CN1070279A - 掩膜只读存储器 - Google Patents

掩膜只读存储器 Download PDF

Info

Publication number
CN1070279A
CN1070279A CN92109280A CN92109280A CN1070279A CN 1070279 A CN1070279 A CN 1070279A CN 92109280 A CN92109280 A CN 92109280A CN 92109280 A CN92109280 A CN 92109280A CN 1070279 A CN1070279 A CN 1070279A
Authority
CN
China
Prior art keywords
diffusion region
word line
bit line
mask rom
isolated area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN92109280A
Other languages
English (en)
Chinese (zh)
Inventor
赵星熙
李炯坤
崔正达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1070279A publication Critical patent/CN1070279A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
CN92109280A 1991-09-04 1992-08-10 掩膜只读存储器 Pending CN1070279A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR15427/91 1991-09-04
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (1)

Publication Number Publication Date
CN1070279A true CN1070279A (zh) 1993-03-24

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92109280A Pending CN1070279A (zh) 1991-09-04 1992-08-10 掩膜只读存储器

Country Status (7)

Country Link
KR (1) KR940004609B1 (ja)
CN (1) CN1070279A (ja)
DE (1) DE4226421A1 (ja)
FR (1) FR2680908A1 (ja)
GB (1) GB2259405A (ja)
IT (1) IT1261716B (ja)
TW (1) TW222341B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
DE10254155B4 (de) * 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型ｒｏｍ
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器

Also Published As

Publication number Publication date
ITMI921962A1 (it) 1993-03-05
ITMI921962A0 (it) 1992-08-07
IT1261716B (it) 1996-05-30
DE4226421A1 (de) 1993-03-18
FR2680908A1 (fr) 1993-03-05
GB2259405A (en) 1993-03-10
KR930006951A (ko) 1993-04-22
KR940004609B1 (ko) 1994-05-25
TW222341B (ja) 1994-04-11
GB9216801D0 (en) 1992-09-23

Similar Documents

Publication Publication Date Title
US6521960B2 (en) Column transistor for semiconductor devices
KR860002154A (ko) 반도체 집적 회로 장치 및 그 제조 방법
EP0317136A3 (en) A method of producing a semiconductor integrated circuit device
CN86101209A (zh) 半导体器件
EP0593247A2 (en) Semiconductor memory device and manufacturing method therefor
KR880005686A (ko) 반도체 기억장치 및 그의 제조 방법
US4868626A (en) Semiconductor device
CN1070279A (zh) 掩膜只读存储器
US6445041B1 (en) Semiconductor memory cell array with reduced parasitic capacitance between word lines and bit lines
KR920010848B1 (ko) 반도체기억장치
JP2001274336A (ja) 半導体装置
US4570175A (en) Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
US4974042A (en) Semiconductor memory device with compact ROM memory cells
ATE183335T1 (de) Halbleiteranordnung mit selbstjustierten kontakten und verfahren zu ihrer herstellung
US4835590A (en) Semiconductor memory device using junction short type programmable element
KR100520190B1 (ko) 메모리 셀 어레이
JPH02106966A (ja) 半導体記憶装置
JPS623584B2 (ja)
JP2617920B2 (ja) スタンダードセルのレイアウト方法
KR960003658B1 (ko) Nand형 메모리 장치 및 그 제조방법
JPH0364068A (ja) 半導体記憶装置およびその製造方法
JPH02280353A (ja) 半導体集積回路
JP3106688B2 (ja) スタンダードセルのレイアウト方法
JPH06196661A (ja) 拡散層書換え方式のｎｏｒ−ｘ型マスクｒｏｍ
JPH0736425B2 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication