GB2283128B - Memory device - Google Patents

Memory device

Info

Publication number
GB2283128B
GB2283128B GB9321694A GB9321694A GB2283128B GB 2283128 B GB2283128 B GB 2283128B GB 9321694 A GB9321694 A GB 9321694A GB 9321694 A GB9321694 A GB 9321694A GB 2283128 B GB2283128 B GB 2283128B
Authority
GB
United Kingdom
Prior art keywords
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9321694A
Other versions
GB9321694D0 (en
GB2283128A (en
Inventor
Bruce Alphenaar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Priority to GB9321694A priority Critical patent/GB2283128B/en
Publication of GB9321694D0 publication Critical patent/GB9321694D0/en
Publication of GB2283128A publication Critical patent/GB2283128A/en
Application granted granted Critical
Publication of GB2283128B publication Critical patent/GB2283128B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H01L29/803—Programmable transistors, e.g. with charge-trapping quantum well
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
GB9321694A 1993-10-21 1993-10-21 Memory device Expired - Fee Related GB2283128B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9321694A GB2283128B (en) 1993-10-21 1993-10-21 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9321694A GB2283128B (en) 1993-10-21 1993-10-21 Memory device

Publications (3)

Publication Number Publication Date
GB9321694D0 GB9321694D0 (en) 1993-12-15
GB2283128A GB2283128A (en) 1995-04-26
GB2283128B true GB2283128B (en) 1997-08-20

Family

ID=10743885

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9321694A Expired - Fee Related GB2283128B (en) 1993-10-21 1993-10-21 Memory device

Country Status (1)

Country Link
GB (1) GB2283128B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2306769B (en) * 1995-10-16 1997-09-17 Toshiba Cambridge Res Center Radiation detector
JPH10189779A (en) * 1996-12-27 1998-07-21 Sanyo Electric Co Ltd Semiconductor device and fabrication thereof
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
US6720589B1 (en) 1998-09-16 2004-04-13 Kabushiki Kaisha Toshiba Semiconductor device
GB2353635B (en) * 1999-07-10 2002-03-20 Toshiba Res Europ Ltd Optical device
EP2955152B1 (en) * 2010-12-28 2020-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Information storage device, optical information carrier, device for storing information in an information storage device, use of an information storage device as passive display and sensor assembly

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256313A (en) * 1991-01-04 1992-12-02 Hitachi Europ Ltd Semiconductor dot logic/memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256313A (en) * 1991-01-04 1992-12-02 Hitachi Europ Ltd Semiconductor dot logic/memory device

Also Published As

Publication number Publication date
GB9321694D0 (en) 1993-12-15
GB2283128A (en) 1995-04-26

Similar Documents

Publication Publication Date Title
HU9400059D0 (en) Cifting device
GB9307572D0 (en) Transintimal recanalisation device
ZA945248B (en) Retaining device
GB9605873D0 (en) Memory device
KR0132636B1 (en) Memory device
GB9417264D0 (en) Memory device
GB9421138D0 (en) Memory device
GB9226382D0 (en) Memory device
GB9417271D0 (en) Memory device
GB9303220D0 (en) Device
GB2283128B (en) Memory device
EP0654790A3 (en) Memory device.
GB9325100D0 (en) Device
GB9414760D0 (en) Can-feeding device
EP0575969A3 (en) Memory device.
EP0569858A3 (en) Memory device.
KR100245959B1 (en) External memory device
GB9407301D0 (en) Flower-standing device
GB9325750D0 (en) Device
TW299859U (en) Memory device
AU664249B2 (en) Memory device
GB9320555D0 (en) Memory aid
GB9313706D0 (en) Access device
GB9120709D0 (en) Memory device
GB9312146D0 (en) Storage device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20061021