JP2001085625A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2001085625A
JP2001085625A JP25946099A JP25946099A JP2001085625A JP 2001085625 A JP2001085625 A JP 2001085625A JP 25946099 A JP25946099 A JP 25946099A JP 25946099 A JP25946099 A JP 25946099A JP 2001085625 A JP2001085625 A JP 2001085625A
Authority
JP
Japan
Prior art keywords
misfet
integrated circuit
semiconductor integrated
circuit device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25946099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001085625A5 (https=
Inventor
Kazuhisa Suzuki
和久 鈴木
Toshiro Takahashi
敏郎 高橋
Yasunobu Yanagisawa
泰伸 柳沢
Yusuke Nonaka
裕介 野中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP25946099A priority Critical patent/JP2001085625A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to KR1020000053073A priority patent/KR100843272B1/ko
Priority to TW089118476A priority patent/TW480708B/zh
Priority to US09/661,372 priority patent/US6433398B1/en
Priority to US09/698,165 priority patent/US6423588B1/en
Publication of JP2001085625A publication Critical patent/JP2001085625A/ja
Priority to US10/142,062 priority patent/US6538293B2/en
Priority to US10/358,276 priority patent/US6661062B2/en
Priority to US10/648,302 priority patent/US6864549B2/en
Publication of JP2001085625A5 publication Critical patent/JP2001085625A5/ja
Priority to KR1020060138404A priority patent/KR100840282B1/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP25946099A 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法 Pending JP2001085625A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP25946099A JP2001085625A (ja) 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法
KR1020000053073A KR100843272B1 (ko) 1999-09-13 2000-09-07 반도체 집적회로장치
TW089118476A TW480708B (en) 1999-09-13 2000-09-08 Semiconductor integrated circuit device and fabrication method thereof
US09/661,372 US6433398B1 (en) 1999-09-13 2000-09-13 Semiconductor integrated circuit device
US09/698,165 US6423588B1 (en) 1999-09-13 2000-10-30 Method of manufacturing semiconductor integrated circuit device
US10/142,062 US6538293B2 (en) 1999-09-13 2002-05-10 Semiconductor integrated circuit device and method of manufacturing the same
US10/358,276 US6661062B2 (en) 1999-09-13 2003-02-05 Semiconductor integrated circuit device and method of manufacturing the same
US10/648,302 US6864549B2 (en) 1999-09-13 2003-08-27 Semiconductor integrated circuit device and method of manufacturing the same
KR1020060138404A KR100840282B1 (ko) 1999-09-13 2006-12-29 반도체 집적회로장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25946099A JP2001085625A (ja) 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003357520A Division JP4565825B2 (ja) 2003-10-17 2003-10-17 半導体集積回路装置の製造方法
JP2007125356A Division JP4708388B2 (ja) 2007-05-10 2007-05-10 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001085625A true JP2001085625A (ja) 2001-03-30
JP2001085625A5 JP2001085625A5 (https=) 2006-03-30

Family

ID=17334386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25946099A Pending JP2001085625A (ja) 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (5) US6433398B1 (https=)
JP (1) JP2001085625A (https=)
KR (2) KR100843272B1 (https=)
TW (1) TW480708B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003012872A1 (fr) * 2001-07-31 2003-02-13 Hitachi, Ltd. Dispositif a circuit integre a semi-conducteur
US7671384B2 (en) 2003-06-10 2010-03-02 Fujitsu Microelectronics Limited Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a high-voltage transistor
KR101036158B1 (ko) 2003-07-29 2011-05-23 매그나칩 반도체 유한회사 Ｓｒａｍ 및 로직 복합 소자의 제조 방법
CN116759459A (zh) * 2023-08-18 2023-09-15 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
JP4083397B2 (ja) * 2001-06-18 2008-04-30 株式会社ルネサステクノロジ 半導体集積回路装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
JP4340040B2 (ja) * 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4190791B2 (ja) 2002-04-12 2008-12-03 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
US6966399B2 (en) * 2002-11-26 2005-11-22 Yamaha Motor Corporation, U.S.A. Small vehicle with power steering assembly
JP2005064165A (ja) * 2003-08-11 2005-03-10 Hitachi Ltd 半導体集積回路装置
JP4687066B2 (ja) * 2004-10-25 2011-05-25 株式会社デンソー パワーｉｃ
JP5001522B2 (ja) * 2005-04-20 2012-08-15 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7960810B2 (en) 2006-09-05 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof
JP2008177491A (ja) * 2007-01-22 2008-07-31 Renesas Technology Corp 半導体装置
US7902882B2 (en) * 2008-12-29 2011-03-08 Daniele Vimercati Apparatus including a follower output buffer having an output impedance that adapts to a transmission line impedance
US20100187611A1 (en) * 2009-01-27 2010-07-29 Roberto Schiwon Contacts in Semiconductor Devices
US9240417B1 (en) * 2014-08-27 2016-01-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61232656A (ja) * 1985-04-09 1986-10-16 Citizen Watch Co Ltd 半導体集積回路
JPH05235289A (ja) 1992-02-19 1993-09-10 Hitachi Ltd 半導体集積回路装置
JPH06350035A (ja) * 1993-06-03 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH08191107A (ja) * 1995-01-11 1996-07-23 Mitsubishi Electric Corp 半導体装置とその製造方法
US5723355A (en) * 1997-01-17 1998-03-03 Programmable Microelectronics Corp. Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory
TW468273B (en) * 1997-04-10 2001-12-11 Hitachi Ltd Semiconductor integrated circuit device and method for manufacturing the same
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
JPH1117138A (ja) * 1997-06-24 1999-01-22 Hitachi Ltd 半導体集積回路装置
JP3967440B2 (ja) * 1997-12-09 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000200886A (ja) * 1999-01-07 2000-07-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2000307084A (ja) * 1999-04-23 2000-11-02 Hitachi Ltd 半導体集積回路装置およびその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003012872A1 (fr) * 2001-07-31 2003-02-13 Hitachi, Ltd. Dispositif a circuit integre a semi-conducteur
JP2003045997A (ja) * 2001-07-31 2003-02-14 Hitachi Ltd 半導体集積回路装置
US7671384B2 (en) 2003-06-10 2010-03-02 Fujitsu Microelectronics Limited Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a high-voltage transistor
US8530308B2 (en) 2003-06-10 2013-09-10 Fujitsu Semiconductor Limited Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a high-voltage transistor
KR101036158B1 (ko) 2003-07-29 2011-05-23 매그나칩 반도체 유한회사 Ｓｒａｍ 및 로직 복합 소자의 제조 방법
CN116759459A (zh) * 2023-08-18 2023-09-15 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片
CN116759459B (zh) * 2023-08-18 2023-12-05 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片

Also Published As

Publication number Publication date
US6433398B1 (en) 2002-08-13
TW480708B (en) 2002-03-21
KR100840282B1 (ko) 2008-06-20
KR20070008498A (ko) 2007-01-17
KR20010030315A (ko) 2001-04-16
US20020130342A1 (en) 2002-09-19
US6423588B1 (en) 2002-07-23
US6661062B2 (en) 2003-12-09
US6538293B2 (en) 2003-03-25
US20040036139A1 (en) 2004-02-26
US20030137014A1 (en) 2003-07-24
KR100843272B1 (ko) 2008-07-04
US6864549B2 (en) 2005-03-08

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