JP2001250776A5 - - Google Patents

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Publication number
JP2001250776A5
JP2001250776A5 JP2000062066A JP2000062066A JP2001250776A5 JP 2001250776 A5 JP2001250776 A5 JP 2001250776A5 JP 2000062066 A JP2000062066 A JP 2000062066A JP 2000062066 A JP2000062066 A JP 2000062066A JP 2001250776 A5 JP2001250776 A5 JP 2001250776A5
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JP
Japan
Prior art keywords
amorphous
semiconductor film
semiconductor
applying
temperature
Prior art date
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Granted
Application number
JP2000062066A
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English (en)
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JP2001250776A (ja
JP4057215B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2000062066A external-priority patent/JP4057215B2/ja
Priority to JP2000062066A priority Critical patent/JP4057215B2/ja
Priority to KR10-2001-0011351A priority patent/KR100411321B1/ko
Priority to US09/799,110 priority patent/US6812071B2/en
Priority to TW090105088A priority patent/TW499763B/zh
Priority to CNB011109513A priority patent/CN1196200C/zh
Publication of JP2001250776A publication Critical patent/JP2001250776A/ja
Publication of JP2001250776A5 publication Critical patent/JP2001250776A5/ja
Publication of JP4057215B2 publication Critical patent/JP4057215B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (1)

  1. 前記高純度化工程では、前記高純度化工程において、前記非晶質の半導体膜を熱処理する際に、前記非晶質の半導体膜において前記基板に隣接する領域の温度を、前記非晶質の半導体膜における上部表面層の温度より低くすること、前記非晶質の半導体膜に電界を印加すること、前記非晶質の半導体膜に磁界を印加することおよび前記非晶質の半導体膜に遠心力を加えることかなる群から選択される少なくとも２つを実施する、請求項６に記載の半導体装置の製造方法。
JP2000062066A 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法 Expired - Fee Related JP4057215B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000062066A JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法
KR10-2001-0011351A KR100411321B1 (ko) 2000-03-07 2001-03-06 박막 전계 효과 트랜지스터를 구비한 반도체 장치 및 그제조 방법
US09/799,110 US6812071B2 (en) 2000-03-07 2001-03-06 Method of producing crystalline semiconductor film and semiconductor device from the film
TW090105088A TW499763B (en) 2000-03-07 2001-03-06 Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof
CNB011109513A CN1196200C (zh) 2000-03-07 2001-03-07 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000062066A JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001250776A JP2001250776A (ja) 2001-09-14
JP2001250776A5 true JP2001250776A5 (ja) 2004-12-09
JP4057215B2 JP4057215B2 (ja) 2008-03-05

Family

ID=18582125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000062066A Expired - Fee Related JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法

Country Status (5)

Country Link
US (1) US6812071B2 (ja)
JP (1) JP4057215B2 (ja)
KR (1) KR100411321B1 (ja)
CN (1) CN1196200C (ja)
TW (1) TW499763B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR100831227B1 (ko) * 2001-12-17 2008-05-21 삼성전자주식회사 다결정 규소를 이용한 박막 트랜지스터의 제조 방법
JP4271413B2 (ja) 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005276944A (ja) * 2004-03-23 2005-10-06 Sharp Corp 半導体デバイス、その製造方法および製造装置
JP2006190897A (ja) * 2005-01-07 2006-07-20 Sharp Corp 半導体デバイス、その製造方法および製造装置
US20080237593A1 (en) * 2005-01-07 2008-10-02 Junichiro Nakayama Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
WO2006117954A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4732219B2 (ja) * 2006-04-03 2011-07-27 相模サーボ株式会社 高純度シリコン製造方法及び高純度シリコン製造装置
JP4656441B2 (ja) * 2007-03-29 2011-03-23 株式会社日本製鋼所 薄膜の結晶化方法および結晶化装置
US7781076B2 (en) * 2007-06-26 2010-08-24 Eastman Kodak Company Heteropyrene-based semiconductor materials for electronic devices and methods of making the same
CN105097667B (zh) * 2015-06-24 2018-03-30 深圳市华星光电技术有限公司 低温多晶硅tft基板结构的制作方法及低温多晶硅tft基板结构
JP7213726B2 (ja) * 2019-03-13 2023-01-27 東京エレクトロン株式会社 成膜方法及び熱処理装置
CN111584362B (zh) * 2020-05-14 2023-08-22 Tcl华星光电技术有限公司 一种半导体器件制程方法、半导体器件及显示面板

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JPS6046022A (ja) * 1983-08-23 1985-03-12 Sumitomo Electric Ind Ltd イオン注入用基板の前処理方法
JPS62262431A (ja) * 1986-05-08 1987-11-14 Fujitsu Ltd 半導体装置の製造方法
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
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US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
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