JP2001110750A5 - - Google Patents
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- Publication number
- JP2001110750A5 JP2001110750A5 JP1999279609A JP27960999A JP2001110750A5 JP 2001110750 A5 JP2001110750 A5 JP 2001110750A5 JP 1999279609 A JP1999279609 A JP 1999279609A JP 27960999 A JP27960999 A JP 27960999A JP 2001110750 A5 JP2001110750 A5 JP 2001110750A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- annealing
- gas
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007789 gas Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 238000000137 annealing Methods 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 16
- 229910021342 tungsten silicide Inorganic materials 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27960999A JP2001110750A (ja) | 1999-09-30 | 1999-09-30 | タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法 |
| TW089120316A TW469517B (en) | 1999-09-30 | 2000-09-29 | Formation method of tungsten silicide film and manufacturing method of metal-insulating film-semiconductor type transistor |
| EP00962996A EP1156517A1 (en) | 1999-09-30 | 2000-09-29 | Method for forming tungsten silicide film and method for fabricating metal-insulator-semiconductor transistor |
| PCT/JP2000/006791 WO2001024238A1 (fr) | 1999-09-30 | 2000-09-29 | Procede de formation de films de siliciure de tungstene et procede de fabrication de transistors metal-isolant-semi-conducteur |
| KR1020017006766A KR20010080635A (ko) | 1999-09-30 | 2000-09-29 | 텅스텐 실리사이드막을 형성하여 금속-절연막-반도체형트랜지스터를 제조하는 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27960999A JP2001110750A (ja) | 1999-09-30 | 1999-09-30 | タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001110750A JP2001110750A (ja) | 2001-04-20 |
| JP2001110750A5 true JP2001110750A5 (enExample) | 2006-11-16 |
Family
ID=17613378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27960999A Withdrawn JP2001110750A (ja) | 1999-09-30 | 1999-09-30 | タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1156517A1 (enExample) |
| JP (1) | JP2001110750A (enExample) |
| KR (1) | KR20010080635A (enExample) |
| TW (1) | TW469517B (enExample) |
| WO (1) | WO2001024238A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6827796B2 (en) * | 2000-11-02 | 2004-12-07 | Composite Tool Company, Inc. | High strength alloys and methods for making same |
| KR100669141B1 (ko) | 2005-01-17 | 2007-01-15 | 삼성전자주식회사 | 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법 |
| KR100680969B1 (ko) * | 2005-08-18 | 2007-02-09 | 주식회사 하이닉스반도체 | 텅스텐실리사이드 박막 형성방법 |
| TWI395254B (zh) * | 2006-01-25 | 2013-05-01 | Air Water Inc | Film forming device |
| TWI341012B (en) | 2007-09-03 | 2011-04-21 | Macronix Int Co Ltd | Methods of forming nitride read only memory and word lines thereof |
| JP2011258811A (ja) * | 2010-06-10 | 2011-12-22 | Ulvac Japan Ltd | 半導体装置の製造方法 |
| KR101035738B1 (ko) * | 2011-02-24 | 2011-05-20 | 주식회사 문라이트 | 보행자 및 자전거 도로용 조명기구 |
| KR102349420B1 (ko) | 2015-02-17 | 2022-01-10 | 삼성전자 주식회사 | 메탈 실리사이드층 형성방법 및 그 방법을 이용한 반도체 소자의 제조방법 |
| JP2017022377A (ja) | 2015-07-14 | 2017-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2657306B2 (ja) * | 1988-07-29 | 1997-09-24 | 東京エレクトロン株式会社 | 金属シリサイド膜の形成方法 |
| JPH06216066A (ja) * | 1993-01-14 | 1994-08-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE69518710T2 (de) * | 1994-09-27 | 2001-05-23 | Applied Materials Inc | Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer |
| EP0746027A3 (en) * | 1995-05-03 | 1998-04-01 | Applied Materials, Inc. | Polysilicon/tungsten silicide multilayer composite formed on an integrated circuit structure, and improved method of making same |
| JPH0917998A (ja) * | 1995-06-28 | 1997-01-17 | Sony Corp | Ｍｏｓトランジスタの製造方法 |
-
1999
- 1999-09-30 JP JP27960999A patent/JP2001110750A/ja not_active Withdrawn
-
2000
- 2000-09-29 KR KR1020017006766A patent/KR20010080635A/ko not_active Ceased
- 2000-09-29 WO PCT/JP2000/006791 patent/WO2001024238A1/ja not_active Ceased
- 2000-09-29 EP EP00962996A patent/EP1156517A1/en not_active Withdrawn
- 2000-09-29 TW TW089120316A patent/TW469517B/zh not_active IP Right Cessation
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