GB9216801D0 - Memory devices - Google Patents

Memory devices

Info

Publication number
GB9216801D0
GB9216801D0 GB929216801A GB9216801A GB9216801D0 GB 9216801 D0 GB9216801 D0 GB 9216801D0 GB 929216801 A GB929216801 A GB 929216801A GB 9216801 A GB9216801 A GB 9216801A GB 9216801 D0 GB9216801 D0 GB 9216801D0
Authority
GB
United Kingdom
Prior art keywords
memory devices
memory
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB929216801A
Other versions
GB2259405A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9216801D0 publication Critical patent/GB9216801D0/en
Publication of GB2259405A publication Critical patent/GB2259405A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
GB9216801A 1991-09-04 1992-08-07 Semiconductor read only memory Withdrawn GB2259405A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (en) 1991-09-04 1991-09-04 Mask read only memory

Publications (2)

Publication Number Publication Date
GB9216801D0 true GB9216801D0 (en) 1992-09-23
GB2259405A GB2259405A (en) 1993-03-10

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9216801A Withdrawn GB2259405A (en) 1991-09-04 1992-08-07 Semiconductor read only memory

Country Status (7)

Country Link
KR (1) KR940004609B1 (en)
CN (1) CN1070279A (en)
DE (1) DE4226421A1 (en)
FR (1) FR2680908A1 (en)
GB (1) GB2259405A (en)
IT (1) IT1261716B (en)
TW (1) TW222341B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (en) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd DEAD MEMORY WITH NAND TYPE MASK.
KR100446603B1 (en) * 1997-12-12 2004-11-03 삼성전자주식회사 Ferroelectric liquid crystal compound for increasing response rate of liquid crystal display device, liquid crystal composition comprising the same and liquid crystal display device using the same
DE10254155B4 (en) * 2002-11-20 2010-12-09 Infineon Technologies Ag Mask-programmable ROM device
CN100343920C (en) * 2004-07-14 2007-10-17 义隆电子股份有限公司 Plane unit ROM for character line metal lead technology
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (en) * 1986-07-23 1988-02-08 Hitachi Ltd Vertical type read only memory
IT1217403B (en) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics TABLECLOTH MEMORY MATRIX WITH STAGGERED EPROM CELLS

Also Published As

Publication number Publication date
FR2680908A1 (en) 1993-03-05
IT1261716B (en) 1996-05-30
ITMI921962A0 (en) 1992-08-07
ITMI921962A1 (en) 1993-03-05
GB2259405A (en) 1993-03-10
DE4226421A1 (en) 1993-03-18
KR930006951A (en) 1993-04-22
TW222341B (en) 1994-04-11
KR940004609B1 (en) 1994-05-25
CN1070279A (en) 1993-03-24

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)