KR20010080635A - 텅스텐 실리사이드막을 형성하여 금속-절연막-반도체형트랜지스터를 제조하는 방법 - Google Patents
텅스텐 실리사이드막을 형성하여 금속-절연막-반도체형트랜지스터를 제조하는 방법 Download PDFInfo
- Publication number
- KR20010080635A KR20010080635A KR1020017006766A KR20017006766A KR20010080635A KR 20010080635 A KR20010080635 A KR 20010080635A KR 1020017006766 A KR1020017006766 A KR 1020017006766A KR 20017006766 A KR20017006766 A KR 20017006766A KR 20010080635 A KR20010080635 A KR 20010080635A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- tungsten silicide
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 title claims description 61
- 229910021342 tungsten silicide Inorganic materials 0.000 title claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 25
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- 239000000470 constituent Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 abstract description 45
- 230000015572 biosynthetic process Effects 0.000 abstract description 29
- 230000008859 change Effects 0.000 abstract description 13
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 67
- 239000010410 layer Substances 0.000 description 39
- 238000012545 processing Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
- H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
- H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27960999A JP2001110750A (ja) | 1999-09-30 | 1999-09-30 | タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法 |
| JP1999-279609 | 1999-09-30 | ||
| PCT/JP2000/006791 WO2001024238A1 (fr) | 1999-09-30 | 2000-09-29 | Procede de formation de films de siliciure de tungstene et procede de fabrication de transistors metal-isolant-semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010080635A true KR20010080635A (ko) | 2001-08-22 |
Family
ID=17613378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020017006766A Ceased KR20010080635A (ko) | 1999-09-30 | 2000-09-29 | 텅스텐 실리사이드막을 형성하여 금속-절연막-반도체형트랜지스터를 제조하는 방법 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1156517A1 (enExample) |
| JP (1) | JP2001110750A (enExample) |
| KR (1) | KR20010080635A (enExample) |
| TW (1) | TW469517B (enExample) |
| WO (1) | WO2001024238A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100669141B1 (ko) * | 2005-01-17 | 2007-01-15 | 삼성전자주식회사 | 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법 |
| KR100680969B1 (ko) * | 2005-08-18 | 2007-02-09 | 주식회사 하이닉스반도체 | 텅스텐실리사이드 박막 형성방법 |
| KR101035738B1 (ko) * | 2011-02-24 | 2011-05-20 | 주식회사 문라이트 | 보행자 및 자전거 도로용 조명기구 |
| US9685527B2 (en) | 2015-02-17 | 2017-06-20 | Samsung Electronics Co., Ltd. | Methods of forming metal silicide layers including dopant segregation |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002044437A2 (en) * | 2000-11-02 | 2002-06-06 | Composite Tool Company, Inc. | High strength alloys and methods for making same |
| TWI395254B (zh) * | 2006-01-25 | 2013-05-01 | Air Water Inc | Film forming device |
| TWI341012B (en) | 2007-09-03 | 2011-04-21 | Macronix Int Co Ltd | Methods of forming nitride read only memory and word lines thereof |
| JP2011258811A (ja) * | 2010-06-10 | 2011-12-22 | Ulvac Japan Ltd | 半導体装置の製造方法 |
| JP2017022377A (ja) | 2015-07-14 | 2017-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2657306B2 (ja) * | 1988-07-29 | 1997-09-24 | 東京エレクトロン株式会社 | 金属シリサイド膜の形成方法 |
| JPH06216066A (ja) * | 1993-01-14 | 1994-08-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| EP0704551B1 (en) * | 1994-09-27 | 2000-09-06 | Applied Materials, Inc. | Method of processing a substrate in a vacuum processing chamber |
| EP0746027A3 (en) * | 1995-05-03 | 1998-04-01 | Applied Materials, Inc. | Polysilicon/tungsten silicide multilayer composite formed on an integrated circuit structure, and improved method of making same |
| JPH0917998A (ja) * | 1995-06-28 | 1997-01-17 | Sony Corp | Ｍｏｓトランジスタの製造方法 |
-
1999
- 1999-09-30 JP JP27960999A patent/JP2001110750A/ja not_active Withdrawn
-
2000
- 2000-09-29 KR KR1020017006766A patent/KR20010080635A/ko not_active Ceased
- 2000-09-29 TW TW089120316A patent/TW469517B/zh not_active IP Right Cessation
- 2000-09-29 WO PCT/JP2000/006791 patent/WO2001024238A1/ja not_active Ceased
- 2000-09-29 EP EP00962996A patent/EP1156517A1/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100669141B1 (ko) * | 2005-01-17 | 2007-01-15 | 삼성전자주식회사 | 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법 |
| US7544597B2 (en) | 2005-01-17 | 2009-06-09 | Samsung Electronics Co., Ltd. | Method of forming a semiconductor device including an ohmic layer |
| US7875939B2 (en) | 2005-01-17 | 2011-01-25 | Samsung Electronics Co., Ltd. | Semiconductor device including an ohmic layer |
| KR100680969B1 (ko) * | 2005-08-18 | 2007-02-09 | 주식회사 하이닉스반도체 | 텅스텐실리사이드 박막 형성방법 |
| KR101035738B1 (ko) * | 2011-02-24 | 2011-05-20 | 주식회사 문라이트 | 보행자 및 자전거 도로용 조명기구 |
| US9685527B2 (en) | 2015-02-17 | 2017-06-20 | Samsung Electronics Co., Ltd. | Methods of forming metal silicide layers including dopant segregation |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1156517A1 (en) | 2001-11-21 |
| WO2001024238A1 (fr) | 2001-04-05 |
| TW469517B (en) | 2001-12-21 |
| JP2001110750A (ja) | 2001-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20010530 Patent event code: PA01051R01D Comment text: International Patent Application |
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| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20010531 Comment text: Request for Examination of Application |
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| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20030523 Patent event code: PE09021S01D |
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| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20030807 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20030523 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |