TW480708B - Semiconductor integrated circuit device and fabrication method thereof - Google Patents

Semiconductor integrated circuit device and fabrication method thereof Download PDF

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Publication number
TW480708B
TW480708B TW089118476A TW89118476A TW480708B TW 480708 B TW480708 B TW 480708B TW 089118476 A TW089118476 A TW 089118476A TW 89118476 A TW89118476 A TW 89118476A TW 480708 B TW480708 B TW 480708B
Authority
TW
Taiwan
Prior art keywords
misfet
gate
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
TW089118476A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuhisa Suzuki
Toshiro Takahashi
Yasunobu Yanagisawa
Yusuke Nonaka
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW480708B publication Critical patent/TW480708B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW089118476A 1999-09-13 2000-09-08 Semiconductor integrated circuit device and fabrication method thereof TW480708B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25946099A JP2001085625A (ja) 1999-09-13 1999-09-13 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW480708B true TW480708B (en) 2002-03-21

Family

ID=17334386

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089118476A TW480708B (en) 1999-09-13 2000-09-08 Semiconductor integrated circuit device and fabrication method thereof

Country Status (4)

Country Link
US (5) US6433398B1 (https=)
JP (1) JP2001085625A (https=)
KR (2) KR100843272B1 (https=)
TW (1) TW480708B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
JP4083397B2 (ja) * 2001-06-18 2008-04-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP4492837B2 (ja) * 2001-07-31 2010-06-30 株式会社日立製作所 半導体集積回路装置
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
JP4340040B2 (ja) * 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4190791B2 (ja) 2002-04-12 2008-12-03 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
US6966399B2 (en) * 2002-11-26 2005-11-22 Yamaha Motor Corporation, U.S.A. Small vehicle with power steering assembly
WO2004112145A1 (ja) 2003-06-10 2004-12-23 Fujitsu Limited パンチスルー耐性を向上させた半導体集積回路装置およびその製造方法、低電圧トランジスタと高電圧トランジスタとを含む半導体集積回路装置
KR101036158B1 (ko) 2003-07-29 2011-05-23 매그나칩 반도체 유한회사 Ｓｒａｍ 및 로직 복합 소자의 제조 방법
JP2005064165A (ja) * 2003-08-11 2005-03-10 Hitachi Ltd 半導体集積回路装置
JP4687066B2 (ja) * 2004-10-25 2011-05-25 株式会社デンソー パワーｉｃ
JP5001522B2 (ja) * 2005-04-20 2012-08-15 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7960810B2 (en) 2006-09-05 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof
JP2008177491A (ja) * 2007-01-22 2008-07-31 Renesas Technology Corp 半導体装置
US7902882B2 (en) * 2008-12-29 2011-03-08 Daniele Vimercati Apparatus including a follower output buffer having an output impedance that adapts to a transmission line impedance
US20100187611A1 (en) * 2009-01-27 2010-07-29 Roberto Schiwon Contacts in Semiconductor Devices
US9240417B1 (en) * 2014-08-27 2016-01-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
CN116759459B (zh) * 2023-08-18 2023-12-05 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61232656A (ja) * 1985-04-09 1986-10-16 Citizen Watch Co Ltd 半導体集積回路
JPH05235289A (ja) 1992-02-19 1993-09-10 Hitachi Ltd 半導体集積回路装置
JPH06350035A (ja) * 1993-06-03 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH08191107A (ja) * 1995-01-11 1996-07-23 Mitsubishi Electric Corp 半導体装置とその製造方法
US5723355A (en) * 1997-01-17 1998-03-03 Programmable Microelectronics Corp. Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory
TW468273B (en) * 1997-04-10 2001-12-11 Hitachi Ltd Semiconductor integrated circuit device and method for manufacturing the same
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
JPH1117138A (ja) * 1997-06-24 1999-01-22 Hitachi Ltd 半導体集積回路装置
JP3967440B2 (ja) * 1997-12-09 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000200886A (ja) * 1999-01-07 2000-07-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2000307084A (ja) * 1999-04-23 2000-11-02 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
US6433398B1 (en) 2002-08-13
JP2001085625A (ja) 2001-03-30
KR100840282B1 (ko) 2008-06-20
KR20070008498A (ko) 2007-01-17
KR20010030315A (ko) 2001-04-16
US20020130342A1 (en) 2002-09-19
US6423588B1 (en) 2002-07-23
US6661062B2 (en) 2003-12-09
US6538293B2 (en) 2003-03-25
US20040036139A1 (en) 2004-02-26
US20030137014A1 (en) 2003-07-24
KR100843272B1 (ko) 2008-07-04
US6864549B2 (en) 2005-03-08

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