994-08-01 1995-10-24 Motorola Inc. Semiconductor device interconnect layout structure for reducing premature electromigration failure due to high localized current density
US5602423A (en) * 1994-11-01 1997-02-11 Texas Instruments Incorporated Damascene conductors with embedded pillars
US5635418A (en) * 1995-03-23 1997-06-03 Micron Technology, Inc. Method of making a resistor
US5834845A (en) * 1995-09-21 1998-11-10 Advanced Micro Devices, Inc. Interconnect scheme for integrated circuits
JPH09213696A (ja) 1996-02-02 1997-08-15 Hitachi Ltd 半導体装置
KR100215847B1 (ko) * 1996-05-16 1999-08-16 구본준 반도체 장치의 금속 배선 및 그의 형성 방법
US5920790A (en) * 1997-08-29 1999-07-06 Motorola, Inc. Method of forming a semiconductor device having dual inlaid structure
US6093632A (en) * 1998-12-07 2000-07-25 Industrial Technology Research Institute Modified dual damascene process
JP2000277519A (ja) * 1999-03-23 2000-10-06 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP1146558B1 (en) 2016-06-01
US6373136B2 (en) 2002-04-16
JP3819670B2 (ja) 2006-09-13
KR20010096529A (ko) 2001-11-07
JP2001298084A (ja) 2001-10-26
EP1146558A3 (en) 2003-11-05
EP1146558A2 (en) 2001-10-17
US20010030365A1 (en) 2001-10-18
TW468247B (en) 2001-12-11

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