JP2001077368A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001077368A
JP2001077368A JP25047599A JP25047599A JP2001077368A JP 2001077368 A JP2001077368 A JP 2001077368A JP 25047599 A JP25047599 A JP 25047599A JP 25047599 A JP25047599 A JP 25047599A JP 2001077368 A JP2001077368 A JP 2001077368A
Authority
JP
Japan
Prior art keywords
insulating film
element isolation
semiconductor layer
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25047599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001077368A5 (enExample
Inventor
Yuichi Hirano
有一 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP25047599A priority Critical patent/JP2001077368A/ja
Priority to US09/488,713 priority patent/US6252280B1/en
Priority to DE10043183A priority patent/DE10043183A1/de
Priority to KR1020000051844A priority patent/KR100340395B1/ko
Publication of JP2001077368A publication Critical patent/JP2001077368A/ja
Priority to US09/838,267 priority patent/US6337230B2/en
Publication of JP2001077368A5 publication Critical patent/JP2001077368A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP25047599A 1999-09-03 1999-09-03 半導体装置及びその製造方法 Pending JP2001077368A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP25047599A JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法
US09/488,713 US6252280B1 (en) 1999-09-03 2000-01-21 Semiconductor device and manufacturing method thereof
DE10043183A DE10043183A1 (de) 1999-09-03 2000-09-01 Halbleitervorrichtung und Herstellungsvorrichtung von einer Halbleitervorrichtung
KR1020000051844A KR100340395B1 (ko) 1999-09-03 2000-09-02 반도체 장치 및 그 제조 방법
US09/838,267 US6337230B2 (en) 1999-09-03 2001-04-20 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25047599A JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001077368A true JP2001077368A (ja) 2001-03-23
JP2001077368A5 JP2001077368A5 (enExample) 2006-10-12

Family

ID=17208415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25047599A Pending JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6252280B1 (enExample)
JP (1) JP2001077368A (enExample)
KR (1) KR100340395B1 (enExample)
DE (1) DE10043183A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299633A (ja) * 2001-04-03 2002-10-11 Sony Corp 電界効果型トランジスタ
JP2006049784A (ja) * 2003-08-28 2006-02-16 Renesas Technology Corp 半導体記憶装置及びその製造方法
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
US7170110B2 (en) 2001-04-03 2007-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7271454B2 (en) 2003-08-28 2007-09-18 Renesas Technology Corp. Semiconductor memory device and method of manufacturing the same
US7504291B2 (en) 2002-04-25 2009-03-17 Renesas Technology Corp. MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness
US7531878B2 (en) 2002-10-17 2009-05-12 Renesas Technology Corp. Semiconductor MIS transistor formed on SOI semiconductor substrate
JP2010045331A (ja) * 2008-07-22 2010-02-25 Honeywell Internatl Inc ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー
CN106226942A (zh) * 2010-09-13 2016-12-14 株式会社半导体能源研究所 液晶显示设备及其制造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444432B1 (en) * 1997-06-13 2002-09-03 Alan M. Kleinfeld Method of detection of cardiac ischemia using fatty acid binding protein
JP2000243967A (ja) * 1999-02-22 2000-09-08 Sony Corp 半導体装置の製造方法
JP3716406B2 (ja) * 2000-02-08 2005-11-16 富士通株式会社 絶縁ゲート型半導体装置及びその製造方法
JP4698793B2 (ja) * 2000-04-03 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
JP4988086B2 (ja) * 2000-06-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法並びに抵抗器及び半導体素子
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
JP3990858B2 (ja) * 2000-07-31 2007-10-17 株式会社東芝 半導体装置
JP2002185011A (ja) * 2000-12-19 2002-06-28 Seiko Epson Corp 半導体装置
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
JP4154578B2 (ja) * 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
US6905919B2 (en) 2003-07-29 2005-06-14 Chartered Semiconductor Manufacturing Ltd. Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension
JP2006054430A (ja) * 2004-07-12 2006-02-23 Renesas Technology Corp 半導体装置
KR100629264B1 (ko) 2004-07-23 2006-09-29 삼성전자주식회사 게이트 관통 바디 콘택을 갖는 반도체소자 및 그 제조방법
US7170816B2 (en) * 2004-12-16 2007-01-30 Macronix International Co., Ltd. Method and apparatus for passing charge from word lines during manufacture
JP5270876B2 (ja) * 2007-08-22 2013-08-21 セイコーインスツル株式会社 半導体装置
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US9490249B2 (en) 2014-04-30 2016-11-08 Macronix International Co., Ltd. Antenna effect discharge circuit and manufacturing method
FR3069373A1 (fr) * 2017-07-19 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Transistors double grilles optimises et procede de fabrication
US10546929B2 (en) 2017-07-19 2020-01-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optimized double-gate transistors and fabricating process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
JPH0969610A (ja) * 1995-08-31 1997-03-11 Hitachi Ltd 集積半導体装置およびその製造方法
US5753955A (en) * 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
US6159807A (en) * 1998-09-21 2000-12-12 International Business Machines Corporation Self-aligned dynamic threshold CMOS device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299633A (ja) * 2001-04-03 2002-10-11 Sony Corp 電界効果型トランジスタ
US7170110B2 (en) 2001-04-03 2007-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7504291B2 (en) 2002-04-25 2009-03-17 Renesas Technology Corp. MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness
US7531878B2 (en) 2002-10-17 2009-05-12 Renesas Technology Corp. Semiconductor MIS transistor formed on SOI semiconductor substrate
US7271454B2 (en) 2003-08-28 2007-09-18 Renesas Technology Corp. Semiconductor memory device and method of manufacturing the same
US7382026B2 (en) 2003-08-28 2008-06-03 Renesas Technology Corp. Semiconductor memory device and method of manufacturing the same
CN100423267C (zh) * 2003-08-28 2008-10-01 株式会社瑞萨科技 半导体存储器件及其制造方法
JP2006049784A (ja) * 2003-08-28 2006-02-16 Renesas Technology Corp 半導体記憶装置及びその製造方法
US7675122B2 (en) 2003-08-28 2010-03-09 Renesas Technology Corp. Semiconductor memory device
US7402865B2 (en) 2004-08-27 2008-07-22 Renesas Technology Corp. Semiconductor device including a contact connected to the body and method of manufacturing the same
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
JP2010045331A (ja) * 2008-07-22 2010-02-25 Honeywell Internatl Inc ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー
CN106226942A (zh) * 2010-09-13 2016-12-14 株式会社半导体能源研究所 液晶显示设备及其制造方法
CN106226942B (zh) * 2010-09-13 2021-10-01 株式会社半导体能源研究所 显示设备及包括显示设备的电子设备
US11417688B2 (en) 2010-09-13 2022-08-16 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US11682678B2 (en) 2010-09-13 2023-06-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US12199107B2 (en) 2010-09-13 2025-01-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same

Also Published As

Publication number Publication date
US20010029067A1 (en) 2001-10-11
DE10043183A1 (de) 2001-04-12
KR20010030243A (ko) 2001-04-16
KR100340395B1 (ko) 2002-06-15
US6252280B1 (en) 2001-06-26
US6337230B2 (en) 2002-01-08

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