JP2000349235A5 - - Google Patents
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- JP2000349235A5 JP2000349235A5 JP2000107465A JP2000107465A JP2000349235A5 JP 2000349235 A5 JP2000349235 A5 JP 2000349235A5 JP 2000107465 A JP2000107465 A JP 2000107465A JP 2000107465 A JP2000107465 A JP 2000107465A JP 2000349235 A5 JP2000349235 A5 JP 2000349235A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/306003 | 1999-05-05 | ||
US09/306,003 US6172383B1 (en) | 1997-12-31 | 1999-05-05 | Power MOSFET having voltage-clamped gate |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009158635A Division JP5178649B2 (ja) | 1999-05-05 | 2009-07-03 | 電圧クランプされたゲートを備えるパワーmosfet |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000349235A JP2000349235A (ja) | 2000-12-15 |
JP2000349235A5 true JP2000349235A5 (ja) | 2007-05-31 |
JP4369009B2 JP4369009B2 (ja) | 2009-11-18 |
Family
ID=23183305
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000107465A Expired - Fee Related JP4369009B2 (ja) | 1999-05-05 | 2000-04-10 | 電圧クランプされたゲートを備えるパワーmosfet |
JP2009158635A Expired - Lifetime JP5178649B2 (ja) | 1999-05-05 | 2009-07-03 | 電圧クランプされたゲートを備えるパワーmosfet |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009158635A Expired - Lifetime JP5178649B2 (ja) | 1999-05-05 | 2009-07-03 | 電圧クランプされたゲートを備えるパワーmosfet |
Country Status (5)
Country | Link |
---|---|
US (1) | US6172383B1 (ja) |
EP (1) | EP1063757B1 (ja) |
JP (2) | JP4369009B2 (ja) |
KR (1) | KR100625916B1 (ja) |
DE (1) | DE60009214T2 (ja) |
Families Citing this family (70)
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JP2000022456A (ja) * | 1998-06-26 | 2000-01-21 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
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KR100794151B1 (ko) * | 2000-05-22 | 2008-01-14 | 소니 가부시끼 가이샤 | 전계 효과 트랜지스터의 보호 회로 및 반도체 장치 |
JP4846106B2 (ja) * | 2001-02-16 | 2011-12-28 | 三菱電機株式会社 | 電界効果型半導体装置及びその製造方法 |
JP4641660B2 (ja) * | 2001-05-18 | 2011-03-02 | 三菱電機株式会社 | レベルシフト回路 |
US6798629B1 (en) * | 2001-06-15 | 2004-09-28 | Integrated Device Technology, Inc. | Overvoltage protection circuits that utilize capacitively bootstrapped variable voltages |
JP2003243512A (ja) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | 静電破壊保護回路 |
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JP2005175054A (ja) * | 2003-12-09 | 2005-06-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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JP2007049012A (ja) * | 2005-08-11 | 2007-02-22 | Nec Electronics Corp | 半導体装置 |
US7545614B2 (en) * | 2005-09-30 | 2009-06-09 | Renesas Technology America, Inc. | Electrostatic discharge device with variable on time |
JP2009527120A (ja) * | 2006-02-17 | 2009-07-23 | エヌエックスピー ビー ヴィ | 集積回路における静電放電保護回路及び方法 |
JP2008042950A (ja) * | 2006-08-01 | 2008-02-21 | Mitsubishi Electric Corp | 電力変換装置 |
US8476709B2 (en) | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
US8144441B2 (en) * | 2006-08-30 | 2012-03-27 | Triquint Semiconductor, Inc. | Electrostatic discharge protection circuit for compound semiconductor devices and circuits |
TWI496272B (zh) | 2006-09-29 | 2015-08-11 | Fairchild Semiconductor | 用於功率金氧半導體場效電晶體之雙電壓多晶矽二極體靜電放電電路 |
JP4427561B2 (ja) * | 2007-05-29 | 2010-03-10 | 株式会社東芝 | 半導体装置 |
KR101014152B1 (ko) | 2008-10-15 | 2011-02-14 | 기아자동차주식회사 | 차량 인버터 회로 및 그를 이용한 차량 |
US9142592B2 (en) | 2009-04-09 | 2015-09-22 | Infineon Technologies Ag | Integrated circuit including ESD device |
DE112011100099T5 (de) | 2010-01-29 | 2012-10-04 | Fuji Electric Co., Ltd | Halbleiterbauelement |
US8614480B2 (en) * | 2011-07-05 | 2013-12-24 | Texas Instruments Incorporated | Power MOSFET with integrated gate resistor and diode-connected MOSFET |
KR101818537B1 (ko) * | 2011-07-14 | 2018-01-15 | 현대모비스 주식회사 | Mosfet 보호 회로 및 방법 |
KR101799017B1 (ko) | 2011-08-18 | 2017-11-20 | 에스케이하이닉스 주식회사 | 전압 안정화 회로를 구비한 반도체 집적 회로 |
DE102012014860A1 (de) | 2012-07-26 | 2014-05-15 | Infineon Technologies Ag | ESD-Schutz |
JP2014045004A (ja) * | 2012-08-24 | 2014-03-13 | Samsung Electro-Mechanics Co Ltd | Esd保護回路及び電子機器 |
EP2736171A1 (en) * | 2012-11-23 | 2014-05-28 | Nxp B.V. | Cascoded semiconductor devices |
JP5729371B2 (ja) * | 2012-12-27 | 2015-06-03 | 富士電機株式会社 | 半導体装置 |
US9966584B2 (en) | 2013-03-11 | 2018-05-08 | Atieva, Inc. | Bus bar for battery packs |
US10063071B2 (en) | 2013-03-15 | 2018-08-28 | Atieva, Inc. | Balance resistor and low pass filter |
US10084214B2 (en) | 2013-03-15 | 2018-09-25 | Atieva, Inc. | Automatic switchover from cell voltage to interconnect voltage monitoring |
US10901019B2 (en) | 2013-03-15 | 2021-01-26 | Atieva, Inc. | Method of connecting cell voltage sensors |
US9041454B2 (en) | 2013-03-15 | 2015-05-26 | Atieva, Inc. | Bias circuit for a switched capacitor level shifter |
CN103347330B (zh) * | 2013-06-22 | 2015-04-08 | 潍坊晶兰电源技术有限公司 | 一种led驱动控制电路 |
CN103347329B (zh) * | 2013-06-22 | 2015-04-08 | 潍坊晶兰电源技术有限公司 | 一种led驱动电路 |
CN103347331A (zh) * | 2013-06-22 | 2013-10-09 | 潍坊晶兰电源技术有限公司 | 一种驱动芯片保护电路 |
JP2015015643A (ja) * | 2013-07-05 | 2015-01-22 | ローム株式会社 | 信号伝達回路 |
TWI502836B (zh) * | 2013-08-05 | 2015-10-01 | Ind Tech Res Inst | 電壓保護傳輸裝置及包括該裝置的電壓保護裝置 |
JP5741666B2 (ja) * | 2013-10-30 | 2015-07-01 | 富士電機株式会社 | 半導体装置 |
JP6364758B2 (ja) * | 2013-12-04 | 2018-08-01 | オムロン株式会社 | 全波整流回路 |
US9640972B2 (en) * | 2014-03-26 | 2017-05-02 | Infineon Technologies Ag | Controlled switch-off of a power switch |
JP6256320B2 (ja) * | 2014-11-28 | 2018-01-10 | 三菱電機株式会社 | Esd保護回路及びrfスイッチ |
CN104505390B (zh) * | 2015-01-08 | 2019-03-15 | 电子科技大学 | 集成式二极管链功率mos防静电保护结构 |
CN104538395B (zh) * | 2015-01-08 | 2019-01-25 | 电子科技大学 | 一种功率vdmos器件二极管并联式esd防护机构 |
JP2016201069A (ja) * | 2015-04-14 | 2016-12-01 | 富士通セミコンダクター株式会社 | 整流回路、電源回路及びrfidタグ |
DE102015212247A1 (de) | 2015-06-30 | 2017-01-05 | TRUMPF Hüttinger GmbH + Co. KG | Hochfrequenzverstärkeranordnung |
DE102015212152B4 (de) | 2015-06-30 | 2018-03-15 | TRUMPF Hüttinger GmbH + Co. KG | Nicht lineare Hochfrequenzverstärkeranordnung |
TWI627822B (zh) * | 2016-11-09 | 2018-06-21 | 致茂電子股份有限公司 | 鉗位控制電路 |
EP3563473B1 (en) * | 2016-12-29 | 2023-02-01 | ScandiNova Systems AB | Electrical pulse generating module with storage capacitor, freewheeling diode and transformer reset during charging |
JP6643268B2 (ja) * | 2017-03-24 | 2020-02-12 | 株式会社東芝 | 半導体装置 |
KR101916795B1 (ko) | 2017-06-22 | 2018-11-08 | 현대오트론 주식회사 | 스위치드 릴럭턴스 모터를 갖는 모터 시스템 및 그것의 동작 방법 |
US10897246B2 (en) * | 2017-11-10 | 2021-01-19 | Qorvo Us, Inc. | Radio frequency switching circuitry with reduced switching time |
CN111316553B (zh) * | 2017-11-15 | 2023-09-29 | 三菱电机株式会社 | 整流器及整流天线装置 |
CN107834824B (zh) * | 2017-12-12 | 2024-02-27 | 深圳市禾望电气股份有限公司 | 一种功率开关管驱动电路 |
JP7155534B2 (ja) * | 2018-02-16 | 2022-10-19 | 富士電機株式会社 | 半導体装置 |
FR3079348B1 (fr) * | 2018-03-22 | 2023-08-11 | St Microelectronics Tours Sas | Circuit de protection contre les décharges électrostatiques |
TWI729538B (zh) | 2018-11-21 | 2021-06-01 | 大陸商上海瀚薪科技有限公司 | 一種整合箝制電壓箝位電路的碳化矽半導體元件 |
US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
US11579645B2 (en) * | 2019-06-21 | 2023-02-14 | Wolfspeed, Inc. | Device design for short-circuitry protection circuitry within transistors |
US11410990B1 (en) | 2020-08-25 | 2022-08-09 | Semiq Incorporated | Silicon carbide MOSFET with optional asymmetric gate clamp |
JP2023032984A (ja) * | 2021-08-27 | 2023-03-09 | 富士電機株式会社 | 半導体モジュール |
CN115831956A (zh) * | 2021-09-17 | 2023-03-21 | 中兴光电子技术有限公司 | 一种静电释放保护电路、保护单元以及芯片和装置 |
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US3967295A (en) | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
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JPH08172188A (ja) * | 1994-12-19 | 1996-07-02 | Kawasaki Steel Corp | 半導体装置 |
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US5811857A (en) | 1996-10-22 | 1998-09-22 | International Business Machines Corporation | Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications |
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JPH11251594A (ja) * | 1997-12-31 | 1999-09-17 | Siliconix Inc | 電圧クランプされたゲ―トを有するパワ―mosfet |
-
1999
- 1999-05-05 US US09/306,003 patent/US6172383B1/en not_active Expired - Lifetime
-
2000
- 2000-04-10 JP JP2000107465A patent/JP4369009B2/ja not_active Expired - Fee Related
- 2000-04-11 EP EP00107746A patent/EP1063757B1/en not_active Expired - Lifetime
- 2000-04-11 DE DE60009214T patent/DE60009214T2/de not_active Expired - Lifetime
- 2000-05-03 KR KR1020000023687A patent/KR100625916B1/ko active IP Right Grant
-
2009
- 2009-07-03 JP JP2009158635A patent/JP5178649B2/ja not_active Expired - Lifetime