KR100843272B1 - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR100843272B1
KR100843272B1 KR1020000053073A KR20000053073A KR100843272B1 KR 100843272 B1 KR100843272 B1 KR 100843272B1 KR 1020000053073 A KR1020000053073 A KR 1020000053073A KR 20000053073 A KR20000053073 A KR 20000053073A KR 100843272 B1 KR100843272 B1 KR 100843272B1
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South Korea
Prior art keywords
insulating film
misfet
capacitor
well
conductivity type
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KR1020000053073A
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English (en)
Korean (ko)
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KR20010030315A (ko
Inventor
스즈키카즈히사
타카하시토시로
야나기사와야스노부
노나카유스케
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020000053073A 1999-09-13 2000-09-07 반도체 집적회로장치 Expired - Lifetime KR100843272B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-259460 1999-09-13
JP25946099A JP2001085625A (ja) 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060138404A Division KR100840282B1 (ko) 1999-09-13 2006-12-29 반도체 집적회로장치의 제조방법

Publications (2)

Publication Number Publication Date
KR20010030315A KR20010030315A (ko) 2001-04-16
KR100843272B1 true KR100843272B1 (ko) 2008-07-04

Family

ID=17334386

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020000053073A Expired - Lifetime KR100843272B1 (ko) 1999-09-13 2000-09-07 반도체 집적회로장치
KR1020060138404A Expired - Lifetime KR100840282B1 (ko) 1999-09-13 2006-12-29 반도체 집적회로장치의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020060138404A Expired - Lifetime KR100840282B1 (ko) 1999-09-13 2006-12-29 반도체 집적회로장치의 제조방법

Country Status (4)

Country Link
US (5) US6433398B1 (https=)
JP (1) JP2001085625A (https=)
KR (2) KR100843272B1 (https=)
TW (1) TW480708B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100951272B1 (ko) 2002-04-12 2010-04-02 엘피다 메모리, 아이엔씨. 반도체 집적 회로 장치의 제조 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
JP4083397B2 (ja) * 2001-06-18 2008-04-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP4492837B2 (ja) * 2001-07-31 2010-06-30 株式会社日立製作所 半導体集積回路装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
JP4340040B2 (ja) * 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6966399B2 (en) * 2002-11-26 2005-11-22 Yamaha Motor Corporation, U.S.A. Small vehicle with power steering assembly
WO2004112145A1 (ja) 2003-06-10 2004-12-23 Fujitsu Limited パンチスルー耐性を向上させた半導体集積回路装置およびその製造方法、低電圧トランジスタと高電圧トランジスタとを含む半導体集積回路装置
KR101036158B1 (ko) 2003-07-29 2011-05-23 매그나칩 반도체 유한회사 Ｓｒａｍ 및 로직 복합 소자의 제조 방법
JP2005064165A (ja) * 2003-08-11 2005-03-10 Hitachi Ltd 半導体集積回路装置
JP4687066B2 (ja) * 2004-10-25 2011-05-25 株式会社デンソー パワーｉｃ
JP5001522B2 (ja) * 2005-04-20 2012-08-15 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7960810B2 (en) 2006-09-05 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof
JP2008177491A (ja) * 2007-01-22 2008-07-31 Renesas Technology Corp 半導体装置
US7902882B2 (en) * 2008-12-29 2011-03-08 Daniele Vimercati Apparatus including a follower output buffer having an output impedance that adapts to a transmission line impedance
US20100187611A1 (en) * 2009-01-27 2010-07-29 Roberto Schiwon Contacts in Semiconductor Devices
US9240417B1 (en) * 2014-08-27 2016-01-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
CN116759459B (zh) * 2023-08-18 2023-12-05 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167018A (en) * 1976-02-25 1979-09-04 Hitachi, Ltd. MIS capacitance element
JPH06350035A (ja) * 1993-06-03 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
JPH1117138A (ja) * 1997-06-24 1999-01-22 Hitachi Ltd 半導体集積回路装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61232656A (ja) * 1985-04-09 1986-10-16 Citizen Watch Co Ltd 半導体集積回路
JPH05235289A (ja) 1992-02-19 1993-09-10 Hitachi Ltd 半導体集積回路装置
JPH08191107A (ja) * 1995-01-11 1996-07-23 Mitsubishi Electric Corp 半導体装置とその製造方法
US5723355A (en) * 1997-01-17 1998-03-03 Programmable Microelectronics Corp. Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory
TW468273B (en) * 1997-04-10 2001-12-11 Hitachi Ltd Semiconductor integrated circuit device and method for manufacturing the same
JP3967440B2 (ja) * 1997-12-09 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000200886A (ja) * 1999-01-07 2000-07-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2000307084A (ja) * 1999-04-23 2000-11-02 Hitachi Ltd 半導体集積回路装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167018A (en) * 1976-02-25 1979-09-04 Hitachi, Ltd. MIS capacitance element
JPH06350035A (ja) * 1993-06-03 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
JPH1117138A (ja) * 1997-06-24 1999-01-22 Hitachi Ltd 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100951272B1 (ko) 2002-04-12 2010-04-02 엘피다 메모리, 아이엔씨. 반도체 집적 회로 장치의 제조 방법

Also Published As

Publication number Publication date
US6433398B1 (en) 2002-08-13
JP2001085625A (ja) 2001-03-30
TW480708B (en) 2002-03-21
KR100840282B1 (ko) 2008-06-20
KR20070008498A (ko) 2007-01-17
KR20010030315A (ko) 2001-04-16
US20020130342A1 (en) 2002-09-19
US6423588B1 (en) 2002-07-23
US6661062B2 (en) 2003-12-09
US6538293B2 (en) 2003-03-25
US20040036139A1 (en) 2004-02-26
US20030137014A1 (en) 2003-07-24
US6864549B2 (en) 2005-03-08

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