TW222341B - - Google Patents

Info

Publication number
TW222341B
TW222341B TW081106279A TW81106279A TW222341B TW 222341 B TW222341 B TW 222341B TW 081106279 A TW081106279 A TW 081106279A TW 81106279 A TW81106279 A TW 81106279A TW 222341 B TW222341 B TW 222341B
Authority
TW
Taiwan
Application number
TW081106279A
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW222341B publication Critical patent/TW222341B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
TW081106279A 1991-09-04 1992-08-08 TW222341B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (1)

Publication Number Publication Date
TW222341B true TW222341B (zh) 1994-04-11

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081106279A TW222341B (zh) 1991-09-04 1992-08-08

Country Status (7)

Country Link
KR (1) KR940004609B1 (zh)
CN (1) CN1070279A (zh)
DE (1) DE4226421A1 (zh)
FR (1) FR2680908A1 (zh)
GB (1) GB2259405A (zh)
IT (1) IT1261716B (zh)
TW (1) TW222341B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
DE10254155B4 (de) 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型ｒｏｍ
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Also Published As

Publication number Publication date
CN1070279A (zh) 1993-03-24
IT1261716B (it) 1996-05-30
ITMI921962A1 (it) 1993-03-05
KR940004609B1 (ko) 1994-05-25
DE4226421A1 (de) 1993-03-18
ITMI921962A0 (it) 1992-08-07
KR930006951A (ko) 1993-04-22
FR2680908A1 (fr) 1993-03-05
GB9216801D0 (en) 1992-09-23
GB2259405A (en) 1993-03-10

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