JP2000196093A5 - - Google Patents

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Publication number
JP2000196093A5
JP2000196093A5 JP1998370541A JP37054198A JP2000196093A5 JP 2000196093 A5 JP2000196093 A5 JP 2000196093A5 JP 1998370541 A JP1998370541 A JP 1998370541A JP 37054198 A JP37054198 A JP 37054198A JP 2000196093 A5 JP2000196093 A5 JP 2000196093A5
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JP
Japan
Prior art keywords
wiring
semiconductor device
tft
channel
active layer
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JP1998370541A
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English (en)
Japanese (ja)
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JP4008133B2 (ja
JP2000196093A (ja
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Priority to JP37054198A priority Critical patent/JP4008133B2/ja
Priority claimed from JP37054198A external-priority patent/JP4008133B2/ja
Publication of JP2000196093A publication Critical patent/JP2000196093A/ja
Priority to US09/837,558 priority patent/US6835586B2/en
Publication of JP2000196093A5 publication Critical patent/JP2000196093A5/ja
Application granted granted Critical
Publication of JP4008133B2 publication Critical patent/JP4008133B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP37054198A 1998-12-25 1998-12-25 半導体装置 Expired - Fee Related JP4008133B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP37054198A JP4008133B2 (ja) 1998-12-25 1998-12-25 半導体装置
US09/837,558 US6835586B2 (en) 1998-12-25 2001-04-19 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37054198A JP4008133B2 (ja) 1998-12-25 1998-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2000196093A JP2000196093A (ja) 2000-07-14
JP2000196093A5 true JP2000196093A5 (https=) 2006-03-09
JP4008133B2 JP4008133B2 (ja) 2007-11-14

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Family Applications (1)

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JP37054198A Expired - Fee Related JP4008133B2 (ja) 1998-12-25 1998-12-25 半導体装置

Country Status (2)

Country Link
US (1) US6835586B2 (https=)
JP (1) JP4008133B2 (https=)

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JP4008133B2 (ja) 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
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KR101870460B1 (ko) * 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
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JP2013247270A (ja) * 2012-05-28 2013-12-09 Sony Corp 撮像装置および撮像表示システム
CN102956649A (zh) * 2012-11-26 2013-03-06 京东方科技集团股份有限公司 阵列基板、阵列基板制作方法及显示装置
JP2014135571A (ja) * 2013-01-08 2014-07-24 V Technology Co Ltd 撮像装置
JP6166128B2 (ja) * 2013-08-20 2017-07-19 ソニーセミコンダクタソリューションズ株式会社 放射線撮像装置および放射線撮像表示システム
KR20160013430A (ko) * 2014-07-25 2016-02-04 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 장치
CN104409512A (zh) * 2014-11-11 2015-03-11 深圳市华星光电技术有限公司 基于双栅极结构的低温多晶硅薄膜晶体管及其制备方法
WO2017166167A1 (zh) * 2016-03-31 2017-10-05 华为技术有限公司 场效应管及其制造方法
JP2017224676A (ja) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ 半導体装置及び表示装置
JP6154976B1 (ja) * 2017-03-10 2017-06-28 株式会社半導体エネルギー研究所 半導体装置

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