JP2001077368A5 - - Google Patents

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Publication number
JP2001077368A5
JP2001077368A5 JP1999250475A JP25047599A JP2001077368A5 JP 2001077368 A5 JP2001077368 A5 JP 2001077368A5 JP 1999250475 A JP1999250475 A JP 1999250475A JP 25047599 A JP25047599 A JP 25047599A JP 2001077368 A5 JP2001077368 A5 JP 2001077368A5
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JP
Japan
Prior art keywords
insulating film
semiconductor layer
gate electrode
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999250475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001077368A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP25047599A priority Critical patent/JP2001077368A/ja
Priority claimed from JP25047599A external-priority patent/JP2001077368A/ja
Priority to US09/488,713 priority patent/US6252280B1/en
Priority to DE10043183A priority patent/DE10043183A1/de
Priority to KR1020000051844A priority patent/KR100340395B1/ko
Publication of JP2001077368A publication Critical patent/JP2001077368A/ja
Priority to US09/838,267 priority patent/US6337230B2/en
Publication of JP2001077368A5 publication Critical patent/JP2001077368A5/ja
Pending legal-status Critical Current

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JP25047599A 1999-09-03 1999-09-03 半導体装置及びその製造方法 Pending JP2001077368A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP25047599A JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法
US09/488,713 US6252280B1 (en) 1999-09-03 2000-01-21 Semiconductor device and manufacturing method thereof
DE10043183A DE10043183A1 (de) 1999-09-03 2000-09-01 Halbleitervorrichtung und Herstellungsvorrichtung von einer Halbleitervorrichtung
KR1020000051844A KR100340395B1 (ko) 1999-09-03 2000-09-02 반도체 장치 및 그 제조 방법
US09/838,267 US6337230B2 (en) 1999-09-03 2001-04-20 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25047599A JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001077368A JP2001077368A (ja) 2001-03-23
JP2001077368A5 true JP2001077368A5 (enExample) 2006-10-12

Family

ID=17208415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25047599A Pending JP2001077368A (ja) 1999-09-03 1999-09-03 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6252280B1 (enExample)
JP (1) JP2001077368A (enExample)
KR (1) KR100340395B1 (enExample)
DE (1) DE10043183A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444432B1 (en) * 1997-06-13 2002-09-03 Alan M. Kleinfeld Method of detection of cardiac ischemia using fatty acid binding protein
JP2000243967A (ja) * 1999-02-22 2000-09-08 Sony Corp 半導体装置の製造方法
JP3716406B2 (ja) * 2000-02-08 2005-11-16 富士通株式会社 絶縁ゲート型半導体装置及びその製造方法
JP4698793B2 (ja) * 2000-04-03 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
JP4988086B2 (ja) * 2000-06-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法並びに抵抗器及び半導体素子
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
JP3990858B2 (ja) * 2000-07-31 2007-10-17 株式会社東芝 半導体装置
JP2002185011A (ja) * 2000-12-19 2002-06-28 Seiko Epson Corp 半導体装置
JP2002299633A (ja) * 2001-04-03 2002-10-11 Sony Corp 電界効果型トランジスタ
TW200305976A (en) 2001-04-03 2003-11-01 Matsushita Electric Industrial Co Ltd Semiconductor device and method for fabricating the same
JP2003318405A (ja) 2002-04-25 2003-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
JP4294935B2 (ja) 2002-10-17 2009-07-15 株式会社ルネサステクノロジ 半導体装置
JP4154578B2 (ja) * 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
US6905919B2 (en) 2003-07-29 2005-06-14 Chartered Semiconductor Manufacturing Ltd. Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension
JP2006049784A (ja) * 2003-08-28 2006-02-16 Renesas Technology Corp 半導体記憶装置及びその製造方法
TWI244729B (en) 2003-08-28 2005-12-01 Renesas Tech Corp Semiconductor memory device and method of manufacturing the same
JP2006054430A (ja) * 2004-07-12 2006-02-23 Renesas Technology Corp 半導体装置
KR100629264B1 (ko) 2004-07-23 2006-09-29 삼성전자주식회사 게이트 관통 바디 콘택을 갖는 반도체소자 및 그 제조방법
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
US7170816B2 (en) * 2004-12-16 2007-01-30 Macronix International Co., Ltd. Method and apparatus for passing charge from word lines during manufacture
JP5270876B2 (ja) * 2007-08-22 2013-08-21 セイコーインスツル株式会社 半導体装置
US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US9490249B2 (en) 2014-04-30 2016-11-08 Macronix International Co., Ltd. Antenna effect discharge circuit and manufacturing method
FR3069373A1 (fr) * 2017-07-19 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Transistors double grilles optimises et procede de fabrication
US10546929B2 (en) 2017-07-19 2020-01-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optimized double-gate transistors and fabricating process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
JPH0969610A (ja) * 1995-08-31 1997-03-11 Hitachi Ltd 集積半導体装置およびその製造方法
US5753955A (en) * 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
US6159807A (en) * 1998-09-21 2000-12-12 International Business Machines Corporation Self-aligned dynamic threshold CMOS device

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