IT1261716B - ONLY MASK READING MEMORY TO DATA PROGRAMMING AFTER FORMATION OF THE BIT LINES. - Google Patents

ONLY MASK READING MEMORY TO DATA PROGRAMMING AFTER FORMATION OF THE BIT LINES.

Info

Publication number
IT1261716B
IT1261716B ITMI921962A ITMI921962A IT1261716B IT 1261716 B IT1261716 B IT 1261716B IT MI921962 A ITMI921962 A IT MI921962A IT MI921962 A ITMI921962 A IT MI921962A IT 1261716 B IT1261716 B IT 1261716B
Authority
IT
Italy
Prior art keywords
region
formation
bit lines
word line
extending
Prior art date
Application number
ITMI921962A
Other languages
Italian (it)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921962A0 publication Critical patent/ITMI921962A0/en
Publication of ITMI921962A1 publication Critical patent/ITMI921962A1/en
Application granted granted Critical
Publication of IT1261716B publication Critical patent/IT1261716B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Abstract

Memoria di sola lettura a maschera (ROM maschera) in un dispositivo di memoria a semiconduttore con una regione di diffusione di un dato tipo di conduttività estendentesi in una prima direzione e separata da un'altra mediante una regione isolante, ed una linea di parole estendentesi in una seconda direzione perpendicolare alla prima direzione e parallela ad un'altra linea di parole, ed una linea di bit estendentesi nella prima direzione entro una regione formata su una disposizione delle linee di parole e corrispondente alla regione isolante tra le regioni di diffusione, e contattante la linea delle parole attraverso una data regione di contatto. Pertanto, poiché la linea di bit è separata dalla regione di diffusione di un dato intervallo, il tempo di elaborazione o "turn around time (TAT)" può essere grandemente ridotto.Mask read-only memory (mask ROM) in a semiconductor memory device with a diffusion region of a given type of conductivity extending in a first direction and separated from another by an insulating region, and a line of words extending in a second direction perpendicular to the first direction and parallel to another word line, and a bit line extending in the first direction within a region formed on a word line arrangement and corresponding to the insulating region between the diffusion regions, and contacting the word line through a given contact region. Therefore, since the bit line is separated from the diffusion region of a given interval, the processing time or "turn around time (TAT)" can be greatly reduced.

ITMI921962A 1991-09-04 1992-08-07 ONLY MASK READING MEMORY TO DATA PROGRAMMING AFTER FORMATION OF THE BIT LINES. IT1261716B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (en) 1991-09-04 1991-09-04 Mask read only memory

Publications (3)

Publication Number Publication Date
ITMI921962A0 ITMI921962A0 (en) 1992-08-07
ITMI921962A1 ITMI921962A1 (en) 1993-03-05
IT1261716B true IT1261716B (en) 1996-05-30

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921962A IT1261716B (en) 1991-09-04 1992-08-07 ONLY MASK READING MEMORY TO DATA PROGRAMMING AFTER FORMATION OF THE BIT LINES.

Country Status (7)

Country Link
KR (1) KR940004609B1 (en)
CN (1) CN1070279A (en)
DE (1) DE4226421A1 (en)
FR (1) FR2680908A1 (en)
GB (1) GB2259405A (en)
IT (1) IT1261716B (en)
TW (1) TW222341B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (en) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd DEAD MEMORY WITH NAND TYPE MASK.
KR100446603B1 (en) * 1997-12-12 2004-11-03 삼성전자주식회사 Ferroelectric liquid crystal compound for increasing response rate of liquid crystal display device, liquid crystal composition comprising the same and liquid crystal display device using the same
DE10254155B4 (en) 2002-11-20 2010-12-09 Infineon Technologies Ag Mask-programmable ROM device
CN100343920C (en) * 2004-07-14 2007-10-17 义隆电子股份有限公司 Plane unit ROM for character line metal lead technology
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (en) * 1986-07-23 1988-02-08 Hitachi Ltd Vertical type read only memory
IT1217403B (en) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics TABLECLOTH MEMORY MATRIX WITH STAGGERED EPROM CELLS

Also Published As

Publication number Publication date
CN1070279A (en) 1993-03-24
ITMI921962A1 (en) 1993-03-05
KR940004609B1 (en) 1994-05-25
DE4226421A1 (en) 1993-03-18
TW222341B (en) 1994-04-11
ITMI921962A0 (en) 1992-08-07
KR930006951A (en) 1993-04-22
FR2680908A1 (en) 1993-03-05
GB9216801D0 (en) 1992-09-23
GB2259405A (en) 1993-03-10

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