GB2353635B - Optical device - Google Patents
Optical deviceInfo
- Publication number
- GB2353635B GB2353635B GB9916184A GB9916184A GB2353635B GB 2353635 B GB2353635 B GB 2353635B GB 9916184 A GB9916184 A GB 9916184A GB 9916184 A GB9916184 A GB 9916184A GB 2353635 B GB2353635 B GB 2353635B
- Authority
- GB
- United Kingdom
- Prior art keywords
- optical device
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916184A GB2353635B (en) | 1999-07-10 | 1999-07-10 | Optical device |
US09/396,438 US6720589B1 (en) | 1998-09-16 | 1999-09-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916184A GB2353635B (en) | 1999-07-10 | 1999-07-10 | Optical device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9916184D0 GB9916184D0 (en) | 1999-09-08 |
GB2353635A GB2353635A (en) | 2001-02-28 |
GB2353635B true GB2353635B (en) | 2002-03-20 |
Family
ID=10857004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9916184A Expired - Lifetime GB2353635B (en) | 1998-09-16 | 1999-07-10 | Optical device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2353635B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2365210B (en) * | 2000-07-28 | 2003-01-22 | Toshiba Res Europ Ltd | An optical device and a method of making an optical device |
JP3987519B2 (en) * | 2004-09-30 | 2007-10-10 | 株式会社東芝 | Refractive index changing device and refractive index changing method |
ES2297972A1 (en) * | 2005-05-30 | 2008-05-01 | Universidad Politecnica De Madrid | Quantum dot intermediate band infrared photodetector |
GB2439595B (en) * | 2006-06-28 | 2008-11-05 | Toshiba Res Europ Ltd | A quantum memory device |
CN100589012C (en) * | 2007-10-17 | 2010-02-10 | 中国科学院半导体研究所 | Active region structure of quanta point light modulator |
GB2480265B (en) * | 2010-05-10 | 2013-10-02 | Toshiba Res Europ Ltd | A semiconductor device and a method of fabricating a semiconductor device |
WO2022256867A1 (en) * | 2021-06-08 | 2022-12-15 | University Of South Australia | Improvements in optical data storage |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2283128A (en) * | 1993-10-21 | 1995-04-26 | Hitachi Europ Ltd | A memory device incorporating a quantum dot array |
US5440148A (en) * | 1993-04-16 | 1995-08-08 | Sony Corporation | Quantum operational device |
JPH09179237A (en) * | 1995-12-26 | 1997-07-11 | Fujitsu Ltd | Optical memory element |
US5663571A (en) * | 1994-04-21 | 1997-09-02 | Sony Corporation | Quantum memory |
-
1999
- 1999-07-10 GB GB9916184A patent/GB2353635B/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5440148A (en) * | 1993-04-16 | 1995-08-08 | Sony Corporation | Quantum operational device |
GB2283128A (en) * | 1993-10-21 | 1995-04-26 | Hitachi Europ Ltd | A memory device incorporating a quantum dot array |
US5663571A (en) * | 1994-04-21 | 1997-09-02 | Sony Corporation | Quantum memory |
JPH09179237A (en) * | 1995-12-26 | 1997-07-11 | Fujitsu Ltd | Optical memory element |
Also Published As
Publication number | Publication date |
---|---|
GB9916184D0 (en) | 1999-09-08 |
GB2353635A (en) | 2001-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20190709 |