IT1261716B - Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit. - Google Patents

Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit.

Info

Publication number
IT1261716B
IT1261716B ITMI921962A ITMI921962A IT1261716B IT 1261716 B IT1261716 B IT 1261716B IT MI921962 A ITMI921962 A IT MI921962A IT MI921962 A ITMI921962 A IT MI921962A IT 1261716 B IT1261716 B IT 1261716B
Authority
IT
Italy
Prior art keywords
region
formation
bit lines
word line
extending
Prior art date
Application number
ITMI921962A
Other languages
English (en)
Italian (it)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921962A0 publication Critical patent/ITMI921962A0/it
Publication of ITMI921962A1 publication Critical patent/ITMI921962A1/it
Application granted granted Critical
Publication of IT1261716B publication Critical patent/IT1261716B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
ITMI921962A 1991-09-04 1992-08-07 Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit. IT1261716B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (3)

Publication Number Publication Date
ITMI921962A0 ITMI921962A0 (it) 1992-08-07
ITMI921962A1 ITMI921962A1 (it) 1993-03-05
IT1261716B true IT1261716B (it) 1996-05-30

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921962A IT1261716B (it) 1991-09-04 1992-08-07 Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit.

Country Status (7)

Country Link
KR (1) KR940004609B1 (ja)
CN (1) CN1070279A (ja)
DE (1) DE4226421A1 (ja)
FR (1) FR2680908A1 (ja)
GB (1) GB2259405A (ja)
IT (1) IT1261716B (ja)
TW (1) TW222341B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
DE10254155B4 (de) * 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型ｒｏｍ
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Also Published As

Publication number Publication date
GB9216801D0 (en) 1992-09-23
ITMI921962A0 (it) 1992-08-07
KR930006951A (ko) 1993-04-22
DE4226421A1 (de) 1993-03-18
KR940004609B1 (ko) 1994-05-25
FR2680908A1 (fr) 1993-03-05
ITMI921962A1 (it) 1993-03-05
TW222341B (ja) 1994-04-11
GB2259405A (en) 1993-03-10
CN1070279A (zh) 1993-03-24

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